Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electrom...Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons.The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors.In this work,significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture.Various size and elemental composition of monometallic Ag and Au NPs,as well as bimetallic alloy Ag Au NPs,are fabricated on Ga N(0001)by the solid-state dewetting approach.The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs,resulting in the highly enhanced photoresponsivity of 112 A W-1,detectivity of 2.4×1012 Jones and external quantum e ciency of 3.6×104%with the high Ag percentage of Ag Au alloy NPs at a low bias of 0.1 V.The Ag Au alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms,respectively.The improved photoresponse with the Ag Au alloy NPs is correlated with the simultaneous e ect of strong plasmon absorption and scattering,increased injection of hot electrons into the Ga N conduction band and reduced barrier height at the alloy NPs/Ga N interface.展开更多
Herein, high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared, respectively. According to the absorption spectra, the bandgaps of n-ZnO and p-BiOCl are...Herein, high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared, respectively. According to the absorption spectra, the bandgaps of n-ZnO and p-BiOCl are confirmed as ~3.3 and~3.5 eV, respectively. Subsequently, a p-BiOCl/n-ZnO heterostructural photodetector is constructed after a facile mechanical bonding and post annealing process. At –5 V bias, the photocurrent of the device under 350 nm irradiation is ~800 times higher than that in dark, which indicates its strong UV light response characteristic. However, the on/off ratio of In–ZnO–In photodetector is ~20 and the Cu–BiOCl–Cu photodetector depicts very weak UV light response. The heterostructure device also shows a short decay time of 0.95 s, which is much shorter than those of the devices fabricated from pure ZnO thin film and BiOCl nanoflakes. The p-BiOCl/n-ZnO heterojunction photodetector provides a promising pathway to multifunctional UV photodetectors with fast response, high signal-to-noise ratio, and high selectivity.展开更多
ZnO microrods are synthesized using the vapor phase transport method, and the magnetron sputtering is used to decorate the A1 nanoparticles （NPs） on a single ZnO microrod. The micro-PL and I-V responses are measured...ZnO microrods are synthesized using the vapor phase transport method, and the magnetron sputtering is used to decorate the A1 nanoparticles （NPs） on a single ZnO microrod. The micro-PL and I-V responses are measured before and after the decoration orAl NPs. The FDTD stimulation is also carried out to demonstrate the optical field distribution around the decoration of Al NPs on the surface of a ZnO microrod. Due to an implementation of AI NPs, the ZnO microrod exhibits an improved photoresponse behavior. In addition, AI NPs induced localized surface plasmons （LSPs） as well as improved optical field confinement can be ascribed to an enhancement of ultraviolet （UV） response. This research provides a method for improving the responsivity of photodetectors.展开更多
In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results sho...In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.展开更多
In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consi...In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si1-xGex/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (RoA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.展开更多
Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, an...Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.展开更多
The ultra-violet（UV） detection has a wide application in both civil and military fields.ZnO is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages,such as wide ...The ultra-violet（UV） detection has a wide application in both civil and military fields.ZnO is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages,such as wide bandgap,low cost,being environment-friendly,high radiation hardness,etc.Moreover,the alloying of ZnO with MgO to make ZnMgO could continually increase the band gap from ~ 3.3 eV to ~ 7.8 eV,which allows both solar blind and visible blind UV radiation to be detected.As is well known,ZnO is stabilized in the wurtzite structure,while MgO is stabilized in the rock salt structure.As a result,with increasing the Mg content,the crystal structure of ZnMgO alloy will change from wurtzite structure to rock salt structure.Therefore,ZnMgO photodetectors can be divided into three types based on the structures of alloys,namely,wurtzite-phase,cubic-phase and mixed-phase devices.In this paper,we review recent development and make the prospect of three types of ZnMgO UV photodetectors.展开更多
Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable m...Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.展开更多
Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent ...Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.展开更多
A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-...A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)film.The results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light.Moreover,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and voltages.At zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,respectively.In general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.展开更多
A novel integrated ultraviolet（UV） photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared（IR） photodiode. The IR photodiode...A novel integrated ultraviolet（UV） photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared（IR） photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV–IR photodetector has a maximum spectral responsivity of 0.27 A·W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000,which is much higher than that of the single UV photodiode.展开更多
Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-...Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.展开更多
Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrate...Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrated devices with more functionalities rather than basic photo-detecting ability are highly required and have been triggered ever-growing interest in scientific and industrial communities.Ferroelectric thin films have become a potential candidate in the field of UV detection due to their wide bandgap and unique photovoltaic characteristics.Additionally,ferroelectric thin films perform excellent dielectric,piezoelectric,pyroelectric,acousto-optic effects,etc.,which can satisfy the demand for the diversified development of UV detectors.In this review,according to the different roles of ferroelectric thin films in the device,the UV photodetectors based on ferroelectric films are classified into ferroelectric depolarization field driven type,ferroelectric depolarization field and built-in electric field co-driven type,and ferroelectric field enhanced type.These three types of ferroelectric UV photodetectors have great potential and are expected to promote the development of a new generation of UV detection technology.At the end of the paper,the advantages and challenges of three types of ferroelectric UV photodetectors are summarized,and the possible development direction in the future is proposed.展开更多
Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tr...Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous challenge.Herein,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating method.Profited from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection repeatability.Functioned as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication system.These results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.展开更多
In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various a...In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.展开更多
In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemic...In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemical vapor deposition(MOCVD)technique,and the growth parameters,including the AlGaN growth temperature,preheating temperature of the p-GaN layer,and NH3/N2 flow rate,are optimized to improve the quality of the epilayer.The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density.The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse.With a p-GaN of 1µm,the UV PD demonstrates a significant switching ratio and transconductance of 107 and 127.3 mS mm^(-1),respectively.Acting as a UV PD,it also exhibits a high light on/off ratio(I_(light)/I_(dark))of 6.35×10^(5),a high responsivity(R)of 48.11 A W^(-1),and a detectivity(D*)of 6.85×10^(12)Jones under 365-nm UV illumination with light power density of 86.972 mW cm^(-2).The high-performance HEMT and UV detectors,which incorporate p-GaN etchless technology,have been refined through advancements in epitaxial growth and structural design.These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.展开更多
基金Financial support from the National Research Foundation of Korea(NRF)Grant funded by the Korean Government(MSIP)(Nos.NRF-2019R1A2C4069438 and NRF-2018R1A6A1A03025242)in part by the research grant of Kwangwoon University in 2020.
文摘Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons.The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors.In this work,significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture.Various size and elemental composition of monometallic Ag and Au NPs,as well as bimetallic alloy Ag Au NPs,are fabricated on Ga N(0001)by the solid-state dewetting approach.The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs,resulting in the highly enhanced photoresponsivity of 112 A W-1,detectivity of 2.4×1012 Jones and external quantum e ciency of 3.6×104%with the high Ag percentage of Ag Au alloy NPs at a low bias of 0.1 V.The Ag Au alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms,respectively.The improved photoresponse with the Ag Au alloy NPs is correlated with the simultaneous e ect of strong plasmon absorption and scattering,increased injection of hot electrons into the Ga N conduction band and reduced barrier height at the alloy NPs/Ga N interface.
基金supported by the National Natural Science Foundation of China (Grant No. 61705043, 51872050 and11811530065)the National Key Research and Development Program of China (Grant No. 2017YFA0204600)+2 种基金the Natural Science Foundation of Jiangsu Province (No. BK20160568)National Postdoctoral Science Foundation of China (Grant No.2017M611411, 2018M640338, 2018T110344 and2019T120299)the Ministry of Education Joint Fund for Equipment Pre-Research (6141A02033241)。
文摘Herein, high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared, respectively. According to the absorption spectra, the bandgaps of n-ZnO and p-BiOCl are confirmed as ~3.3 and~3.5 eV, respectively. Subsequently, a p-BiOCl/n-ZnO heterostructural photodetector is constructed after a facile mechanical bonding and post annealing process. At –5 V bias, the photocurrent of the device under 350 nm irradiation is ~800 times higher than that in dark, which indicates its strong UV light response characteristic. However, the on/off ratio of In–ZnO–In photodetector is ~20 and the Cu–BiOCl–Cu photodetector depicts very weak UV light response. The heterostructure device also shows a short decay time of 0.95 s, which is much shorter than those of the devices fabricated from pure ZnO thin film and BiOCl nanoflakes. The p-BiOCl/n-ZnO heterojunction photodetector provides a promising pathway to multifunctional UV photodetectors with fast response, high signal-to-noise ratio, and high selectivity.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61475035 and 61275054the Science and Technology Support Program of Jiangsu Province under Grant No BE2016177the Collaborative Innovation Center of Suzhou Nano Science and Technology
文摘ZnO microrods are synthesized using the vapor phase transport method, and the magnetron sputtering is used to decorate the A1 nanoparticles （NPs） on a single ZnO microrod. The micro-PL and I-V responses are measured before and after the decoration orAl NPs. The FDTD stimulation is also carried out to demonstrate the optical field distribution around the decoration of Al NPs on the surface of a ZnO microrod. Due to an implementation of AI NPs, the ZnO microrod exhibits an improved photoresponse behavior. In addition, AI NPs induced localized surface plasmons （LSPs） as well as improved optical field confinement can be ascribed to an enhancement of ultraviolet （UV） response. This research provides a method for improving the responsivity of photodetectors.
文摘In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.
文摘In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si1-xGex/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (RoA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61521064,61522408,61574169,61334007,61474136,and 61574166)the Ministry of Science and Technology of China(Grant Nos.2018YFB0406504,2016YFA0201803,2016YFA0203800,and 2017YFB0405603)+1 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-JSC048 and QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project,China(Grant No.Z171100002017011)
文摘Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.
基金Project supported by the National Natural Science Foundation of China(Grant No.61475153)the 100 Talents Program of the Chinese Academy of Sciences
文摘The ultra-violet（UV） detection has a wide application in both civil and military fields.ZnO is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages,such as wide bandgap,low cost,being environment-friendly,high radiation hardness,etc.Moreover,the alloying of ZnO with MgO to make ZnMgO could continually increase the band gap from ~ 3.3 eV to ~ 7.8 eV,which allows both solar blind and visible blind UV radiation to be detected.As is well known,ZnO is stabilized in the wurtzite structure,while MgO is stabilized in the rock salt structure.As a result,with increasing the Mg content,the crystal structure of ZnMgO alloy will change from wurtzite structure to rock salt structure.Therefore,ZnMgO photodetectors can be divided into three types based on the structures of alloys,namely,wurtzite-phase,cubic-phase and mixed-phase devices.In this paper,we review recent development and make the prospect of three types of ZnMgO UV photodetectors.
基金supported in part by Engineering and Physical Science Research Council (EPSRC) through Engineering Fellowship (EP/R029644/1)Hetero-print Programme Grant (EP/R03480X/1)European Commission through grant references (H2020-MSCAITN2019-861166)。
文摘Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.
基金supported by the National Natural Science Foundation of China(No.62274148),Science Foundation of Zhejiang Sci-Tech University(Nos.22062337-Y,20062224-Y,22062291-Y)Guangxi key laboratory of precision navigation technology and application[Guilin University of Electronic Technology](No.DH202229).
文摘Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)Natural Science Research Start up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921119,XK1060921115,and XK1060921002)+1 种基金National Natural Science Foundation of China(Grant No.62204125)China Postdoctoral Science Foundation(Grant No.2022M721689)。
文摘A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)film.The results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light.Moreover,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and voltages.At zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,respectively.In general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.
基金supported by the National Natural Science Foundation of China(Grant No.61274043)the Key Project of the Ministry of Education of China(Grant No.212125)the State Key Program of the National Natural Science Foundation of China(Grant No.61233010)
文摘A novel integrated ultraviolet（UV） photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared（IR） photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV–IR photodetector has a maximum spectral responsivity of 0.27 A·W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000,which is much higher than that of the single UV photodiode.
基金support of the laboratory of active components and materials,Oum El Bouaghi University.
文摘Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.
基金supported by the Guang Dong Basic and Applied Basic Research Foundation,China(2021B1515120025)。
文摘Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrated devices with more functionalities rather than basic photo-detecting ability are highly required and have been triggered ever-growing interest in scientific and industrial communities.Ferroelectric thin films have become a potential candidate in the field of UV detection due to their wide bandgap and unique photovoltaic characteristics.Additionally,ferroelectric thin films perform excellent dielectric,piezoelectric,pyroelectric,acousto-optic effects,etc.,which can satisfy the demand for the diversified development of UV detectors.In this review,according to the different roles of ferroelectric thin films in the device,the UV photodetectors based on ferroelectric films are classified into ferroelectric depolarization field driven type,ferroelectric depolarization field and built-in electric field co-driven type,and ferroelectric field enhanced type.These three types of ferroelectric UV photodetectors have great potential and are expected to promote the development of a new generation of UV detection technology.At the end of the paper,the advantages and challenges of three types of ferroelectric UV photodetectors are summarized,and the possible development direction in the future is proposed.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)the Joint Funds of the National Natural Science Foundation of China(Grant No.U23A20349)+3 种基金the National Natural Science Foundation of China(Grant No.62305171)the Natural Science Foundation of Jiangsu Province(Grant No.BK20230361)the Natural Science Foundation of Jiangsu Higher Education Institutions(Grant No.23KJB510017)the Natural Science Research Start-up Foundation of Recruiting Talents of NJUPT(Grant Nos.XK1180922062,XK1060921002)。
文摘Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous challenge.Herein,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating method.Profited from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection repeatability.Functioned as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication system.These results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.62204125)+2 种基金the Joint Funds of the National Natural Science Foundation of China(Grant No.U23A20349)the Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.SJCX23_0300)。
文摘In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.
基金supported by the National Natural Science Foundation of China(11904108)Guangdong Basic and Applied Basic Research Foundation(2020B1515020032)"The pearl River Talent Recruitment Program"(2019ZT08X639)。
文摘In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemical vapor deposition(MOCVD)technique,and the growth parameters,including the AlGaN growth temperature,preheating temperature of the p-GaN layer,and NH3/N2 flow rate,are optimized to improve the quality of the epilayer.The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density.The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse.With a p-GaN of 1µm,the UV PD demonstrates a significant switching ratio and transconductance of 107 and 127.3 mS mm^(-1),respectively.Acting as a UV PD,it also exhibits a high light on/off ratio(I_(light)/I_(dark))of 6.35×10^(5),a high responsivity(R)of 48.11 A W^(-1),and a detectivity(D*)of 6.85×10^(12)Jones under 365-nm UV illumination with light power density of 86.972 mW cm^(-2).The high-performance HEMT and UV detectors,which incorporate p-GaN etchless technology,have been refined through advancements in epitaxial growth and structural design.These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.
