By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon ...By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.展开更多
Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen comple...Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.展开更多
A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field (HMCZ) is proposed. Oxygen depleted surface melt, driven to the growth interface by the thermal Marangon...A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field (HMCZ) is proposed. Oxygen depleted surface melt, driven to the growth interface by the thermal Marangoni flow, determines oxygen concentration in the grown crystals. Systematic study was carried out to investigate effects of growth parameters on oxygen incorporation into crystals.展开更多
Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been s...Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been sufficiently reported.In this paper,it was focused on the preparation of 400-mm silicon（100） crystal lightly doped with boron from 28-in.hot zones.Resistivity uniformity and oxygen concentration of the silicon crystal were investigated by direct-current（DC） four-point probes method and Fourier transform infrared spectroscopy（FTIR）,respectively.The global heat transfer,melt flow and oxygen distribution were calculated by finite element method（FEM）.The results show that 28-in.hot zones can replace conventional 32 in.ones to grow 400-mm-diameter silicon single crystals.The change in crucible diameter can save energy,reduce cost and improve efficiency.The trend of oxygen distribution obtained in calculations is in good agreement with experimental values.The present model can well predict the 400-mm-diameter silicon crystal growth and is essential for the optimization of furnace design and process condition.展开更多
文摘By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.
文摘Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.
文摘A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field (HMCZ) is proposed. Oxygen depleted surface melt, driven to the growth interface by the thermal Marangoni flow, determines oxygen concentration in the grown crystals. Systematic study was carried out to investigate effects of growth parameters on oxygen incorporation into crystals.
基金financially supported by the Major National Science and Technology Projects(No.2008ZX02401)
文摘Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines.However,information about large-diameter low-cost preparation technology has not been sufficiently reported.In this paper,it was focused on the preparation of 400-mm silicon（100） crystal lightly doped with boron from 28-in.hot zones.Resistivity uniformity and oxygen concentration of the silicon crystal were investigated by direct-current（DC） four-point probes method and Fourier transform infrared spectroscopy（FTIR）,respectively.The global heat transfer,melt flow and oxygen distribution were calculated by finite element method（FEM）.The results show that 28-in.hot zones can replace conventional 32 in.ones to grow 400-mm-diameter silicon single crystals.The change in crucible diameter can save energy,reduce cost and improve efficiency.The trend of oxygen distribution obtained in calculations is in good agreement with experimental values.The present model can well predict the 400-mm-diameter silicon crystal growth and is essential for the optimization of furnace design and process condition.
