Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures（P_（O2））.The effect of P_（O2） on the crystal structure,preferred orientation as well a...Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures（P_（O2））.The effect of P_（O2） on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_（O2）.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A1_2O_3（000 1）.With increasing P_（O2）,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.展开更多
The influence of oxygen partial pressure on the optical properties of NiOx thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented. With t...The influence of oxygen partial pressure on the optical properties of NiOx thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented. With the oxygen ratio increasing, the reflectivity of the as-deposited films decreased, and optical band gap increased. Thermogravimetric analysis （TGA） showed that the decompose temperature of the films was above 250℃. After annealed at 400℃, only films deposited at 5% O2/Ar ratio showed high optical contrast which was about 52%. Scanning electron microscope （SEM） results revealed that the changes of surface morphology were responsible for the optical property variations of the films after annealing. Its thermal stability and high optical contrast before and after annealing made it a good potential write-once optical recording medium. OCIS codes： 310.6860, 310.3840, 210.4810, 300.6470.展开更多
The third harmonic generation(THG),linear and nonlinear optical absorption coefficients(OACs),and refractive index changes(RICs)are investigated in a Woods-Saxon quantum well(QW)modulated by the hydrostatic pressure a...The third harmonic generation(THG),linear and nonlinear optical absorption coefficients(OACs),and refractive index changes(RICs)are investigated in a Woods-Saxon quantum well(QW)modulated by the hydrostatic pressure and applied electric field.The effect of non-uniform aluminum doping(position-dependent effective mass(PDEM))on the mass of the system is discussed,and further to explore the influence of PDEM on the nonlinear THG,OACs,and RICs of the Woods-Saxon QW.These nonlinear optical properties above are obtained using the compact-density matrix formalism.The electron states in a Woods-Saxon QW under the constant effective mass(CEM)and PDEM are calculated by solving the Schr?dinger equation via the finite difference technique.The contributions from competing effects of the hydrostatic pressure and applied electric field to the nonlinear optical properties with CEM and PDEM are reported,as well as the comparison with each other.The observations reveal that the regulation of external fields and the influence of PDEM play an important role in the photoelectric properties of QW.展开更多
Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and ele...Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A ＂blue shift＂ of UV absorption edge is observed with the increase of working press ure.展开更多
基金Funded by National Natural Science Foundation of China(Nos.51272195,51521001)111 project(No.B13035)+1 种基金Hubei Provincial National Natural Science Foundation(No.2015CFB724)Fundamental Research Funds for the Central Universities(Nos.2013-ZD-4,2014-KF-3)
文摘Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures（P_（O2））.The effect of P_（O2） on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_（O2）.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A1_2O_3（000 1）.With increasing P_（O2）,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.
基金This work is supported by the National High Technology Development Program of China under Grant No.2004AA31G230.
文摘The influence of oxygen partial pressure on the optical properties of NiOx thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented. With the oxygen ratio increasing, the reflectivity of the as-deposited films decreased, and optical band gap increased. Thermogravimetric analysis （TGA） showed that the decompose temperature of the films was above 250℃. After annealed at 400℃, only films deposited at 5% O2/Ar ratio showed high optical contrast which was about 52%. Scanning electron microscope （SEM） results revealed that the changes of surface morphology were responsible for the optical property variations of the films after annealing. Its thermal stability and high optical contrast before and after annealing made it a good potential write-once optical recording medium. OCIS codes： 310.6860, 310.3840, 210.4810, 300.6470.
基金Project supported by the National Natural Science Foundations of China(No.51971193)。
文摘The third harmonic generation(THG),linear and nonlinear optical absorption coefficients(OACs),and refractive index changes(RICs)are investigated in a Woods-Saxon quantum well(QW)modulated by the hydrostatic pressure and applied electric field.The effect of non-uniform aluminum doping(position-dependent effective mass(PDEM))on the mass of the system is discussed,and further to explore the influence of PDEM on the nonlinear THG,OACs,and RICs of the Woods-Saxon QW.These nonlinear optical properties above are obtained using the compact-density matrix formalism.The electron states in a Woods-Saxon QW under the constant effective mass(CEM)and PDEM are calculated by solving the Schr?dinger equation via the finite difference technique.The contributions from competing effects of the hydrostatic pressure and applied electric field to the nonlinear optical properties with CEM and PDEM are reported,as well as the comparison with each other.The observations reveal that the regulation of external fields and the influence of PDEM play an important role in the photoelectric properties of QW.
基金financially supported by the National Natural Science Foundation of China (No. 51571010)
文摘Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A ＂blue shift＂ of UV absorption edge is observed with the increase of working press ure.
