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Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties
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作者 MD REZWANUL HAQUE KHANDOKAR MASUDUZZAMAN BAKAUL +2 位作者 MD ASADUZZAMAN STAN SKAFIDAS THAS NIRMALATHAS 《Photonics Research》 SCIE EI 2017年第4期305-314,共10页
Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of t... Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of these active nanoscale waveguides are sensitive to the little changes in geometry, external injection/biasing, and doping profiles, and can be crucial in design and manufacturing processes. This paper brings the active silicon waveguide for complete characterization of various distinctive guiding parameters, including perturbation in real and imaginary refractive index, mode loss, group velocity dispersion, and bending loss, which can be instrumental in developing optimal design specifications for various application-centric active silicon waveguides. 展开更多
关键词 RI real Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties
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