Ultraconformable Integrated Wireless Charging Micro-Supercapacitor Skin

Conformable and wire-less charging energy storage devices play important roles in enabling the fast development of wearable,non-contact soft electronics.However,current wire-less charging power sources are still restricted by limited flexural angles and fragile connection of components,resulting in the failure expression of performance and constraining their fur-ther applications in health monitoring wearables and moveable artificial limbs.Herein,we present an ultracompatible skin-like integrated wireless charging micro-supercapacitor,which building blocks(including electrolyte,electrode and substrate)are all evaporated by liquid precursor.Owing to the infiltration and permeation of the liquid,each part of the integrated device attached firmly with each other,forming a compact and all-in-one configuration.In addition,benefitting from the controllable volume of electrode solution precursor,the electrode thickness is easily regulated varying from 11.7 to 112.5μm.This prepared thin IWC-MSC skin can fit well with curving human body,and could be wireless charged to store electricity into high capacitive micro-supercapacitors(11.39 F cm-3)of the integrated device.We believe this work will shed light on the construction of skin-attachable electronics and irregular sensing microrobots.

Noise analysis and measurement of time delay and integration charge coupled device

Time delay and integration （TDI） charge coupled device （CCD） noise sets a fundamental limit on image sensor performance, especially under low illumination in remote sensing applications. After introducing the complete sources of CCD noise, we study the effects of TDI operation mode on noise, and the relationship between different types of noise and number of the TDI stage. Then we propose a new technique to identify and measure sources of TDI CCD noise employing mathematical statistics theory, where theoretical analysis shows that noise estimated formulation converges well. Finally, we establish a testing platform to carry out experiments, and a standard TDI CCD is calibrated by using the proposed method. The experimental results show that the noise analysis and measurement methods presented in this paper are useful for modeling TDI CCDs.

Charge Couple Device-Based Systemfor3-di mensional Real Ti me Positioning on the Assessment of Segmental Range of Motion of Lumbar Spine

Objective： To observe the tested results of the segmental range of motion （ROM） of lumbar spine by charge couple device （CCD）-based system for 3-dimensional real-time positioning （CCD system）, and to analyze its clinical significance. Methods： Seven patients with lumbar joint dysfunction and 8 healthy subjects were tested twice by the CCD-based system with an interval of 10 min. Results： The ROM of the patients was obviously lesser than that of the healthy subjects. The measuring data of segmental ROM of lumbar spine by CCD system is correlated significantly to the same data checked later on the same subjects in every direction of the movements. The differences between two checks are usually less than 1 degree. Conclusion： Specially designed CCD based system for 3-dimensional real-time positioning could objectively reflect the segmental ROM of lumbar spine. The system would be of great clinical significance in the assessment of the biomechanical dysfunction of lumbar spine and the effect of the treatment applied.

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

A bright white quantum dot light-emitting device （white-QLED） with 4-[4-（1-phenyl-lH-benzo[d]imidazol-2- yl）phenyl]-2- [3-（tri-phenylen-2-yl）phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2 @8 V with the Commission Internationale de l＇Eclairage （CIE） chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence （EL） spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

Phase transition and charge transport through a triple dot device beyond the Kondo regime

Semiconductor quantum dot structure provides a promising basis for quantum information processing, within which to reveal the quantum phase and charge transport is one of the most important issues. In this paper, by means of the numerical renormalization group technique, we study the quantum phase transition and the charge transport for a parallel triple dot device in the strongly correlated limit, focusing on the effect of inter-dot hopping t beyond the Kondo regime. We find the quantum behaviors depend closely on the initial electron number on the dots, and the present model may map to single,double, and side-coupled impurity models in different parameter spaces. An orbital spin-1/2 Kondo effect between the conduction leads and the bonding orbital, and several magnetic-frustration phases are demonstrated when t is adjusted to different regimes. To understand these phenomena, a canonical transformation of the energy levels is given, and important physical quantities with respect to increasing t and necessary theoretical discussions are shown.

Investigating the Thermal Stress of Millisecond Pulsed Laser Irradiation on Charge-Coupled Devices

In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation.

Surface contamination of the charge-coupled device

An experimental method to study the influence of surface contamination of a thinned, backside illuminated charge-coupled device(CCD) upon its quantum efficiency in soft X-ray region is suggested. A transmission grating spectrometer(TGS), in which the transmission grating is coupled to a thinned, backside illuminated charge coupled device, is used to measure the continuum X-ray emission from the end of cylindrical target irradiated by laser. In the measured spectra, only the carbon K absorption edge at wavelength of 4.4 um due to condensation of the vacuum oil oil the CCD surface is clearly seen. The surface contamination is considered as an effective "carbon filter" and the filter absorption to correct the quantum efficiency of the CCD camera is taken into account. The effective thickness of the carbon filter is determined by comparing the jump height of the measured spectra at 4.4um with those of the carbon absorption coefficient curves obtained from various carbon thickness. The accuracy of this method is tested by comparing the X-ray spectrum measured by the TGS with that obtained by a soft X-ray spectrometer.

Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials

With a large number of researches being conducted on two?dimen?sional(2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high?quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of di erent types of 2D heterostruc?tures, followed by the discussions on present challenges and perspectives of further investigations.

Electrical bistable devices using composites of zinc sulfide nanoparticles and poly-(N-vinylcarbazole)

N-dodecanethiol capped zinc sulfide（Zn S） nanocrystals were synthesized by the one-pot approach and blended with poly（N-vinylcarbazole）（PVK） to fabricate electrical bistable devices. The corresponding devices did exhibit electrical bistability and negative differential resistance（NDR） effects. A large ON/OFF current ratio of 104 at negative voltages was obtained by applying different amplitudes of sweeping voltage. The observed conductance switching and the negative differential resistance are attributed to the electric-field-induced charge transfer between the nanocrystals and the polymer,and the charge trapping/detrapping in the nanocrystals.

Electrochemical Proton Storage:From Fundamental Understanding to Materials to Devices

Simultaneously improving the energy density and power density of electrochemical energy storage systems is the ultimate goal of electrochemical energy storage technology.An effective strategy to achieve this goal is to take advantage of the high capacity and rapid kinetics of electrochemical proton storage to break through the power limit of batteries and the energy limit of capacitors.This article aims to review the research progress on the physicochemical properties,electrochemical performance,and reaction mechanisms of electrode materials for electrochemical proton storage.According to the different charge storage mechanisms,the surface redox,intercalation,and conversion materials are classified and introduced in detail,where the influence of crystal water and other nanostructures on the migration kinetics of protons is clarified.Several reported advanced full cell devices are summarized to promote the commercialization of electrochemical proton storage.Finally,this review provides a framework for research directions of charge storage mechanism,basic principles of material structure design,construction strategies of full cell device,and goals of practical application for electrochemical proton storage.

MODELS AND MECHANISM OF OPTO-ELECTRONIC MOLECULAR DEVICES

Opto-electronic molecular devices could be classified into three kinds.Theelementary structures of them are presented in this paper.It is pointed out that the elemen-tary excitation theory on charge transfer system can be employed to analyze several impor-tant physical processes in opto-electronic molecular devices.Some basic principles on thedevice design are obtained.The method developed by authors has succeeded in analyzingthe conducting mechanism and switching property of Metal-TCNQ.The crystal structureof Cu-TCNQ and the explanation to the electronic switching effect of Cu-TCNQ are giv-en out first time.

Experimental Research of ZnO Surface Flashover Trigger Device of Pseudo-Spark Switch

Pseudo-spark switch（PSS） is one of the most widely used discharge switches for pulse power technology.It has many special characteristics such as reliability in a wide voltage range,small delay time,as well as small delay jitter.In this paper,the measuring method for the initial plasma of ZnO surface flashover triggering device of PSS is studied and the results of the measurement show that the electron emission charge is mainly influenced by trigger voltage,gas pressure and DC bias voltage.When the bias voltage increases from 2 kV to 6 kV with the gap distancc fixed at 3 mm,the electron emission charge changes from 2 μC to about 6μC.When the gap distance changes from 3 mm to 5 mm with the bias voltage fixed at 2 kV,the electron emission charge increases from 1.5 μC to 2.5μC.When the gap distance is 4 mm,the hold-off voltage of PSS is 45 kV at gas pressure of 2 Pa,the minimum operating voltage is less than 1 kV.So,the operating scope is from 2.22%to 99%of its self-breakdown voltage.The discharging delay time decreases from 450 ns to 150 ns when the trigger pulse voltage is 1 kV and the discharging voltage is changed from 1 kV to 12 kV.When the trigger pulse voltage is 6 kV,the discharging delay time is less than 100 ns and changes from 100 ns to 50 ns,and the delay jitters are less than30 ns.

Total ionizing dose effect in an input/output device for flash memory

Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

Effectiveness of Lightning Protection Devices

In addition to the conventional Franklin Rod,many non-conventional air terminals are being used as lightning protection devices.As cited in previous works,these non-conventional devices emit space charge in the vicinity of the terminals during the process of lightning stroke.A number of factors affect the performance of these lightning protection devices,among them are geometry and dimension of the devices,location of the device above the ground,height of the cloud above the ground,and polarity of the lightning stroke.The performance of these lightning protection devices has been a topic of discussion by researchers for many years.Some studies focused on the magnitude of emission current from these devices as a criterion to evaluate their performances.The critical flashover voltage(CFO)between the devices and a metal screen simulating cloud can also be used as another criterion to evaluate the performance of the devices.Laboratory measurements were conducted in controlled conditions on different types of lightning protection devices to compare their performance.Four different types of devices were used in the present study:Franklin Rod,TerraStat models TS 100,TS 400,and Spline Ball Ionizer.The study focused on the CFO voltage of the air gap between devices and the metal screen.The CFO voltage was evaluated using standard switching and lightning impulses.The measurements were recorded for positive as well as negative polarity.The air gap between the devices and metal screen was selected at 2 m and 3 m.The results obtained provide a better understanding of the electrical performance of lightning protection devices.

Emission Current Characteristics of Triggered Device of Vacuum Switch

The characteristics of the triggered vacuum switch （TVS） are obviously influenced by the emission current ie and emission charge of the trigger device. In this paper, an RC charge collector is designed, and the characteristics of emission current ie and collecting charge Qc of the trigger device are studied. The experimental results indicate that the emission current ie which is produced by the initial plasma has both positive and negative components, and the polarity of the emission current ie depends mainly on the polarity of the bias voltage UBias. The emission current ie and collecting charge Qe increase with the increase of the trigger voltage Utr and the bias voltage UBias. The emission efficient r] increases linearly with the increase of the bias voltage UBias. When the gap distance is 15 mm and bias voltage UBias is 160 V and trigger voltage Utr is 2.6 kV, the emission efficiency r/reaches 6%

高压大功率SiC MOSFETs短路保护方法

碳化硅(SiC)MOSFETs短路承受能力弱,研究其短路保护方法成为保障电力电子设备安全运行的重要课题。现有方法大多围绕低压小功率SiC MOSFETs,然而随着电压和功率等级的提升,器件特性有所差异,直接套用以往设计难以实现高压大功率SiC MOSFETs的快速、可靠保护。该文首先详细研究了几种常用短路检测方法;其次基于高压大功率SiC MOSFETs器件特性,深入对比分析了不同短路检测方法的适用性,提出一种阻容式漏源极电压检测和栅极电荷检测相结合的短路保护方法;最后搭建了实验平台验证所提方法的可行性。结果表明,提出的方法在硬开关短路故障(hard switching fault,HSF)下,保护响应时间缩短了1.4μs,短路能量降低了62.5%;且能可靠识别负载短路故障(fault under load,FUL)。

带电器件模型静电放电等效仿真电路与计算分析

带电器件模型(CDM)静电放电描述的是器件自身出现静电感应带电进而形成静电放电冲击的过程,是航天器电子产品地面电装/装联过程中面临的主要静电放电风险之一。针对CDM静电放电开展等效电路模型研究与设计,对其充/放电原理及发生过程进行分析;对该等效电路模型进行理论、实验与仿真研究,考察各参数对静电放电波形特性的影响。比对验证表明,等效电路的放电波形与标准波形具有较高的一致性:CDM静电放电表现为上升沿为百ps量级、最大峰值电流为数A量级、正/负周期多次振荡的冲击信号;器件自身等效电容越大则冲击脉冲越强,通路电阻也会明显改变静电冲击波形样态。地面操作中应充分考虑CDM静电放电风险,采取措施降低静电放电对电路和器件可能造成的损伤。

基于线阵CCD的实验教学平台设计

在光电类课程的实验教学中,电荷耦合器件(CCD)是一个重要内容,传统的相关实验教学一般以演示性实验为主,导致学生对该器件的了解不够深入。该文提出一种适合各种线阵CCD的综合实验平台,采用该平台学生可以自主进行CCD驱动电路的设计实验、积分时间调节实验、角度测量实验和长度测量实验等。通过使用该平台,有助于提高学生的线阵CCD使用能力、单片机调试能力、基于LabVIEW的软件编程能力、电路板焊接能力和光路搭建能力。

下肢康复机器人联合IPC对脑损伤后肢体运动功能障碍患者下肢深静脉血栓预防效果

目的探讨下肢康复机器人联合间歇充气加压装置(IPC)对脑损伤后肢体运动功能障碍患者下肢深静脉血栓形成(DVT)的预防效果。方法通过便利抽样法选取本院2020年12月—2021年12月住院的脑损伤后肢体运动功能障碍患者90例,根据治疗方法的不同将其分为对照组和观察组,每组45例。对照组给予常规康复训练及IPC治疗,观察组在对照组基础上给予下肢康复机器人治疗,两组均在治疗3月后进行效果评价,比较两组临床疗效、美国国立卫生研究院卒中量表(NIHSS)评分、改良Barthel指数(MBI)评分、凝血-纤溶系统指标、下肢深静脉血流动力学参数、DVT发生率。结果观察组临床总有效率高于对照组(P<0.05)。观察组治疗后NIHSS评分低于对照组(P<0.05),观察组治疗后MBI评分高于对照组(P<0.05)。观察组治疗后D-二聚体(D-D)、纤维蛋白降解产物(FDP)均低于对照组,观察组治疗后凝血活酶时间(APTT)、凝血酶原时间(PT)均高于对照组(P<0.05)。观察组治疗后下肢腘静脉、股静脉、髂外静脉平均血流速度(Vm)均高于对照组(P<0.05)。观察组DVT发生率低于对照组(P<0.05)。结论下肢康复机器人联合IPC可有效改善脑损伤后肢体运动功能障碍患者神经功能及下肢血液流动速度,提高日常生活能力,纠正血液高凝状态,降低DVT发生率,值得借鉴。

纳米CMOS器件中热载流子产生缺陷局域分布的表征

本文针对纳米小尺寸CMOS器件,提出了一种根据表面势模型表征热载流子产生电荷陷阱和界面态局域分布的方法。热载流子注入(Hot Carrier Injectione,HCI)应力会在栅氧化层和Si/SiO_(2)界面中产生电荷陷阱和界面态,随着应力时间递增,这些缺陷的增多引起阈值电压等器件参数的漂移,在漏致势垒降低(Drain Induced Barrier Lowering,DIBL)效应下,可以选取表面势最大值处的阈值电压偏移量来表征沟道相应位置处HCI致电荷陷阱和界面态。研究发现,通过测量施加HCI应力前后器件阈值电压偏移量随源/漏极电压的分布,结合表面势模型计算出源/漏极电压随沟道表面势峰值的分布,可以得到HCI致电荷陷阱和界面态沿沟道的局域分布。利用此方法,精确地表征了在32 nm CMOS器件中HCI应力引起的电荷陷阱和界面态沿沟道的分布,并进一步分析了HCI效应的产生机理。