We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿...多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿真及其一维解析模型进行了分析,讨论了晶粒边界、沟道长度与Kink效应的关系,提出建立适合电路仿真的一维解析模型的关键与展望。展开更多
The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and...The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.展开更多
系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约...系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约为2.1 e V,折射率约为3的a-SiO_x∶B∶H薄膜,作为非晶硅顶电池的p1层,以及带隙为2.2~2.5 e V,折射率为2.0~2.5,晶化率为20%~50%的nc-SiO_x∶P∶H薄膜,作为非晶硅/纳米硅叠层电池的中间反射层和纳米硅的底电池n2层。最后将优化后的a-SiO_x∶B∶H和nc-SiO_x∶P∶H薄膜应用到非晶硅/纳米硅薄膜叠层电池中,在0.79 m^2的玻璃基板上制备出初始峰值功率为101.1 W、全面积初始转换效率为12.8%、稳定峰值功率为87.3 W、全面积稳定转换效率为11.1%的非晶硅/纳米硅叠层电池。展开更多
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿真及其一维解析模型进行了分析,讨论了晶粒边界、沟道长度与Kink效应的关系,提出建立适合电路仿真的一维解析模型的关键与展望。
基金supported by the Natural Science Foundation of Fujian Province of China (Grant No. A0220001)Science Research Project of Leshan Vocational & Technical College (Grant No. KY2011001)the Key Research Project in Science and Technology of Leshan (Grant No. 2011GZD050)
文摘The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.
文摘系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约为2.1 e V,折射率约为3的a-SiO_x∶B∶H薄膜,作为非晶硅顶电池的p1层,以及带隙为2.2~2.5 e V,折射率为2.0~2.5,晶化率为20%~50%的nc-SiO_x∶P∶H薄膜,作为非晶硅/纳米硅叠层电池的中间反射层和纳米硅的底电池n2层。最后将优化后的a-SiO_x∶B∶H和nc-SiO_x∶P∶H薄膜应用到非晶硅/纳米硅薄膜叠层电池中,在0.79 m^2的玻璃基板上制备出初始峰值功率为101.1 W、全面积初始转换效率为12.8%、稳定峰值功率为87.3 W、全面积稳定转换效率为11.1%的非晶硅/纳米硅叠层电池。
