Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model

Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k·p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3 um lasers at room temperature because they can easily be used to obtain 1.3 um for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.

Temperature dependent direct-bandgap light emission and optical gain of Ge

Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.

Annealing behaviour of structure and morphology and its effects on the optical gain of Er^3＋/yb^3＋ co-doped Al2O3 planar waveguide amplifier

Using transmission electron microscopy （TEM） and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped A1203 films in the temperature range from 600℃-900℃. By comparison with TEM observation, the annealing behaviours of photoluminescence （PL） emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800℃ might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.

Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.

Study on optical gain of one-dimensional photonic crystals with active impurity

Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals. Numerical simulations demonstrate that the enhancement of stimulated radiation, as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap, are related to the negative imaginary part of the complex effective refractive index of doped layers. This means that the complex effective refractive index has a negative imaginary part, and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly. Therefore, the spontaneous emission can be enhanced, the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason, the group velocity close to the edges of band gap is verv small or abnormal.

ZTE Gains Second Largest Share of the Global Optical Networking Market in 2011

ZTE gained the second largest share of the global optical networking market of any company for the second year in a row. ZTE gained 1.8 share points on 2010. In two years, the company moved from world No. 5 to world No. 2 in the global optical network market, and its annual revenues now surpass $1.7 billion.

ZTE Gains Second Largest Share of the Global Optical Networking Market in 2011

22 August 2012 -- ZTE Corporation, a publicly listed global provider of telecommunications equipment and network solutions, announced its interim results for the six months ended 30 June 2012. Based on both HKFRS and PRC ASBE, ZTE recorded revenue of RMB 42.64 billion for the period, an increase of 15.2% year-on-year. Pre-tax profit in the period was RMB 656 million, a decrease of 48.5% year-on-year. Basic earnings per share for the period were RMB 0.07. During the reporting period,

Nonlinear Absorption and Low-threshold Two-photon Pumped Amplified Stimulated Emission from FAPbBr_(3) Nanocrystals

Formamidinium lead bromide(FAPbBr_(3))nanocrystals(NCs)have been considered to be a good optoelectronic material due to their pure green emission,excellent stability and superior carrier transport characteristics.However,two-photon pumped amplified spontaneous emission(ASE)and the corresponding nonlinear optical properties of FAPbBr_(3) NCs are scarcely revealed.Herein,we synthesized colloidal FAPbBr_(3) NCs with different sizes by changing the molar ratio of FABr/PbBr_(2) in the precursor solution,using ligand assisted precipitation(LARP)technology at room temperature.Photoluminescence(PL)and time resolved photoluminescence(TRPL)spectroscopy were measured to characterize their ASE properties.And their nonlinear optical properties were studied through the Zscan technique and the two-photon excited fluorescence method.The stimulated emission properties including oneand two-photon pumped ASE have been realized from FAPbBr_(3) NCs.With large two-photon absorption coefficient(0.27 cm/GW)and high non-linear absorption cross-section(7.52×10^(5) GM),ASE with threshold as low as 9.8μJ/cm^(2) and 487μJ/cm^(2) have been obtained from colloidal FAPbBr_(3) NCs using one-and two-photon excitations.These results indicate that as a new possible green-emitting frequency-upconversion material with low thresholds,FAPbBr_(3) NCs hold great potential in the development of high-performance two-photon pump lasers.

Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode

The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of a careful modelling analysis in a wide range of temperatures.The device’s optical gain is calculated by using two different band energy models.The first is based on the simple band-to-band model that accounts for carrier transitions between the first levels of the conduction band and valence band,whereas the second assumes the perturbation theory(k.p model)for considering the valence intersubband transitions and the relative absorption losses in the QW.The results reveal that the optical gain increases with increasing the n-type doping density as well as the Al molar fraction of the AlxGa1–xN layers,which originate the GaN compressivestrained QW.In particular,a significant optical gain on the order of 5000 cm^-1 is calculated for a QW width of 40A at room temperature.In addition,the laser threshold current density is of few tens of A/cm^2 at low temperatures.

Spatially Inhomogeneous Gain Modification in Photonic Crystals

The electric and magnetic energy distributions in photonic crystals （PC） are calculated by using the plane wave expansion （PWE） method. Even though the total electric and magnetic energy in each unit cell of photonic crystals are equal to each other, the ratio of electric and magnetic energy densities varies depending on the local position. Based on Fermi＇s golden rule, the optical gain is analysed in the full quantum framework that takes the nonuniform energy density ratio into account. This nonuniform energy density ratio in photonic crystals, defined in an equal form as gain modification factor, leads to spatially inhomogeneous modification of optical gain. Results reported in the paper provide a new perspective for analysing gain characteristics, as well as the lasing properties, in photonic crystals.

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors （DBRs）, the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.

Accurate Gain Flattening Filters Manufactured by Optical Compensation Monitoring Method

GFFs with less than 0.4 dB peak-to-peak error functions are routinely fabricated using commercially available coating machines by utilizing the natural error compensation mechanism of wavelength variable turning point optical monitoring method.

Improved all-optical OR logic gate based on combined Brillouin gain and loss in an optical fiber

Improved all-optical OR gates are proposed, using a novel fiber nonlinearity-based technique, based on the principles of combined Brillouin gain and loss in a polarization-maintaining fiber （PMF）. Switching contrasts are simulated to be between 82.4%-83.6%, for two respective configurations, and switching time is comparable to the phonon relaxation time in stimulated Brillouin scattering （SBS）.

Effects of gain nonlinearities in an optically injected gain lever semiconductor laser

The effects of gain compression on the modulation dynamics of an optically injected gain lever semiconductor laser are studied. Calculations reveal that the gain compression is not necessarily a drawback affecting the laser dynamics. With a practical injection strength, a high gain lever effect and a moderate compression value allow us to theoretically predict a modulation bandwidth four times higher than the free-running one without a gain lever,which is of paramount importance for the development of directly modulated broadband optical sources compatible with short-reach communication links.

Frequency up-conversion imaging with 60-dB gain using picosecond optical parametric amplifier

A weak infrared （IR） image amplifier with more than 60-dB optical gain and is developed from a picosecond （PS） 355-nm pumped gated optical parametric frequency up-conversion amplifier （OPA） in a/% BaB204 （BBO） crystal. The IR image at 1064 nm is amplified and up-converted into the visible region at 532 nm by parametric amplification and up-conversion. With the optimized optical gain, the lowest detectable energy of the image can be as low as 1.8 femto-Joule per pulse, which is three orders of magnitude lower than the detection limit of a charge-coupled device （CCD） camera. The transversal resolution of the OPA imaging is investigated, and the approaches for higher detection sensitivity and higher transversal resolution are proposed.

Device Length Dependency of Cross Gain Modulation and Cross Phase Modulation in Semiconductor Optical Amplifier

The cross gain modulation, the cross phase modulation and their recovery time in the SOAs with the various lengths were experimentally investigated. It was found that these values strongly depended on the device length.

Intense,wideband optical waveform generation by self-balanced amplification of fiber electro-optical sideband modulation

We demonstrate a simple method to obtain accurate optical waveforms with a gigahertz-level programmable modulation bandwidth and a watt-level output power for wideband optical control of free atoms and molecules.Arbitrary amplitude and phase modulations are transferred from microwave to light with a low-power fiber electro-optical modulator.The sub-milliwatt optical sideband is co-amplified with the optical carrier in a power-balanced fashion through a tapered semiconductor amplifier(TSA).By automatically keeping TSA near saturation in a quasi-continuous manner,typical noise channels associated with pulsed high-gain amplifications are efficiently suppressed.As an example application,we demonstrate interleaved cooling and trapping of two rubidium isotopes with coherent nanosecond pulses.

An Accurate and Safe Small Raman Gain Measurement for Installed Fiber Optic Cables

Novel small Raman gain measurement method for installed fiber optic cables using a modulated pump light is proposed. We have demonstrated accurate Raman gain measurement in small Raman gain less than 1dB and we also measured Raman gain for the installed fiber optic cable by using average pumping power of about only 25mW.

Perovskite quantum dot lasers

Owing to the excellent properties of perovskite quantum dots(QDs),such as an easy synthesis process,high photoluminescence quantum yields,high defect tolerance,and tunable bandgap with different elements,laser actions have been widely conducted.Over the past few years,several approaches have been used for successfully creating perovskite QD lasers.In this review,we summarize the progress of perovskite QD lasers from the aspects of laser theory,characteristics and applications of QD lasers,advantages of perovskite materials for lasers,factors influencing the QD laser threshold,two-photon pumped QD lasers,and perovskite QD laser stability.At the same time,aiming at existing problems,possible solutions and prospects are presented.

A study on fluorescence properties of Eu^(3+) ions in alkali lead tellurofluoroborate glasses

Glasses with chemical composition of (in mol.%): 26 RF-20 PbO-10 TeO2-43 H3BO3-1 EuO3 (RLTB) were prepared by conventional melt quenching method. The Judd-Ofelt intensity parameters Ω2 and Ω6 were obtained from the absorption intensities of 7F0→5D2 and 7F0→5L6 transitions, respectively. In order to overcome the problem of applicability of Judd-Ofelt analysis at room temperature due to the overlapping of the transitions originating from 7F0 and 7F1 levels of Eu3+ ion, the effect of the thermalization on the ...