The microplasma oxidation process of LY 12 Al alloy in Na2SiO3-KOH-NaAL2 system has been studied. The voltage-time curve of oxidation process is changed with the variation of current ...The microplasma oxidation process of LY 12 Al alloy in Na2SiO3-KOH-NaAL2 system has been studied. The voltage-time curve of oxidation process is changed with the variation of current densities. The voltage breakdown and hardness of coating increase with increasing current density. The phase composition, morphologies, element and the distribution of ceramic coating are investigated by XRD, EPMA.展开更多
The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the...The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.展开更多
文摘The microplasma oxidation process of LY 12 Al alloy in Na2SiO3-KOH-NaAL2 system has been studied. The voltage-time curve of oxidation process is changed with the variation of current densities. The voltage breakdown and hardness of coating increase with increasing current density. The phase composition, morphologies, element and the distribution of ceramic coating are investigated by XRD, EPMA.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204112.61204089 and 61306099the Guangdong Provincial Natural Science Foundation under Grant No 2014A030313656
文摘The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.
