Polar interface and surface optical vibration spectra in multi-layer wurtzite quantum wires： transfer matrix method

The polar interface optical （IO） and surface optical （SO） phonon modes and the corresponding Froehlich electron phonon-interaction Hamiltonian in a freestanding multi-layer wurtzite cylindrical quantum wire （QWR） are derived and studied by employing the transfer matrix method in the dielectric continuum approximation and Loudon＇s uniaxial crystal model. A numerical calculation of a freestanding wurtzite GaN/AlN QWR is performed. The results reveal that for a relatively large azimuthal quantum number m or wave-number kz in the free z-direction, there exist two branches of IO phonon modes localized at the interface, and only one branch of SO mode localized at the surface in the system. The degenerating behaviours of the IO and SO phonon modes in the wurtzite QWR have also been clearly observed for a small kz or m. The limiting frequency properties of the IO and SO modes for large kz and m have been explained reasonably from the mathematical and physical viewpoints. The calculations of electron-phonon coupling functions show that the high-frequency IO phonon branch and SO mode play a more important role in the electron phonon interaction.

Photoluminescence of a ZnO/GaN Heterostructure Interface

Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.

Numerical Studies of s-Polarized Surface Plasmon Polaritons at the Interface Associated with Metamaterial

The s-polarized surface plasmon polaritons （SPPs） at the interface between dielectric and metamaterial are studied, and the dispersion relations of SPPs are also presented. Using the prism coupling mechanism, we obtain the attenuated total reflection （ATR） spectra in the frequency regime based on the Otto configuration. It is found that the thickness of the dielectric in the configuration and the small damping of the metamaterial affect the coupling strength significantly without changing the coupling frequency. Furthermore, the optimized thickness of the dielectric decreases with a larger damping, and the coefficient F of the metamaterial also determines the coupling frequency and strength.

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

We report the enhancement of the light extraction of InGaN-based green light emitting diodes （LEDs） via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.

Photoinduced Reorientation Process and Nonlinear Optical Properties of Ag Nanoparticle Doped Azo Polymer Films

Azobenzene polymer films doped with and without Ag nanoparticles are prepared. The photoinduced reorientation process is investigated by using an Nd：YVO4 pump beam at 532 nm and a low semiconductor laser beam at 650 nm. The reorientation rate of azo polymer films is enhanced in the presence of Ag nanoparticles, and the rate of the azo polymer film with Ag concentration of 2.2 μg/ml is larger than that of the azo polymer films with Ag concentrations of 1.1 μg/ml and 4.4 μg/ml. The third-order nonlinear optical properties of the Ag/azo composite film are obtained by the Z-scan technique at a wavelength of 532 nm, and the measured nonlinear refractive index is 9.258×10-9 esu. It is shown that the main mechanisms involved in the large nonlinear optical responses come from the local field enhancement of Ag nanoparticles and the nonlinear effect of the azo polymer matrix.

Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10^-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200／times 200 ×μm^2 square mesa.

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition （MOCVD）. The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well （MQW）, respectively.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors （PDs） with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10^-6 A/cm^2 at 0 V bias and 2.24 × 10^-4 A/cm^2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 of 160 K at 20°C is obtained for 500？μm？long lasers. T0 is measured as high as 88 K in the temperature range of 15？75°C. Cavity length dependence of T0 is investigated.

Bending Loss Calculation of a Dielectric-Loaded Surface Plasmon Polariton Waveguide Structure

Based on full 3D finite element method simulations, the transmission of a dielectric-loaded surface plasmon polariton waveguide （DLSPPW） based 1/4 circle is calculated for a 90° bend model and a 270° bend model, respectively. It is found that the 270° bend model gives almost pure bending loss while the 90° bend model contains additional coupling loss. The models are applied to deduce the loss and unloaded quality factor of DLSPPW based waveguide ring resonators （WRRs） and the results of the 270° bend model agree well with direct simulating results of the WRRs. Thus the 270° bend model gives a fast and simple way to calculate bending loss and it is helpful for WRR design because no wavelength scan is needed.

Dual-Band Negative-Index Materials with Sandwich Configuration

Dual-band negative-index properties of the silver-SU-8-silver sandwich configuration, perforated with a square array of cross dipole apertures, are simulated and analyzed in the midinfrared region. The first and the second negative-index bands correspond to the （1,0） and （1,1） internal surface plasmon polariton （SPP） modes, respectively. The internal and external SPP modes acquired by the SPP dispersion relation of the metal/dielectric/metal model match well with the simulated transmission peaks. The effective parameters for the two negative-index bands are retrieved using simulated S parameters. The coupling effect between the （1,1） internal SPP mode and the localized resonance mode can be tuned by the arm length of cross dipole, which can weaken or destroy the negative electromagnetic response of the second negative-index band. The electric quadrupole mode of the second negative-index band accounts for its strong dependence on the dielectric loss of the interlayer.

Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes

We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.

Air Stability of Cs2CO3：Ag/Ag Cathode for Organic Light-Emitting Diodes

We report the superior stability of the composite Cs2CO3 ：Ag/Ag cathode structure, which can be used in efficient organic light-emitting diodes （OLEDs）. Devices with the Cs2CO3：Ag （1：10, 5nm）/Ag （95nm） cathode show a considerably improved lifetime compared with the control device with the Cs2CO3 （0.5 nm）/Ag （100 nm） cathode. The composite Cs2CO3 ：Ag/Ag film is proved to be stable in the atmosphere. X-ray diffraction （XRD） is applied to analyze the crystalline structure of the Cs2CO3：Ag film, and it is demonstrated that CsAg alloy is formed, leading to the improved stability of the thin film and the devices.

Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage

We present a density matrix approach for the theoretical description of an asymmetric double quantum dot （QD） system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.

Inverted Bottom-Emission Organic Light Emitting Diode Using Two n-Doped Layers for the Enhanced Performance

We fabricate an inverted bottom-emission organic light emitting diode （IBOLED） employing two n-doped layers, i.e., 5 nm lithium carbonate doped PTCDA （1：2 Li2CO3：PTCDA） with 5 nm Li2CO3 doped BCP （1：4 Li2CO3：BCP） on top, where PTCDA and BCP stand for 3, 4, 9, 10 perylenetetracarboxylic dianhydride and bathcuporine, respectively. Compared to the IBOED using a layer of 10 nm 1：4 Li2CO3：BCP, the one utilizing the two-layer combination of 5 nm 1：2 Li2CO3：PTCDA and 5 nm 1：4 Li2CO3：BCP shows decreasing operation voltage and thereby increasing power efficiency, mainly attributed to the higher electron conductivity of 1：2 Li2CO3：PTCDA than that of 1：4 Li2CO3：BCP. The mechanism of the electron transport through the interface of 1：2 Li2CO3：PTCDA and 1：4 Li2CO3：BCP is also discussed. We provide a simply and effective structure to enhance the current conduction for IBOLEDs.