Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport...Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport and thus recombination loss at buried interface.Herein,we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO_(2)ETL to accelerate electron transport in PSCs,through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude.Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO_(2)ETL,but the fabrication of perovskite films with larger-grain and the less-trap-states.The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs,favoring for the reduced voltage deficit of PSCs.Benefiting from these merits,the formamidinium lead iodide(FAPbI_(3))PSCs employing such ETLs deliver a champion efficiency of 25.50%,along with much-improved device stability under harsh condi-tions,i.e.,maintain over 95%of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h,as well as mixed-cation PSCs with a champion efficiency of 22.02%and over 3000 h of ambient storage under humidity stability of 40%.Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics.展开更多
Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-typ...Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics.Herein,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface.Consequently,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating stability.Strikingly,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human serum.This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.展开更多
Organic metal halide perovskite materials have excellent photoelectric properties, and the power conversion efficiency(PCE) of the perovskite solar cells(PSCs) has increased from 3.8% to more than 25%. In the developm...Organic metal halide perovskite materials have excellent photoelectric properties, and the power conversion efficiency(PCE) of the perovskite solar cells(PSCs) has increased from 3.8% to more than 25%. In the development of PSCs, innovative architectures were being proposed constantly. However, the use of the electron transport layer(ETL) and hole transport layer(HTL) increases manufacturing costs and process complexity. Perovskite material has ambipolar charge transport characteristics, so it could functionalize as both the optical absorption layer and carrier transport layer(CTL). In this review, we analyzed the p/n-type perovskite materials, perovskite p-n homojunction solar cells, and carrier transport layers-free(CTLs-free) devices. Finally, we propose some innovative device architectures. We hope that this mini review could pave way for the simplification of the architectures, promote the preparation of the low-cost and high-efficiency devices, and accelerate the commercialization of the PSCs.展开更多
The construction of a homojunction is an effective approach for addressing issues such as slow charge separation and charge-transfer kinetics in photoanodes.In the present work,we designed a gradient Si-and Ti-doped F...The construction of a homojunction is an effective approach for addressing issues such as slow charge separation and charge-transfer kinetics in photoanodes.In the present work,we designed a gradient Si-and Ti-doped Fe_(2)O_(3) homojunction photoanode to improve the photoelectrochemical(PEC)performance of a Ti-doped Fe_(2)O_(3) photoanode.Ti-FeOOH nanocorals were synthesized using a hydrothermal process,and Si-FeOOH was grown on Ti-FeOOH nanocorals using a rapid and facile microwaveassisted(MW)technique.By varying the MW irradiation time,the thickness of the Si/Ti:Fe_(2)O_(3) photoanode was adjusted and an optimized 3-Si/Ti:Fe_(2)O_(3) photoelectrode was achieved with a significantly enhanced photocurrent density(1.37 mA cm^(-2) at 1.23 V vs.RHE)and a cathodic shift of the onset potential(150 mV)compared with that of bare Ti-Fe_(2)O_(3).This enhanced PEC performance can be ascribed to homojunction formation and Si gradient doping.The Si dopant increased the donor concentration and the formation of a homojunction improved the intrinsic built-in electric field,thereby promoting charge separation and charge transfer.Furthermore,the as-formed homojunction passivated the surfacetrapping states,consequently improving the charge transfer efficiency(60%at 1.23 VRHE)at the photoanode/electrolyte interface.These findings could pave the way for the microwave-assisted fabrication of diverse efficient homojunction photoanodes for PEC water splitting applications.展开更多
The global commitment to pivoting to sustainable energy and products calls for technology development to utilize solar energy for hydrogen(H_(2))and value-added chemicals production by biomass photoreforming.Herein,a ...The global commitment to pivoting to sustainable energy and products calls for technology development to utilize solar energy for hydrogen(H_(2))and value-added chemicals production by biomass photoreforming.Herein,a novel dual-functional marigold-like Zn_(x)Cd_(1-x)S homojunction has been the production of lactic acid with high-yield and H_(2)with high-efficiency by selective glucose photoreforming.The optimized Zn_(0.3)Cd_(0.7)S exhibits outstanding H_(2)generation(13.64 mmol h^(-1)g^(-1)),glucose conversion(96.40%),and lactic acid yield(76.80%),over 272.80 and 19.21 times higher than that of bare ZnS(0.05 mmol h^(-1)g^(-1))and CdS(0.71 mmol h^(-1)g^(-1))in H_(2)generation,respectively.The marigold-like morphology provides abundant active sites and sufficient substrates accessibility for the photocatalyst,while the specific role of the homojunction formed by hexagonal wurtzite(WZ)and cubic zinc blende(ZB)in photoreforming biomass has been demonstrated by density functional theory(DFT)calculations.Glucose is converted to lactic acid on the WZ surface of Zn_(0.3)Cd_(0.7)S via the photoactive species·O_(2)^(-),while the H_(2)is evolved from protons(H^(+))in H_(2)O on the ZB surface of Zn_(0.3)Cd_(0.7)S.This work paves a promising road for the production of sustainable energy and products by integrating photocatalysis and biorefine.展开更多
Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu...Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.展开更多
High-efficiency sodium-ion batteries(SIBs) are in great demand for energy storage applications,which are dominated by the Na+storage performance of electrode materials.Here,a one-pot solvothermal method is developed t...High-efficiency sodium-ion batteries(SIBs) are in great demand for energy storage applications,which are dominated by the Na+storage performance of electrode materials.Here,a one-pot solvothermal method is developed to construct amorphous/crystalline MoO_(2)(a/c-MoO_(2)) homojunction for boosting Na+storage.Theoretical simulations signify that electrons redistribute at the homogenous interface of a/c-MoO_(2),resulting in an inbuilt driving force to easily adsorb charge carriers and promote the electron/ion transfer ability.Relying on its crystallographic superiorities,the a/c-MoO_(2)homojunction with high Na adsorbability(-1.61 eV) and low Na diffusion energy barrier(0.519 eV) achieves higher capacity(307 mA h g^(-1)at 0.1 A/g),better rate capability and cycling stability than either a-MoO_(2)or c-MoO_(2)counterpart.Combining in-situ X-ray diffraction(XRD) and ex-situ X-ray photoelectron spectroscopy(XPS)techniques,the ’adsorption-insertion-conversion’ mechanism is well established for Na+storage of MoO_(2).Our work opens new opportunities to optimize electrode materials via crystallographic engineering for efficient Na+storage,and helps to better understand the effects of homojunction structure in enhanced electrochemical performance.展开更多
The adding of ZnMgO asymmetric double barriers （ADB） in p-ZnO2（Li, N）/n-ZnO homojunction affects the p-n junction device performance prominently. Two different homojunctions are fabricated on Si （100） substrates...The adding of ZnMgO asymmetric double barriers （ADB） in p-ZnO2（Li, N）/n-ZnO homojunction affects the p-n junction device performance prominently. Two different homojunctions are fabricated on Si （100） substrates by pulsed laser deposition; one is the traditional p-ZnO2 （Li, N）/n-ZnO homojunction with different thicknesses named as S l （250 nm） and S2 （500 nm）, the other is the one with ADB embedded in the n-layer named as Q （265 nm）. From the photoluminescence spectra, defect luminescence present in the S-series devices is effectively limited in the Q device. The current-voltage curve of the Q device shows Zener-diode rectification property because the two-dimensional electron gas tunnels through the narrow ZnMgO barrier under a reverse bias, thus decreasing the working p-n homojunction thickness from 500 nm to 265 nm. The ADB-modified homojunction shows higher carrier mobility in the Q device. The electroluminescence of the ZnO homojunction is improved in Q compared to S2, because the holes in p-type ZnO （Li, N） can cross the wide ZnMgO barrier under a forward bias voltage into the ZnO quantum well. Therefore, electron-hole recombination occurs in the narrow bandgap of n-type ZnO, creating an ultraviolet light-emitting diode using the ZnO homojunction.展开更多
Effective bulk phase and surface charge separation is critical for charge utilization during the photo-catalytic energy conversion process.In this work,the ternary Ni_(2)P-NiS/twinned Mn_(0.5)Cd_(0.5)S(T-MCS)nanohybri...Effective bulk phase and surface charge separation is critical for charge utilization during the photo-catalytic energy conversion process.In this work,the ternary Ni_(2)P-NiS/twinned Mn_(0.5)Cd_(0.5)S(T-MCS)nanohybrids were successfully constructed via combining Ni_(2)P-NiS with T-MCS solid solution for visible light photocatalytic H_(2)evolution.T-MCS is composed of zinc blende Mn_(0.5)Cd_(0.5)S(ZB-MCS)and wurtzite Mn_(0.5)Cd_(0.5)S(WZ-MCS)and those two alternatively arranged crystal phases endow T-MCS with excellent bulk phase charge separation performance for the slight energy level difference between ZB-MCS and WZ-MCS.S-scheme carriers transfer route between NiS and T-MCS can accelerate the interfacial charge separation and retain the active electrons and holes,meanwhile,co-catalyst Ni_(2)P as electron receiver and proton reduction center can further optimize the H_(2)evolution reaction kinetics based on the surface Schottky barrier effect.The above-formed homo-heterojunctions can establish multiple charge transfer channels in the bulk phase of T-MCS and interface of T-MCS and Ni_(2)P-NiS.Under the synergistic effect of twinned homojunction,S-scheme heterojunction,and Schottky barrier,the ternary Ni_(2)P-NiS/T-MCS com-posite manifested an H_(2)production rate of 122.5 mmol h^(-1)g^(-1),which was 1.33,1.24,and 2.58 times higher than those of the NiS/T-MCS(92.4 mmol h^(-1)g^(-1)),Ni_(2)P/T-MCS(98.4 mmol h^(-1)g^(-1)),and T-MCS(47.5 mmol h^(-1)g^(-1)),respectively.This work demonstrates a promising strategy to develop efficient sul-fides photocatalyst toward targeted solar-driven H_(2)evolution through homo-heterojunction engineering.展开更多
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–...Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.展开更多
Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored ...Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi2O2Se are thickness-dependent, the in-plane Bi2O2Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition(CVD) method across the terraces on the mica substrates,where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi2O2Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 102, what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 μs. Comparing with the Bi2O2Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.展开更多
Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially ...Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p–n homojunction ultraviolet detector(UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of -0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices.展开更多
A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic devices.Here,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homog...A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic devices.Here,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homogeneous junction and investigate its electromagnetic transport feature.The Fe-SnS_(2) homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800%in the parallel magnetic field and 600%in the vertical magnetic field,indicating an obvi-ous anisotropic MR feature.In contrast,The MR of Fe-SnS_(2) homojunction is much larger than the pure diamagnetic SnS_(2) and most 2D materials.The application of a gate voltage can regulate the MR effect of Fe-SnS_(2) homojunction devices.Moreover,the stability of Fe-SnS_(2) in air has great application potential.Our Fe-SnS_(2) homojunction has a significant potential in future mag-netic memory applications.展开更多
The manipulation of the surface property of WO_(3) photoanode is the main breakthrough direction to improve its solar water oxidation performance both in thermodynamics and kinetics.Here,we report a WO_(3)(002)/m-WO_(...The manipulation of the surface property of WO_(3) photoanode is the main breakthrough direction to improve its solar water oxidation performance both in thermodynamics and kinetics.Here,we report a WO_(3)(002)/m-WO_(3) homojunction film that is composed of an upper WO_(3) layer with predominant(002)facet(WO_(3)(002))and a lower WO_(3) layer with multi-crystal facets(m-WO_(3))as a photoanode for solar water oxidation.Due to the synergistic effect of WO_(3)(002)layer and m-WO_(3) layer,better water oxidation activity and stability are achieved on the WO_(3)(002)/m-WO_(3) homojunction film relative to the m-WO_(3) and WO_(3)(002)film.Specifically,the improved water oxidation performance on the WO_(3)(002)/m-WO_(3) homojunction film is attributed to the followings.In thermodynamics,the band position differences between WO_(3)(002)layer and m-WO_(3) layer lead to the formation of WO_(3)(002)/m-WO_(3) homojunction,which has positive function of improving their charge separation and transfer.In kinetics,the upper WO_(3)(002)layer of the WO_(3)(002)/m-WO_(3) film has superior activity in the adsorption and activation of water molecules,water oxidation on this homojunction film photoanode is inclined to follow the four-holes pathway,and the corrosion of photoanode from the H_(2)O_(2) intermediate is restrained.The present work provides a new strategy to modify the WO_(3) photoanodes for thermodynamically and kinetically efficient water oxidation.展开更多
Firefighting protective clothing is a crucial protective equipment for firefighters to minimize skin burn and ensure safety firefighting operation and rescue mission.A recent increasing concern is to develop self-powe...Firefighting protective clothing is a crucial protective equipment for firefighters to minimize skin burn and ensure safety firefighting operation and rescue mission.A recent increasing concern is to develop self-powered fire warning materials that can be incorporated into the firefighting clothing to achieve active fire protection for firefighters before the protective clothing catches fire on fireground.However,it is still a challenge to facilely design and manufacture thermoelectric(TE)textile(TET)-based fire warning electronics with dynamic surface conformability and breathability.Here,we develop an alternate coaxial wet-spinning strategy to continuously produce alternating p/n-type TE aerogel fibers involving n-type Ti_(3)C_(2)T_(x)MXene and p-type MXene/SWCNT-COOH as core materials,and tough aramid nanofiber as protective shell,which simultaneously ensure the flexibility and high-efficiency TE power generation.With such alternating p/n-type TE fibers,TET-based self-powered fire warning sensors with high mechanical stability and wearability are successfully fabricated through stitching the alternating p-n segment TE fibers into aramid fabric.The results indicate that TET-based fire warning electronics containing 50 p-n pairs produce the open-circuit voltage of 7.5 mV with a power density of 119.79 nW cm-2 at a temperature difference of 300℃.The output voltage signal is then calculated as corresponding surface temperature of firefighting clothing based on a linear relationship between TE voltage and temperature.The fire alarm response time and flame-retardant properties are further displayed.Such self-powered fire warning electronics are true textiles that offer breathability and compatibility with body movement,demonstrating their potential application in firefighting clothing.展开更多
The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial st...The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore,the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of[-0.3,-0.1] V/A and [0.1, 0.3] V/A and change into metal when the electric field intensity is equal to or higher than0.4 V/A. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices.展开更多
基金financially supported by the project of the National Natural Science Foundation of China(52202115 and 52172101)the China Postdoctoral Science Foundation(2022M722586)+2 种基金the Natural Science Foundation of Chongqing,China(CSTB2022NSCQ-MSX1085)the Shaanxi Science and Technology Innovation Team(2023-CX-TD-44)the Fundamental Research Funds for the Central Universities(3102019JC005 and G2022KY0604)。
文摘Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport and thus recombination loss at buried interface.Herein,we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO_(2)ETL to accelerate electron transport in PSCs,through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude.Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO_(2)ETL,but the fabrication of perovskite films with larger-grain and the less-trap-states.The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs,favoring for the reduced voltage deficit of PSCs.Benefiting from these merits,the formamidinium lead iodide(FAPbI_(3))PSCs employing such ETLs deliver a champion efficiency of 25.50%,along with much-improved device stability under harsh condi-tions,i.e.,maintain over 95%of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h,as well as mixed-cation PSCs with a champion efficiency of 22.02%and over 3000 h of ambient storage under humidity stability of 40%.Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics.
基金funded by the National Natural Science Foundation of China(Grant Nos.62322410,52272168,52161145404,81974530,and 82271721)the Fundamental Research Funds for the Central Universities(Grant No.WK3500000009)+1 种基金the International Projects of the Chinese Academy of Science(CAS)under Grant No.211134KYSB20210011Hubei Provincial Science and Technology Innovation Talents and Services Special Program(Grant No.2022EHB039)。
文摘Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics.Herein,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface.Consequently,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating stability.Strikingly,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human serum.This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.
基金financial support from the Natural Science Foundation of Jiangsu Province (No.BK20191358)。
文摘Organic metal halide perovskite materials have excellent photoelectric properties, and the power conversion efficiency(PCE) of the perovskite solar cells(PSCs) has increased from 3.8% to more than 25%. In the development of PSCs, innovative architectures were being proposed constantly. However, the use of the electron transport layer(ETL) and hole transport layer(HTL) increases manufacturing costs and process complexity. Perovskite material has ambipolar charge transport characteristics, so it could functionalize as both the optical absorption layer and carrier transport layer(CTL). In this review, we analyzed the p/n-type perovskite materials, perovskite p-n homojunction solar cells, and carrier transport layers-free(CTLs-free) devices. Finally, we propose some innovative device architectures. We hope that this mini review could pave way for the simplification of the architectures, promote the preparation of the low-cost and high-efficiency devices, and accelerate the commercialization of the PSCs.
基金supported by the National Research Foundation of Korea(NRF)funded by the Korean government(MSIT)(NRF-2021R1A2C1095669 and NRF-2021R1F1A104936)。
文摘The construction of a homojunction is an effective approach for addressing issues such as slow charge separation and charge-transfer kinetics in photoanodes.In the present work,we designed a gradient Si-and Ti-doped Fe_(2)O_(3) homojunction photoanode to improve the photoelectrochemical(PEC)performance of a Ti-doped Fe_(2)O_(3) photoanode.Ti-FeOOH nanocorals were synthesized using a hydrothermal process,and Si-FeOOH was grown on Ti-FeOOH nanocorals using a rapid and facile microwaveassisted(MW)technique.By varying the MW irradiation time,the thickness of the Si/Ti:Fe_(2)O_(3) photoanode was adjusted and an optimized 3-Si/Ti:Fe_(2)O_(3) photoelectrode was achieved with a significantly enhanced photocurrent density(1.37 mA cm^(-2) at 1.23 V vs.RHE)and a cathodic shift of the onset potential(150 mV)compared with that of bare Ti-Fe_(2)O_(3).This enhanced PEC performance can be ascribed to homojunction formation and Si gradient doping.The Si dopant increased the donor concentration and the formation of a homojunction improved the intrinsic built-in electric field,thereby promoting charge separation and charge transfer.Furthermore,the as-formed homojunction passivated the surfacetrapping states,consequently improving the charge transfer efficiency(60%at 1.23 VRHE)at the photoanode/electrolyte interface.These findings could pave the way for the microwave-assisted fabrication of diverse efficient homojunction photoanodes for PEC water splitting applications.
基金supported by the National Natural Science Foundation of China(No.32071713)the Outstanding Youth Foundation Project of Heilongjiang Province of China(JQ2019C001)。
文摘The global commitment to pivoting to sustainable energy and products calls for technology development to utilize solar energy for hydrogen(H_(2))and value-added chemicals production by biomass photoreforming.Herein,a novel dual-functional marigold-like Zn_(x)Cd_(1-x)S homojunction has been the production of lactic acid with high-yield and H_(2)with high-efficiency by selective glucose photoreforming.The optimized Zn_(0.3)Cd_(0.7)S exhibits outstanding H_(2)generation(13.64 mmol h^(-1)g^(-1)),glucose conversion(96.40%),and lactic acid yield(76.80%),over 272.80 and 19.21 times higher than that of bare ZnS(0.05 mmol h^(-1)g^(-1))and CdS(0.71 mmol h^(-1)g^(-1))in H_(2)generation,respectively.The marigold-like morphology provides abundant active sites and sufficient substrates accessibility for the photocatalyst,while the specific role of the homojunction formed by hexagonal wurtzite(WZ)and cubic zinc blende(ZB)in photoreforming biomass has been demonstrated by density functional theory(DFT)calculations.Glucose is converted to lactic acid on the WZ surface of Zn_(0.3)Cd_(0.7)S via the photoactive species·O_(2)^(-),while the H_(2)is evolved from protons(H^(+))in H_(2)O on the ZB surface of Zn_(0.3)Cd_(0.7)S.This work paves a promising road for the production of sustainable energy and products by integrating photocatalysis and biorefine.
基金supported by National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Natural Science Foundation of China(LD19E020001)+1 种基金Zhejiang Provincial Key Research and Development Program(2021C01030)"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province(2021C01SA301612)。
文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
基金Financial support by National Natural Science Foundation of China(21706103 and U21A20311)Natural Science Foundation of Jiangsu Province(BK20170549)China Postdoctoral Science Foundation(2022M711381)。
文摘High-efficiency sodium-ion batteries(SIBs) are in great demand for energy storage applications,which are dominated by the Na+storage performance of electrode materials.Here,a one-pot solvothermal method is developed to construct amorphous/crystalline MoO_(2)(a/c-MoO_(2)) homojunction for boosting Na+storage.Theoretical simulations signify that electrons redistribute at the homogenous interface of a/c-MoO_(2),resulting in an inbuilt driving force to easily adsorb charge carriers and promote the electron/ion transfer ability.Relying on its crystallographic superiorities,the a/c-MoO_(2)homojunction with high Na adsorbability(-1.61 eV) and low Na diffusion energy barrier(0.519 eV) achieves higher capacity(307 mA h g^(-1)at 0.1 A/g),better rate capability and cycling stability than either a-MoO_(2)or c-MoO_(2)counterpart.Combining in-situ X-ray diffraction(XRD) and ex-situ X-ray photoelectron spectroscopy(XPS)techniques,the ’adsorption-insertion-conversion’ mechanism is well established for Na+storage of MoO_(2).Our work opens new opportunities to optimize electrode materials via crystallographic engineering for efficient Na+storage,and helps to better understand the effects of homojunction structure in enhanced electrochemical performance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61540071 and 11705016)Project of Natural Science Research of Higher Education in Jiangsu Province,China(Grant Nos.17KJB510001 and 17KJB140002)+1 种基金Changzhou Sci&Tech Program,China(Grant No.CJ20160026)Changzhou Institute of Technology Science Foundation,China(Grant No.YN1408)
文摘The adding of ZnMgO asymmetric double barriers （ADB） in p-ZnO2（Li, N）/n-ZnO homojunction affects the p-n junction device performance prominently. Two different homojunctions are fabricated on Si （100） substrates by pulsed laser deposition; one is the traditional p-ZnO2 （Li, N）/n-ZnO homojunction with different thicknesses named as S l （250 nm） and S2 （500 nm）, the other is the one with ADB embedded in the n-layer named as Q （265 nm）. From the photoluminescence spectra, defect luminescence present in the S-series devices is effectively limited in the Q device. The current-voltage curve of the Q device shows Zener-diode rectification property because the two-dimensional electron gas tunnels through the narrow ZnMgO barrier under a reverse bias, thus decreasing the working p-n homojunction thickness from 500 nm to 265 nm. The ADB-modified homojunction shows higher carrier mobility in the Q device. The electroluminescence of the ZnO homojunction is improved in Q compared to S2, because the holes in p-type ZnO （Li, N） can cross the wide ZnMgO barrier under a forward bias voltage into the ZnO quantum well. Therefore, electron-hole recombination occurs in the narrow bandgap of n-type ZnO, creating an ultraviolet light-emitting diode using the ZnO homojunction.
基金supported by the National Natu-ral Science Foundation of China(Nos.22078261,21676213,and 11974276)Natural Science Basic Research Program of Shaanxi(No.2023-JC-YB-115)+1 种基金Shaanxi Key Science and Technology Innovation Team Project(No.2022TD-33)National College Student Inno-vation and Entrepreneurship Training Program(No.202210697069)for the financial support of this work.
文摘Effective bulk phase and surface charge separation is critical for charge utilization during the photo-catalytic energy conversion process.In this work,the ternary Ni_(2)P-NiS/twinned Mn_(0.5)Cd_(0.5)S(T-MCS)nanohybrids were successfully constructed via combining Ni_(2)P-NiS with T-MCS solid solution for visible light photocatalytic H_(2)evolution.T-MCS is composed of zinc blende Mn_(0.5)Cd_(0.5)S(ZB-MCS)and wurtzite Mn_(0.5)Cd_(0.5)S(WZ-MCS)and those two alternatively arranged crystal phases endow T-MCS with excellent bulk phase charge separation performance for the slight energy level difference between ZB-MCS and WZ-MCS.S-scheme carriers transfer route between NiS and T-MCS can accelerate the interfacial charge separation and retain the active electrons and holes,meanwhile,co-catalyst Ni_(2)P as electron receiver and proton reduction center can further optimize the H_(2)evolution reaction kinetics based on the surface Schottky barrier effect.The above-formed homo-heterojunctions can establish multiple charge transfer channels in the bulk phase of T-MCS and interface of T-MCS and Ni_(2)P-NiS.Under the synergistic effect of twinned homojunction,S-scheme heterojunction,and Schottky barrier,the ternary Ni_(2)P-NiS/T-MCS com-posite manifested an H_(2)production rate of 122.5 mmol h^(-1)g^(-1),which was 1.33,1.24,and 2.58 times higher than those of the NiS/T-MCS(92.4 mmol h^(-1)g^(-1)),Ni_(2)P/T-MCS(98.4 mmol h^(-1)g^(-1)),and T-MCS(47.5 mmol h^(-1)g^(-1)),respectively.This work demonstrates a promising strategy to develop efficient sul-fides photocatalyst toward targeted solar-driven H_(2)evolution through homo-heterojunction engineering.
基金supported by Grants from the UK EPSRC Future Compound Semiconductor Manufacturing Hub(EP/P006973/1)the financial support from EPSRC(EP/L018330/1,EP/N032888/1)+3 种基金the U.S.Army Research Laboratory under Cooperative Agreement Number W911NF-16-2-0120the “973 Program—the National Basic Research Program of China” Special Funds for the Chief Young Scientis(2015CB358600)the Excellent Young Scholar Fund from National Natural Science Foundation of China(21422103)the China Scholarship Council(CSC)
文摘Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.
基金Project supported by the National Natural Science Foundation of China(Grant No.61705066)the Open Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Grant No.IPOC2018B004)the National Key Research and Development Program,China(Grant No.2016YFA0202401)
文摘Bi2O2Se thin film could be one of the promising material candidates for the next-generation electronic and optoelectronic applications. However, the performance of Bi2O2Se thin film-based device is not fully explored in the photodetecting area. Considering the fact that the electrical properties such as carrier mobility, work function, and energy band structure of Bi2O2Se are thickness-dependent, the in-plane Bi2O2Se homojunctions consisting of layers with different thicknesses are successfully synthesized by the chemical vapor deposition(CVD) method across the terraces on the mica substrates,where terraces are created in the mica surface layer peeling off process. In this way, effective internal electrical fields are built up along the Bi2O2Se homojunctions, exhibiting diode-like rectification behavior with an on/off ratio of 102, what is more, thus obtained photodetectors possess highly sensitive and ultrafast features, with a maximum photoresponsivity of 2.5 A/W and a lifetime of 4.8 μs. Comparing with the Bi2O2Se uniform thin films, the photo-electric conversion efficiency is greatly improved for the in-plane homojunctions.
基金supported by the National Natural Science Foundation of China (11374110, 51371085, 11304106)
文摘Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p–n homojunction ultraviolet detector(UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of -0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices.
基金financially supported by the National Key Research and Development Program of China (Grant No. 2017YFA0207500)the National Natural Science Foundation of China (Grant No. 62125404)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000)
文摘A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic devices.Here,we construct a two-dimensional(2D)Fe doped SnS_(2)(Fe-SnS_(2))homogeneous junction and investigate its electromagnetic transport feature.The Fe-SnS_(2) homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800%in the parallel magnetic field and 600%in the vertical magnetic field,indicating an obvi-ous anisotropic MR feature.In contrast,The MR of Fe-SnS_(2) homojunction is much larger than the pure diamagnetic SnS_(2) and most 2D materials.The application of a gate voltage can regulate the MR effect of Fe-SnS_(2) homojunction devices.Moreover,the stability of Fe-SnS_(2) in air has great application potential.Our Fe-SnS_(2) homojunction has a significant potential in future mag-netic memory applications.
基金supported by the National Natural Science Foundation of China(41702037,41831285 and 41872039)Project of State Key Laboratory of Environment-friendly Energy Materials,Southwest University of Science and Technology(18fksy0216)。
文摘The manipulation of the surface property of WO_(3) photoanode is the main breakthrough direction to improve its solar water oxidation performance both in thermodynamics and kinetics.Here,we report a WO_(3)(002)/m-WO_(3) homojunction film that is composed of an upper WO_(3) layer with predominant(002)facet(WO_(3)(002))and a lower WO_(3) layer with multi-crystal facets(m-WO_(3))as a photoanode for solar water oxidation.Due to the synergistic effect of WO_(3)(002)layer and m-WO_(3) layer,better water oxidation activity and stability are achieved on the WO_(3)(002)/m-WO_(3) homojunction film relative to the m-WO_(3) and WO_(3)(002)film.Specifically,the improved water oxidation performance on the WO_(3)(002)/m-WO_(3) homojunction film is attributed to the followings.In thermodynamics,the band position differences between WO_(3)(002)layer and m-WO_(3) layer lead to the formation of WO_(3)(002)/m-WO_(3) homojunction,which has positive function of improving their charge separation and transfer.In kinetics,the upper WO_(3)(002)layer of the WO_(3)(002)/m-WO_(3) film has superior activity in the adsorption and activation of water molecules,water oxidation on this homojunction film photoanode is inclined to follow the four-holes pathway,and the corrosion of photoanode from the H_(2)O_(2) intermediate is restrained.The present work provides a new strategy to modify the WO_(3) photoanodes for thermodynamically and kinetically efficient water oxidation.
基金This work was financially supported by the Opening Project of National Local Joint Laboratory for Advanced Textile Processing and Clean Production(FX2022006)Guiding Project of Natural Science Foundation of Hubei province(2022CFC072)+2 种基金Guiding Project of Scientific Research Plan of Education Department of Hubei Province(B2022081)Shenghong Key Scientific Research Project of Emergency Support and Public Safety Fiber Materials and Products(2022-rw0101)Science and Technology Guidance Program of China National Textile and Apparel Council(2022002).
文摘Firefighting protective clothing is a crucial protective equipment for firefighters to minimize skin burn and ensure safety firefighting operation and rescue mission.A recent increasing concern is to develop self-powered fire warning materials that can be incorporated into the firefighting clothing to achieve active fire protection for firefighters before the protective clothing catches fire on fireground.However,it is still a challenge to facilely design and manufacture thermoelectric(TE)textile(TET)-based fire warning electronics with dynamic surface conformability and breathability.Here,we develop an alternate coaxial wet-spinning strategy to continuously produce alternating p/n-type TE aerogel fibers involving n-type Ti_(3)C_(2)T_(x)MXene and p-type MXene/SWCNT-COOH as core materials,and tough aramid nanofiber as protective shell,which simultaneously ensure the flexibility and high-efficiency TE power generation.With such alternating p/n-type TE fibers,TET-based self-powered fire warning sensors with high mechanical stability and wearability are successfully fabricated through stitching the alternating p-n segment TE fibers into aramid fabric.The results indicate that TET-based fire warning electronics containing 50 p-n pairs produce the open-circuit voltage of 7.5 mV with a power density of 119.79 nW cm-2 at a temperature difference of 300℃.The output voltage signal is then calculated as corresponding surface temperature of firefighting clothing based on a linear relationship between TE voltage and temperature.The fire alarm response time and flame-retardant properties are further displayed.Such self-powered fire warning electronics are true textiles that offer breathability and compatibility with body movement,demonstrating their potential application in firefighting clothing.
基金Project supported by the National Natural Science Foundation of China(Grant No.11864011)the Youth Project of Scientific and Technological Research Program of Chongqing Education Commission,China(Grant Nos.KJQN202001207 and KJQN202101204)the Fund from the Educational Commission of Hubei Province,China(Grant No.T201914)。
文摘The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore,the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of[-0.3,-0.1] V/A and [0.1, 0.3] V/A and change into metal when the electric field intensity is equal to or higher than0.4 V/A. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices.
