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Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process 被引量:1
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作者 余长亮 毛陆虹 +3 位作者 宋瑞良 朱浩波 王蕊 王倩 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第8期1198-1203,共6页
A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimen... A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12. 展开更多
关键词 PHOTO-DETECTOR optoelectronic integrated receiver CMOS active inductor
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