Manufacturing of graphene based synaptic devices for optoelectronic applications

Neuromorphic computing systems can perform memory and computing tasks in parallel on artificial synaptic devices through simulating synaptic functions,which is promising for breaking the conventional von Neumann bottlenecks at hardware level.Artificial optoelectronic synapses enable the synergistic coupling between optical and electrical signals in synaptic modulation,which opens up an innovative path for effective neuromorphic systems.With the advantages of high mobility,optical transparency,ultrawideband tunability,and environmental stability,graphene has attracted tremendous interest for electronic and optoelectronic applications.Recent progress highlights the significance of implementing graphene into artificial synaptic devices.Herein,to better understand the potential of graphene-based synaptic devices,the fabrication technologies of graphene are first presented.Then,the roles of graphene in various synaptic devices are demonstrated.Furthermore,their typical optoelectronic applications in neuromorphic systems are reviewed.Finally,outlooks for development of synaptic devices based on graphene are proposed.This review will provide a comprehensive understanding of graphene fabrication technologies and graphene-based synaptic device for optoelectronic applications,also present an outlook for development of graphene-based synaptic device in future neuromorphic systems.

Band structure engineering in metal halide perovskite nanostructures for optoelectronic applications

Metal halide perovskite nanostructures have emerged as low-dimensional semiconductors of great significance in many fields such as photovoltaics,photonics,and optoelectronics.Extensive efforts on the controlled synthesis of perovskite nanostructures have been made towards potential device applications.The engineering of their band structures holds great promise in the rational tuning of the electronic and optical properties of perovskite nanostructures,which is one of the keys to achieving efficient and multifunctional optoelectronic devices.In this article,we summarize recent advances in band structure engineering of perovskite nanostructures.A survey of bandgap engineering of nanostructured perovskites is firstly presented from the aspects of dimensionality tailoring,compositional substitution,phase segregation and transition,as well as strain and pressure stimuli.The strategies of electronic doping are then reviewed,including defect-induced self-doping,inorganic or organic molecules-based chemical doping,and modification by metal ions or nanostructures.Based on the bandgap engineering and electronic doping,discussions on engineering energy band alignments in perovskite nanostructures are provided for building high-performance perovskite p-n junctions and heterostructures.At last,we provide our perspectives in engineering band structures of perovskite nanostructures towards future low-energy optoelectronics technologies.

Perovskite single crystals:physical properties and optoelectronic applications

Single crystal is the most advantageous of the crystalline states of halide perovskites.It displays better optical and electrical capabilities than polycrystalline films and microcrystals due to their inherent structural advantages,such as free grain boundaries,long-range ordered structure,and high orientation.Single-crystal perovskite materials can theoretically enable optoelectronic devices with higher performance and stronger stability.In this review,the intrinsic physical properties of perovskite single crystals are analyzed.The most recent advances in single-crystal optoelectronic devices are reviewed,and the design principles of the devices under different application conditions are revealed.It provides potential solutions for remaining challenges,and it is expected to accelerate the development of perovskite based optoelectronic devices.

Optical studies of semiconductor perovskite nanocrystals for classical optoelectronic applications and quantum information technologies: a review

Semiconductor perovskite films are now being widely investigated as light harvesters in solar cells with ever-increasing power conversion efficiencies,which have motivated the fabrication of other optoelectronic devices,such as light-emitting diodes,lasers,and photodetectors.Their superior material and optical properties are shared by the counterpart colloidal nanocrystals(NCs),with the additional advantage of quantum confinement that can yield size-dependent optical emission ranging from the near-UV to near-infrared wavelengths.So far,intensive research efforts have been devoted to the optical characterization of perovskite NC ensembles,revealing not only fundamental exciton relaxation and recombination dynamics but also lowthreshold amplified spontaneous emission and novel superfluorescence effects.Meanwhile,the application of single-particle spectroscopy techniques to perovskite NCs has helped to resolve a variety of optical properties for which there are few equivalents in traditional colloidal NCs,mainly including nonblinking photoluminescence,suppressed spectral diffusion,stable exciton fine structures,and coherent singlephoton emission.While the main purpose of ensemble optical studies is to guide the smooth development of perovskite NCs in classical optoelectronic applications,the rich observations from single-particle optical studies mark the emergence of a potential platform that can be exploited for quantum information technologies.

Computational functionality-driven design of semiconductors for optoelectronic applications

The rapid development of the semiconductor industry has motivated researchers passion for accelerating the discovery of advanced optoelectronic materials.Computational functionality-driven design is an emerging branch of material science that has become effective at making material predictions.By combining advanced solid-state knowledge and high-throughput firstprinciples computational approaches with intelligent algorithms plus database development,experts can now efficiently explore many novel materials by taking advantage of the power of supercomputer architectures.Here,we discuss a set of typical design strategies that can be used to accelerate inorganic optoelectronic materials discovery from computer simulations:In silico computational screening;knowledge-based inverse design;and algorithm-based searching.A few representative examples in optoelectronic materials design are discussed to illustrate these computational functionality-driven modalities.Challenges and prospects for the computational functionality-driven design of materials are further highlighted at the end of the review.

New materials based on carbazole for optoelectronic device applications:Theoretical investigation

A quantum-chemical investigation on the structural and optoelectronic properties of two materials based on carbazole is carried out.The purpose is to display the effect of grafting the fluorine atoms on their optoelectronic and physico-chemical properties.In addition to solubility in the polar solvents and the modification in geometric parameters,the substitution of fluorine destabilizes the HOMO and LUMO levels,decreases the band gap energy and raises conjugation length.These properties suggest the substituted fluorine compound as a good candidate for optoelectronic applications.

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Silicon-based semiconductor technology has made great breakthroughs in the past few decades,but it is reaching the physical limits of Moore’s law.In recent years,the presence of two-dimensional(2 D)materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties.In consideration of the widely studied hybrid integration of 2 D material detectors and 3 D siliconbased systems,in this paper,the basic properties of several 2 D materials used in photodetectors are summarized.Subsequently,the progress in silicon photonic integrated photodetectors based on 2 D materials is reviewed,followed by the summarization of the device structure and main performances.Then,the combination of some other traditional and2 D devices is discussed as a supplement.Finally,the prospective development of the hybrid 2 D/3 D silicon-based heterostructures is expected.

High-throughput computational material screening of the cycloalkane-based two-dimensional Dion–Jacobson halide perovskites for optoelectronics

Two-dimensional(2D) layered perovskites have emerged as potential alternates to traditional three-dimensional(3D)analogs to solve the stability issue of perovskite solar cells. In recent years, many efforts have been spent on manipulating the interlayer organic spacing cation to improve the photovoltaic properties of Dion–Jacobson(DJ) perovskites. In this work, a serious of cycloalkane(CA) molecules were selected as the organic spacing cation in 2D DJ perovskites, which can widely manipulate the optoelectronic properties of the DJ perovskites. The underlying relationship between the CA interlayer molecules and the crystal structures, thermodynamic stabilities, and electronic properties of 58 DJ perovskites has been investigated by using automatic high-throughput workflow cooperated with density-functional(DFT) calculations.We found that these CA-based DJ perovskites are all thermodynamic stable. The sizes of the cycloalkane molecules can influence the degree of inorganic framework distortion and further tune the bandgaps with a wide range of 0.9–2.1 eV.These findings indicate the cycloalkane molecules are suitable as spacing cation in 2D DJ perovskites and provide a useful guidance in designing novel 2D DJ perovskites for optoelectronic applications.

Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

Since two-dimensional （2D） graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalco- genides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some per- sonal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.

Two-dimensional organic-inorganic hybrid perovskite: from material properties to device applications

The two-dimensional（2D） perovskite（including pure-2D and quasi-2D） is formed by introducing large-group ammonium halides into conventional bulk perovskite. In the past twenty years, 2D perovskite materials were widely developed with the enriched species and advanced physicalknowledge in material characteristics as well as optoelectronic device applications. To review achievments in 2D perovskite,the fundamental mechanism and properties of 2D perovskite are introduced to offer insight into device performance.Moreover, the preparation methods of 2D perovskite films are summarized and compared. The latest successful applications of the 2D perovskite in the solar cells and light-emitting diodes fields, especially the advanced stability of 2D perovskite solar cells（PeSCs） and the efficient 2D perovskite lightemitting diodes（PeLEDs）, are also achieved. Furthermore, the challenges and outlook of 2D perovskite materials are proposed.

Purely organic optoelectronic materials with ultralong-lived excited states under ambient conditions

The exponential growth of utilizing synthetic organic molecules in optoelectronic applications poses strong demands for rational control over the excited states of the materials. The manipulation of excited states through molecular design has led to the development of high-performance optoelectronic devices with tunable emission colors, high quantum efficiencies and efficient energy/charge transfer processes. Recently, a significant breakthrough in lifetime tuning of excited states has been made;the purely organic molecules were found to have ultralonglived excited state under ambient conditions with luminescence lifetimes up to 1.35 s, which are several orders of magnitude longer than those of conventional organic fluorophores. Given the conceptual advance in understanding the fundamental behavior of excited state tuning in organic luminescent materials, the investigations of organic ultralong room-temperature phosphorescence(OURTP) should provide new directions for researches and have profound impacts on many different disciplines. Here, we summarized the recent understandings on the excited state tuning, the reported OURTP molecules and their design considerations,the spectacular photophysical performance, and the amazing optoelectronic applications of the newly emerged organic optoelectronic materials that free of heavy metals.

Telluride semiconductor nanocrystals:progress on their liquid-phase synthesis and applications

The synthesis of colloidal telluride semiconductor nanocrystals(CT-SNCs)is more challenging than that of chalcogenides,due to the smaller electron affinity of tellurium than that of sulfur and selenium,which is attributed to its metalloid property.While some new potential strategies were developing with the increasing demand of CT-SNCs,the cation exchange reaction(CER)has particularly become a new strategy to synthesize highquality CT-SNCs and their corresponded hetero-nanostructures.This review summarizes the synthesis strategies of CT-SNCs,including traditional methods and new methods with emphasis on CERs,and their resulting CTSNCs with well-controlling size,shape,composition,crystallization and hetero-interfaces cooperatively.The progressive synthesis methods give rise to the excellent optical properties of CT-SNCs.This review also covers the recent progress of their applications in the field of photoelectric detection,catalysis,batteries and biology.The new hybrid CT-SNCs nanostructures are also emphasized and systematically discussed due to their enhanced properties.

Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics

Tremendous efforts have been devoted to preparing the ultrathin two-dimensional(2D)transition-metal dichalcogenides(TMDCs)and TMDCS-based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade.However,to fulfill the demands for practical applications,the batch production of 2D TMDCs with high quality and large area at the mild condi-tions is still a challenge.This feature article reviews the state-of-the art research progresses that focus on the preparation and the applications in elec-tronics and optoelectronics of 2D TMDCs and their van der Waals hetero-junctions.First,the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined.Then,recent progress on the application of fabricated 2D TMDCs based materials is revealed with particular attention to electronic(eg,field effect transistors and logic circuits)and optoelectronic(eg,photodetectors,photovoltaics,and light emitting diodes)devices.Finally,the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

Exploration of B-site alloying in partially reducing Pb toxicity and regulating thermodynamic stability and electronic properties of halide perovskites

Alloying strategies provide a high degree of freedom for reducing lead toxicity,improving thermodynamic stability, tuning the optoelectronic properties of ABX3 halide perovskites by varying the alloying element species and their contents.Given the key role of B-site cations in contributing band edge states and modulating structure factors in halide perovskites,the partial replacement of Pb2+with different B-site metal ions has been proposed.Although several experimental attempts have been made to date,the effect of B-site alloying on the stability and electronic properties of halide perovskites has not been fully explored.Herein,we take cubic CsPbBr3 perovskite as the prototype material and systematically explore the effects of B-site alloying on Pb-containing perovskites.According to the presence or absence of the corresponding perovskite phase,the ten alloying elements investigated are classified into three types(i.e.,Type Ⅰ:Sn Ge,Ca,Sr;Type Ⅱ:Cd,Mg,Mn;Type Ⅲ:Ba,Zn,Cu).Based on the first-principles calculations,we obtain the following conclusions.First,these B-site alloys will exist as disordered solid solutions rather than ordered structures at room temperature throughout the composition space.Second,the alloying of Sn and Ge enhances the thermodynamic stability of the cubic perovskite host,whereas the alloying of the other elements has no remarkable effect on the thermodynamic stability of the cubic perovskite host.Third,the underlying physical mechanism for bandgap tuning can be attributed to the atomic orbital energy mismatch or quantum confinement effect.Fourth,the alloying of different elements demonstrates the diversity in the regulation of crystal structure and electronic properties,indicating potential applications in photovoltaic s and self-trapped exciton-based light-emitting applications.Our work provides theoretical guidance for using alloying strategies to reduce lead toxicity,enhance stability,and optimize the electronic properties of halide perovskites to meet the needs of optoelectronic applications.

Self-trapped excitons in two-dimensional perovskites

With strong electron-phonon coupling,the self-trapped excitons are usually formed in materials,which leads to the local lattice distortion and localized excitons.The self-trapping strongly depends on the dimensionality of the materials.In the three dimensional case,there is a potential barrier for self-trapping,whereas no such barrier is present for quasi-one-dimensional systems.Two-dimensional(2D)systems are marginal cases with a much lower potential barrier or nonex istent potential barrier for the self-trapping,leading to the easier formation of self-trapped states.Self-trapped excitons emission exhibits a broadband emission with a large Stokes shift below the bandgap.2D perovskites are a class of layered structure material with unique optical properties and would find potential promising optoelectronic.In particular,self-trapped excitons are present in 2D per-ovskites and can significantly influence the optical and electrical properties of 2D perovskites due to the soft characteristic and strong electron-phonon interaction.Here,we summarized the luminescence characteristics,origins,and characterizations of self-trapped excitons in 2D perovskites and finally gave an introduction to their applications in optoelectronics.

Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication

The fabrication of zinc oxide(ZnO) from inexpensive solution-processing techniques,namely,electrochemical deposition and electrospinning were explored on various conducting and mesoporous semiconducting surfaces.Optimised conditions were derived for template- and self-assisted nano/micro structures and composites. ZnO thin films were annealed at a fixed temperature under ambient conditions and characterised using physical and optical techniques.The photocurrent response in the UV region shows a fast rise and double decay behaviour with a fast component followed by a slow oscillatory decay.Photocurrent results were correlated with surface chemical analysis from X-ray photoelectron spectroscopy.Various characterisation details reveal the importance of fabrication parameter optimisation for useful low-cost optoelectronic applications.