The femtosecond laser-modified region in isot, ropic glass medium shows a big optical birefringence. Transmission of the birefringent regions between two crossed polarizers depends on phase retardation and the orienta...The femtosecond laser-modified region in isot, ropic glass medium shows a big optical birefringence. Transmission of the birefringent regions between two crossed polarizers depends on phase retardation and the orientation angle of the birefringent optical axes. Based on this effect, three-dimensional （3D） multilevel memory was proposed and demonstrated for nonvolatile memory up to eight levels, in contrast to the standard two-level technology. Eight-level writing and reading are distinguishable in fused silica with a near-infrared femtasecond laser. The retention of this memorv is characterized for nonvolatile annlications.展开更多
We prepare Si x （ZrO 2 ） 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. T...We prepare Si x （ZrO 2 ） 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter ana- lyzer, respectively. With the proper Si-doped Si x （ZrO 2） 100 x interlayer, the Al/ Si x （ZrO 2 ） 100 x /Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.展开更多
基金This work was supported by the Innovation Founda-tion of Chinese Academy of Sciences (No. 40001043)
文摘The femtosecond laser-modified region in isot, ropic glass medium shows a big optical birefringence. Transmission of the birefringent regions between two crossed polarizers depends on phase retardation and the orientation angle of the birefringent optical axes. Based on this effect, three-dimensional （3D） multilevel memory was proposed and demonstrated for nonvolatile memory up to eight levels, in contrast to the standard two-level technology. Eight-level writing and reading are distinguishable in fused silica with a near-infrared femtasecond laser. The retention of this memorv is characterized for nonvolatile annlications.
基金supported by the National Nature Science Foundation of China (No. 60578047)the National "973" Program of China (Nos. 2009CB929201 and No.2010CB933703)
文摘We prepare Si x （ZrO 2 ） 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter ana- lyzer, respectively. With the proper Si-doped Si x （ZrO 2） 100 x interlayer, the Al/ Si x （ZrO 2 ） 100 x /Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.
