Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures....Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.展开更多
Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enha...Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enhance the fluorescence properties.It was found that Sm3＋ and Tb3＋ had the best photoluminescence stimulated luminescence （PSL） effect among the selected trivalent rare-earth ions.All the SrS：Eu2＋ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS：Eu2＋.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61178059 and 61137002)the Key Program of the Science and Technology Commission of Shanghai Municipality,China(Grant No.11jc1413300)
文摘Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.
基金Project supported by the National Natural Science Foundations of China (20876002, 20976002)the Beijing Natural Science Foundation (2091002)Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality
文摘Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enhance the fluorescence properties.It was found that Sm3＋ and Tb3＋ had the best photoluminescence stimulated luminescence （PSL） effect among the selected trivalent rare-earth ions.All the SrS：Eu2＋ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS：Eu2＋.
