The concept of remote center of motion(RCM)is pivotal in a myriad of robotic applications,encompa-ssing areas such as medical robotics,orientation devices,and exoskeletal systems.The efficacy of RCM technology is a de...The concept of remote center of motion(RCM)is pivotal in a myriad of robotic applications,encompa-ssing areas such as medical robotics,orientation devices,and exoskeletal systems.The efficacy of RCM technology is a determining factor in the success of these robotic domains.This paper offers an exhaustive review of RCM technologies,elaborating on their various methodologies and practical implementations.It delves into the unique characteristics of RCM across different degrees of freedom(DOFs),aiming to distill their fundamental principles.In addition,this paper categorizes RCM approaches into two primary classifications:design based and control based.These are further organized according to their respective DOFs,providing a concise summary of their core methodologies.Building upon the understanding of RCM’s versatile capabilities,this paper then transitions to an in-depth exploration of its applications across diverse robotic fields.Concluding this review,we critically analyze the existing research challenges and issues that are inherently present in both RCM methodologies and their applications.This discussion is intended to serve as a guiding framework for future research endeavors and practical deployments in related areas.展开更多
Single event multiple-cell upsets（MCU） increase sharply with the semiconductor devices scaling. The impacts of several test factors on heavy ion single event MCU in 65 nm SRAM are studied based on the buildup of MCU...Single event multiple-cell upsets（MCU） increase sharply with the semiconductor devices scaling. The impacts of several test factors on heavy ion single event MCU in 65 nm SRAM are studied based on the buildup of MCU test data acquiring and processing technique, including the heavy ion LET, the tilt angle, the device orientation, the test pattern and the supply voltage; the MCU physical bitmaps are extracted correspondingly. The dependencies of parameters such as the MCU percentage, MCU mean and topological pattern on these factors are summarized and analyzed. This work is meaningful for developing a more reasonable single event test method and assessing the effectiveness of anti-MCU strategies on nanometer-scale devices.展开更多
基金supported in part by the National Key R&D Program of China(Grant No.2022YFB4701200)the Ningbo Key Projects of Science and Technology Innovation 2025 Plan of China(Grant No.2022Z070)+2 种基金the Zhejiang Provincial Natural Science Foundation of China(Grant No.LD22E050011)the Science Fund for Creative Research Groups of the National Natural Science Foundation of China(Grant No.T2121003)the National Natural Science Foundation of China(Grant No.52205003).
文摘The concept of remote center of motion(RCM)is pivotal in a myriad of robotic applications,encompa-ssing areas such as medical robotics,orientation devices,and exoskeletal systems.The efficacy of RCM technology is a determining factor in the success of these robotic domains.This paper offers an exhaustive review of RCM technologies,elaborating on their various methodologies and practical implementations.It delves into the unique characteristics of RCM across different degrees of freedom(DOFs),aiming to distill their fundamental principles.In addition,this paper categorizes RCM approaches into two primary classifications:design based and control based.These are further organized according to their respective DOFs,providing a concise summary of their core methodologies.Building upon the understanding of RCM’s versatile capabilities,this paper then transitions to an in-depth exploration of its applications across diverse robotic fields.Concluding this review,we critically analyze the existing research challenges and issues that are inherently present in both RCM methodologies and their applications.This discussion is intended to serve as a guiding framework for future research endeavors and practical deployments in related areas.
文摘Single event multiple-cell upsets（MCU） increase sharply with the semiconductor devices scaling. The impacts of several test factors on heavy ion single event MCU in 65 nm SRAM are studied based on the buildup of MCU test data acquiring and processing technique, including the heavy ion LET, the tilt angle, the device orientation, the test pattern and the supply voltage; the MCU physical bitmaps are extracted correspondingly. The dependencies of parameters such as the MCU percentage, MCU mean and topological pattern on these factors are summarized and analyzed. This work is meaningful for developing a more reasonable single event test method and assessing the effectiveness of anti-MCU strategies on nanometer-scale devices.
