To achieve the electric field strength and the induced currents in equivalence in susceptibility tests with the high-level field radiation above 400 MHz,a double differential-mode(DM) current injection method based on...To achieve the electric field strength and the induced currents in equivalence in susceptibility tests with the high-level field radiation above 400 MHz,a double differential-mode(DM) current injection method based on directional couplers is proposed.Two cascaded symmetrical directional couplers compose a coupling device to inject the DM currents.When the coupling device is used,two devices are necessary to achieve the equivalence between radiation and injection,i.e.the equivalence between the injected voltages and the field strength,which is linear,regardless of the characteristics of the equipment under test(EUT).The results are verified by experiments using typical coaxial cables and nonlinear devices,where the equivalence between the nonlinear EUT responses induced by radiation and injection at both ends is achieved by using two coupling devices.At a frequency up to 1.75 GHz,the maximal experimental error is only 3.39%.The experimental results confirm the accuracy of the proposed method even both the EUTs work in the nonlinear region.The proposed method is applicable for radiated susceptibility(RS) testing of interconnected systems in the microwave frequency band.展开更多
A novel low-swing interface circuit for high-speed on-chip asynchronous interconnection is proposed in this paper. It takes a differential level-triggered latch to recover digital signal with ultra low-swing voltage l...A novel low-swing interface circuit for high-speed on-chip asynchronous interconnection is proposed in this paper. It takes a differential level-triggered latch to recover digital signal with ultra low-swing voltage less than 50 mV, and the driver part of the interface circuit is optimized for low power using the driver-array method, With a capacity to work up to 500 MHz, the proposed circuit, which is simulated and fabricated using SMIC 0.18-pm 1.8-V digital CMOS technology, consumes less power than previously reported designs.展开更多
基金supported by National Basic Research Program of China(973 Program)
文摘To achieve the electric field strength and the induced currents in equivalence in susceptibility tests with the high-level field radiation above 400 MHz,a double differential-mode(DM) current injection method based on directional couplers is proposed.Two cascaded symmetrical directional couplers compose a coupling device to inject the DM currents.When the coupling device is used,two devices are necessary to achieve the equivalence between radiation and injection,i.e.the equivalence between the injected voltages and the field strength,which is linear,regardless of the characteristics of the equipment under test(EUT).The results are verified by experiments using typical coaxial cables and nonlinear devices,where the equivalence between the nonlinear EUT responses induced by radiation and injection at both ends is achieved by using two coupling devices.At a frequency up to 1.75 GHz,the maximal experimental error is only 3.39%.The experimental results confirm the accuracy of the proposed method even both the EUTs work in the nonlinear region.The proposed method is applicable for radiated susceptibility(RS) testing of interconnected systems in the microwave frequency band.
基金the 973 Program of China (Grant No.G1999032903)the National Science Fund for Distinguished Young Scholars (Grant No.60025101)the Major Program of National Natural Science Foundation of China (Grant No.90707002)
文摘A novel low-swing interface circuit for high-speed on-chip asynchronous interconnection is proposed in this paper. It takes a differential level-triggered latch to recover digital signal with ultra low-swing voltage less than 50 mV, and the driver part of the interface circuit is optimized for low power using the driver-array method, With a capacity to work up to 500 MHz, the proposed circuit, which is simulated and fabricated using SMIC 0.18-pm 1.8-V digital CMOS technology, consumes less power than previously reported designs.
