Based on Langmuir equation and thermodynamic properties of iron-silicon binary alloy, a mathematical model about the process of electron-beam evaporated binary alloy Fe-6.5%Si was established. Variation of the composi...Based on Langmuir equation and thermodynamic properties of iron-silicon binary alloy, a mathematical model about the process of electron-beam evaporated binary alloy Fe-6.5%Si was established. Variation of the composition of molten pool, vapor and deposit with time, length of transient time and the composition of molten pool, deposit under the steady condition were presented according to the numerical model. The experimental results on the composition of deposit were compared to the data calculated through the model. The results show that the model is applicable, after evaporating for about 50min, the compositions of the deposit are equal to those of the ingot.展开更多
The modified microstructure of Al-Si-Pb alloys irradiated by high current electron beam (HCPEB) reveals three distinct regions: a molten zone, an overlapped zone of heat-affected and quasistatic thermal stress-affecte...The modified microstructure of Al-Si-Pb alloys irradiated by high current electron beam (HCPEB) reveals three distinct regions: a molten zone, an overlapped zone of heat-affected and quasistatic thermal stress-affected zone, and a transition zone followed by the substrate. The hardness and wear properties of the alloys were significantly improved. To better understand these changes in microstructure and properties, the physical model for the simulation of temperature and quasistatic stress fields was established. Based on experimental investigation and physical models, the temperature field and stress field were simulated for Al-Si-Pb alloy. The starting melting position, largest crater depth, melting layer thickness, and quasistatic stress distribution were obtained. These results reveal the mechanism of crater formation on the surface and improvement of hardness and wear resistance.展开更多
The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithi...The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures.In particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,i.e.GaAs(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been considered.The J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic parameters.An analysis of the tunnel-junction behaviour has been also developed.The mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral conditions.External quantum efficiency simulations have evaluated the useful wavelength range.The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction.展开更多
It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this s...It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of~180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from~300 nm to~600 nm with decrease in the scanning speed,or even to over 1μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polarization sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.展开更多
文摘Based on Langmuir equation and thermodynamic properties of iron-silicon binary alloy, a mathematical model about the process of electron-beam evaporated binary alloy Fe-6.5%Si was established. Variation of the composition of molten pool, vapor and deposit with time, length of transient time and the composition of molten pool, deposit under the steady condition were presented according to the numerical model. The experimental results on the composition of deposit were compared to the data calculated through the model. The results show that the model is applicable, after evaporating for about 50min, the compositions of the deposit are equal to those of the ingot.
基金Project(50375063) supported by the National Natural Science Foundation of China
文摘The modified microstructure of Al-Si-Pb alloys irradiated by high current electron beam (HCPEB) reveals three distinct regions: a molten zone, an overlapped zone of heat-affected and quasistatic thermal stress-affected zone, and a transition zone followed by the substrate. The hardness and wear properties of the alloys were significantly improved. To better understand these changes in microstructure and properties, the physical model for the simulation of temperature and quasistatic stress fields was established. Based on experimental investigation and physical models, the temperature field and stress field were simulated for Al-Si-Pb alloy. The starting melting position, largest crater depth, melting layer thickness, and quasistatic stress distribution were obtained. These results reveal the mechanism of crater formation on the surface and improvement of hardness and wear resistance.
文摘The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures.In particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,i.e.GaAs(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been considered.The J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic parameters.An analysis of the tunnel-junction behaviour has been also developed.The mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral conditions.External quantum efficiency simulations have evaluated the useful wavelength range.The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction.
基金Project supported by the Natural Science Foundation of Guangdong Province (Grant No.2021A1515012335)the National Natural Science Foundation of China (Grant No.11274400)+2 种基金Pearl River S&T Nova Program of Guangzhou (Grant No.201506010059)State Key Laboratory of High Field Laser Physics (Shanghai Institute of Optics and Fine Mechanics)State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)。
文摘It is well known that femtosecond laser pulses can easily spontaneously induce deep-subwavelength periodic surface structures on transparent dielectrics but not on non-transparent semiconductors.Nevertheless,in this study,we demonstrate that using high-numerical-aperture 800 nm femtosecond laser direct writing with controlled pulse energy and scanning speed in the near-damage-threshold regime,polarization-dependent deep-subwavelength single grooves with linewidths of~180 nm can be controllably prepared on Si.Generally,the single-groove linewidth increases slightly with increase in the pulse energy and decrease in the scanning speed,whereas the single-groove depth significantly increases from~300 nm to~600 nm with decrease in the scanning speed,or even to over 1μm with multi-processing,indicating the characteristics of transverse clamping and longitudinal growth of such deep-subwavelength single grooves.Energy dispersive spectroscopy composition analysis of the near-groove region confirms that single-groove formation tends to be an ultrafast,non-thermal ablation process,and the oxidized deposits near the grooves are easy to clean up.Furthermore,the results,showing both the strong dependence of groove orientation on laser polarization and the occurrence of double-groove structures due to the interference of pre-formed orthogonal grooves,indicate that the extraordinary field enhancement of strong polarization sensitivity in the deep-subwavelength groove plays an important role in single-groove growth with high stability and collimation.
