We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory. We give a clear physical picture describ...We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory. We give a clear physical picture describing the photo-detachment of H- in this case. The electron flux distributions are calculated at various dielectric surfaces with unchanged magnetic field strength. It is found that the electron flux distributions of H- are very different in a magnetic field near different dielectric surfaces, namely the dielectric surface has a great influence on the photo-detachment interference pattern of the negative ion. Therefore, the interference pattern in the detached-electron flux distribution can be controlled by changing the dielectric constant. We hope that our studies may guide the future experimental research in photo-detachment microscopy.展开更多
The real time domain interferometry for the photodetachment dynamics driven by the oscillating electric field has been studied for the first time. Both the geometry of the detached electron trajectories and the electr...The real time domain interferometry for the photodetachment dynamics driven by the oscillating electric field has been studied for the first time. Both the geometry of the detached electron trajectories and the electron probability density are shown to be different from those in the photodetachment dynamics in a static electric field. The influence of the oscillating electric field on the detached electron leads to a surprisingly intricate shape of the electron waves, and multiple interfering trajectories generate complex interference patterns in the electron probability density. Using the semiclassical open-orbit theory, we calculate the interference patterns in the time-dependent electron probability density for different electric field strengths, different frequencies and phases in the oscillating electric field. This method is universal, and can be extended to study the photoionization dynamics of the atoms in the time-dependent electric field. Our study can guide the future experimental researches in the photodetachment or photoionization microscopy of negative ions and atoms in the oscillating electric field.展开更多
Using formulae for one- and two-electron integrals of Coulomb interaction potential fk (r) = r^-k with non-integer indices k established by one of the authors with the help of complete orthonormal sets of ψ^α-expo...Using formulae for one- and two-electron integrals of Coulomb interaction potential fk (r) = r^-k with non-integer indices k established by one of the authors with the help of complete orthonormal sets of ψ^α-exponential-type orbitals (α = 1, 0,-1,-2,…), we perform the calculations for isoelectronic series of the He atom containing nuclear charges from 2 to 10, where k = 1 - μ (-1 〈 μ 〈 0). For this purpose we have used the double-zeta approximation, the configuration interaction and coupled-cluster methods employing the integer-n Slater-type orbitals as basis sets. It is demonstrated that the results of calculations obtained are better than the numerical Hartree-Fock values.展开更多
基金Project supported by the Natural Science Foundation for Youths of Shandong Province,China(Grant No.ZR2014AQ022)
文摘We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory. We give a clear physical picture describing the photo-detachment of H- in this case. The electron flux distributions are calculated at various dielectric surfaces with unchanged magnetic field strength. It is found that the electron flux distributions of H- are very different in a magnetic field near different dielectric surfaces, namely the dielectric surface has a great influence on the photo-detachment interference pattern of the negative ion. Therefore, the interference pattern in the detached-electron flux distribution can be controlled by changing the dielectric constant. We hope that our studies may guide the future experimental research in photo-detachment microscopy.
基金Project supported by the National Natural Science Foundation of China(Grant No.11374133)the Taishan Scholars Project of Shandong Province,China(Grant No.ts2015110055)
文摘The real time domain interferometry for the photodetachment dynamics driven by the oscillating electric field has been studied for the first time. Both the geometry of the detached electron trajectories and the electron probability density are shown to be different from those in the photodetachment dynamics in a static electric field. The influence of the oscillating electric field on the detached electron leads to a surprisingly intricate shape of the electron waves, and multiple interfering trajectories generate complex interference patterns in the electron probability density. Using the semiclassical open-orbit theory, we calculate the interference patterns in the time-dependent electron probability density for different electric field strengths, different frequencies and phases in the oscillating electric field. This method is universal, and can be extended to study the photoionization dynamics of the atoms in the time-dependent electric field. Our study can guide the future experimental researches in the photodetachment or photoionization microscopy of negative ions and atoms in the oscillating electric field.
文摘Using formulae for one- and two-electron integrals of Coulomb interaction potential fk (r) = r^-k with non-integer indices k established by one of the authors with the help of complete orthonormal sets of ψ^α-exponential-type orbitals (α = 1, 0,-1,-2,…), we perform the calculations for isoelectronic series of the He atom containing nuclear charges from 2 to 10, where k = 1 - μ (-1 〈 μ 〈 0). For this purpose we have used the double-zeta approximation, the configuration interaction and coupled-cluster methods employing the integer-n Slater-type orbitals as basis sets. It is demonstrated that the results of calculations obtained are better than the numerical Hartree-Fock values.