The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the mai...The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.展开更多
文摘The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.
