Understanding the correlation between energy-state mismatching and open-circuit voltage loss in bulk heterojunction solar cells

Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires energy-state matching between the donor and acceptor at the BHJ interfaces.Thus,both geometrically and energetically accessible delocalized state matching at the hot energy level is crucial for achieving efficient PICT.In this study,an effective method for quantifying the hot state matching of OPVs was developed.The degree of energy-state matching between the electron donor and acceptor at BHJ interfaces was quantified using a mismatching factor(MF)calculated from the modified optical density of the BHJ.Furthermore,the correlation between the open-circuit voltage(Voc)of the OPV device and energy-state matching at the BHJ interface was investigated using the calculated MF.The OPVs with small absolute MF values exhibited high Voc values.This result clearly indicates that the energy-state matching between the donor and acceptor is crucial for achieving a high Voc in OPVs.Because the MF indicates the degree of energy-state matching,which is a critical factor for suppressing energy loss,it can be used to estimate the Voc loss in OPVs.

A Comparative Study on Open Circuit Voltage Models for Lithium-ion Batteries

The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given.

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells

The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

Perovskite Self-Passivation with PCBM for Small Open-Circuit Voltage Loss

It is well known that [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (Jsc), fill factor (FF), open-circuit voltage (Voc) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH3NH3PbI3 (MAPbI3) precursor solution was 1 wt%, the device obtained the smallest Voc decay (less than 1%) in the p-i-n type PSCs with poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C60) as electron transport layer (ETL). The PSCs Voc stability improvement is attributed to enhanced crystallinity of photoactive layer and decreased non-radiative recombination by PCBM doping in the perovskites.

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

This manuscript presents a simple method for excess minority carriers’ lifetime measurement within the base region of p-n junction polycrystalline solar cell in transient mode. This work is an experimental transient 3-Dimensionnal study. The magnitude of the magnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell is illuminated by a stroboscopic flash with air mass 1.5 and under magnetic field in transient state. The experimental details are assumed in a figure. The procedure is outlined by the Open Circuit Voltage Decay analysis. Effective minority carrier life-time is calculated by fitting the linear zone of the transient voltage decay curve because linear decay is an ideal decay. The kaleidagraph software permits access to the slope of the curve which is inversely proportional to the lifetime. The external magnetic effects on minority carriers’ effective lifetime is then presented and analyzed. The analysis shows that the charge carrier’s effective lifetime decrease with the magnetic field increase.

Improvement of Open-Circuit Voltage in Organic Photovoltaic Cells with Chemically Modified Indium-Tin Oxide

The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.

The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field

It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.

Graphene quantum dots assisted photovoltage and efficiency enhancement in CdSe quantum dot sensitized solar cells

CdSe quantum dot sensitized solar cells （QDSCs） modified with graphene quantum dots （GQDs） have been successfully achieved in this work for the first time. Satisfactorily, the optimized photovoltage （Voc） of the modified QDSCs was approximately 0.04 V higher than that of plain CdSe QDSCs, consequently improving the photovoltaic performance of the resulting QDSCs. Served as a novel coating on the CdSe QD sensitized photoanode, GQDs played a vital role in improving Voc due to the suppressed charge recombination which has been confirmed by electron impedance spectroscopy as well as transient photovoltage decay measure- ments. Moreover, different adsorption sequences, concentration and deposition time of GQDs have also been systematically investigated to boost the power conversion efficiency （PCE） of CdSe QDSCs. After the coating of CdSe with GQDs, the resulting champion CdSe QDSCs exhibited an improved PCE of 6.59% under AM 1.5G full one sun illumination.

基于开口变压器法的交流电机定子非激励相绕组匝间短路检测研究

为了解决交流电机定子绕组中线圈绝缘损伤引起匝间短路故障无法准确、快速定位的问题,提出将检测转子绕组匝间短路的开口变压器法移植到检测交流电机定子绕组匝间短路,定子单相添加激励源,非激励相绕组设置故障点,开口变压器检测故障点所在槽,分析故障前后开口变压器绕组感应电动势的变化。首先阐述开口变压器检测定子非激励相的工作原理,分析正常和故障状态下通过开口变压器铁心漏磁通的表达式,进一步得到开口变压器绕组感应电动势表达式,获取故障变化规律。随后建立交流电机电磁仿真模型,进行仿真分析,最后用一台定子样机进行实验验证。结果表明:故障状态下,随着故障程度的加深,故障点所在槽的开口变压器感应电动势随之减小,证明了开口变压器可以作为离线检测交流电机定子非激励相绕组匝间短路故障的有效手段。

锂离子电池自放电K值检测系统设计

锂离子电池自放电检测对评估单体锂离子电池或电池组的容量、循环特性和使用寿命具有重要作用。快速检测开路状态下锂离子电池存储电量自发消耗是目前该领域的研究热点。采用开路电压法,通过测量单位时间内锂离子电池的电压降,即自放电K值,表征其自放电程度,设计了锂离子电池自放电K值检测系统。该系统由上、下位机组成,两者之间采用Type-C方式连接,可对锂离子电池进行自放电率检测。以三元锂离子电池为测试对象,对其进行14 d的静置实验,检测静置过程中的自放电K值。测试结果表明该系统不仅缩短了锂离子电池自放电检测时间,而且可准确检测锂离子电池的自放电率。在锂离子电池20%、40%、60%、80%、100%5种荷电状态,20、50、-20、-40℃4种温度条件下对锂离子电池进行自放电K值检测。依据K值测试结果,可分析荷电状态和自放电环境温度对锂离子电池自放电率的影响。

基于自然容错开关表的五相永磁同步电机直接转矩控制

五相永磁同步电机(permanent-magnetsynchronous motor,PMSM)传统直接转矩控制(direct torque control,DTC)存在相电流畸变严重、共模电压(common-modevoltage,CMV)高、转矩和磁链脉动大等问题,且无法实现相开路故障情况下的无扰运行。为解决上述问题,提出一种基于自然容错开关表的DTC策略。该策略根据PMSM开路故障前后基电压矢量的特点以及三次平面合成电压矢量为零的原则,构建虚拟矢量(virtual vector,VV),设计故障前后同一套自然容错开关表,进而不但抑制了故障导致的转矩脉动,而且在故障前后均能降低三次谐波电流、减小转矩和磁链脉动、抑制CMV。实验结果验证所提策略的可行性。

抗氧化小分子体掺杂对锡铅钙钛矿太阳电池性能的影响

锡铅钙钛矿中存在各种缺陷,且Sn^(2+)容易被氧化成Sn^(4+),从而导致太阳电池的转换效率和稳定性较差。研究发现4-香豆酸(p-C)的引入可显著改变薄膜的表面形貌、有效提高结晶性,且抑制Sn^(2+)的氧化,有利于提高钙钛矿层与传输层之间的能级匹配度。通过对钙钛矿光吸收层的缺陷进行钝化,可显著提升太阳电池的光电特性。最终,锡铅钙钛矿太阳电池的开路电压提升65mV,光电转换效率由18.14%提升至20.37%,并且电池稳定性得到显著提升。

基于OCV-SOC曲线簇的磷酸铁锂电池SOC估算研究

通过对3.2 V/72 Ah能量型磷酸铁锂电池进行充放电试验,研究不同充放电倍率下的开路电压(OCV)与荷电状态(SOC)的关系。根据磷酸铁锂电池在静置状态下的电压滞回特性,构建了不同静置时间下的OCV-SOC曲线簇,并利用傅里叶高阶拟合和差值法建立电池OCV-SOC不同静置时间下的校正数据表,该数据表将对提高电池管理系统SOC估算精度具有较强的可行性和实用性。

基于SOC-OCV曲线的卡尔曼滤波法SOC估计

由于开路电压(OCV)与电池荷电状态(SOC)存在一一对应的关系,OCV在电池SOC估计中被广泛运用。提出了如何通过卡尔曼滤波法(KMF)得到各种工作状态下PNGV电池模型中各状态量的值,从而得到PNGV电池模型的实时OCV,进而通过已经获得的SOC-OCV曲线得到电池SOC的预测值方法。给出了铅碳电池建模及参数辩识的方法及步骤,建立了参数随SOC可变的铅碳电池PNGV模型,并通过模型提出了用于OCV计算的KMF,该算法能快速并准确的收敛到真实的OCV,从而实时指示SOC,仿真和实验结果显示该方法具有较好的SOC估算效果及快速的动态响应。

实际使用工况的锂离子电池SOC-OCV关系

通过对电动汽车用锂离子电池荷电状态(SOC)与开路电压(OCV)的关系研究,发现其SOC与OCV有着良好的对应关系;同时,在电池实际使用工况(不同使用温度和不同使用寿命)条件下,通过温度修正系数和容量衰减因子的调整,S OC与OCV的关系仍能够始终保持一致。最后提出了基于电池等效电路模型的快速S OC-OCV关系估计方法,从而为开发基于OCV的实际使用工况下的电池管理控制策略提供了理论依据和数据支撑。

基于输出电压轨迹的三相逆变器开关管开路故障诊断

开关管开路故障会让功率变换器的输出电压与电流产生严重畸变,因而降低了变换器输出的电能质量。开路故障出现后其余功率开关器件的损耗可能增加,所以容易在电路中引发二次故障。文中提出一种针对三相逆变器开关管开路故障的故障诊断方法。故障类型与故障器件的辨识通过分析三相逆变器在αβ平面上的输出电压轨迹实现,仅需要测量滤波后的输出线电压。所提出的方法易于实现,可以诊断三相逆变器的所有开关管开路故障情况。最后,通过仿真和实验验证所提出方法的可行性和准确性。

基于动态灰色关联分析法的高压断路器机械故障诊断

高压断路器机械故障成因复杂,机械故障与分合闸线圈电流之间难以找到解析的映射关系。因此引入灰色关联分析法,建立一种高压断路器机械故障诊断模型,进一步通过计算参考数列与比较数列的距离来选择分辨系数,提出一种基于动态分辨系数的灰色关联分析法。该方法不需要大量样本数据,且算法精度不受信号干扰的影响。研究表明,选取铁心卡涩运动的时间参量相关度作为故障诊断特征量能有效诊断出高压断路器机械故障。

Modeling and Simulation of Heterojunction Solar Cell with Mono Crystalline Silicon

The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (Voc) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained VOC in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven layers for solar cell layout. By using this software, we can figure out the open circuit voltage (VOC), the short circuit current (JSC), the quantum efficiency (QE, %), the heterojunction energy band structure, and the power conversion efficiency (PCE).