A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP...A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2012CB933501the National Natural Science Foundation of China under Grant Nos 61307033,61274070,61137003 and 61321063
文摘A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.
