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Photoluminescence Spectra of Disordered and Ordered Ga_(0.52)In_(0.48)P 被引量:1
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作者 LUYi-jun YURong-wen 《Semiconductor Photonics and Technology》 CAS 1999年第3期139-142,151,共5页
Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photolu... Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photoluminescence spectrum which is excitation-intensity independent and has different activation energy at different temperature region. The ordered sample shows double peaks, the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards. The relative phenomena are reasonably explained in terms of lattice ordering and orientation superlattice model. 展开更多
关键词 photoluminescence Semiconductor Materials spectra CLC number:O472.3 Document code:A
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The Photoluminescence Spectra of the Aeschynite Group Minerals
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作者 廖楚柯 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2001年第2期73-75,共3页
Raman and photoluminescence spectra of the metamict and annealing recrystallization titanoaeschynite-(Nd) and nioboaeschynite-(Ce), found in Baiyunobo mineral deposit in China, were measured and discussed. The peaks o... Raman and photoluminescence spectra of the metamict and annealing recrystallization titanoaeschynite-(Nd) and nioboaeschynite-(Ce), found in Baiyunobo mineral deposit in China, were measured and discussed. The peaks or bands in the spectra of the metamic minerals are weak, broad and diffuse, but sharpen notably after heating. The results show that the distortion of the structure and disorder state of the elements exists in the minerals when natural crystalline minerals transformed in-to metamict minerals after a long period of self-irradiation structure damaging. And all bands in the photoluminescence spectra of the aeschynite group mineral stem from emission transitions of Nd3+, when 514.5 nm laser is used as the excitation source. 展开更多
关键词 aeschynite group minerals Raman spectra photoluminescence spectra Nd3+
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Time-Resolved Photoluminescence Spectra of Porous Si
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作者 FEI Hao-sheng HAN Li +1 位作者 CHE Yan-long NIE Rui-juan and LI Tie-jin(Deparrment of Physics and Deparrment of Chemistry ,Jilin University , Changchun , 1 30023 ) 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 1995年第1期58-63,共6页
he photoluminescence spectra of porous Si have been studied. Its timere-solved luminescence spectra show a red shift of luminescencc peak with increasingdelay time after exciting and a nonexponential decay. Several sp... he photoluminescence spectra of porous Si have been studied. Its timere-solved luminescence spectra show a red shift of luminescencc peak with increasingdelay time after exciting and a nonexponential decay. Several spectral bands withdifferent Gaussian center appear by means of the decomposition of a spetrum. Theresuits of our experiments show quantum confined characters in porous Si, and wespeculate that the short wavelength band at 465 nm is the direct band froni P_(15) toP_(25) 展开更多
关键词 Porous Si Time-resolved spectra Nanocrystal photoluminescence
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Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source 被引量:1
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作者 K. B. Tynyshtykbaev V. B. Glazman +4 位作者 M. A. Yeleuov A. T. Isova B. A. Rakymetov D. Muratov S. Z.Tokmoldin 《Optics and Photonics Journal》 2013年第2期217-221,共5页
Photoluminescence spectra and nature of light-emitting centers of a porous silicon (por-Si) samples are given. The por- Si samples had high-ordered mosaic structure, which was received under long anodic etching p-Si(1... Photoluminescence spectra and nature of light-emitting centers of a porous silicon (por-Si) samples are given. The por- Si samples had high-ordered mosaic structure, which was received under long anodic etching p-Si(100) in electrolyte with an internal current source. The photoluminescence spectra were monitored at room temperature before and after annealing in air and vacuum. Comparative analysis of photoluminescence spectra of the por-Si samples annealed at different temperatures in air and vacuum shows that the thermal annealing conditions has significant effect on the intensity and spectral content of the photoluminescence spectra. The nature of the luminescence emission centers at different temperatures and annealing conditions was discussed. 展开更多
关键词 photoluminescence spectra Thermal Annealing Emitting Centershydrides Oxides Mosaic Structure NANOCRYSTALLITE Por-Si
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Fabrication and photoluminescence characteristics of nonuniform Yb-Er codoped films
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作者 李成仁 雷明凯 +2 位作者 李淑凤 刘玉凤 宋昌烈 《Journal of Rare Earths》 SCIE EI CAS CSCD 2008年第1期31-34,共4页
The nonuniform Yb-Er Codoped Al2O3 films were prepared on SiO2/Si substrates using a medium frequency magnetron sputtering system. Two asymmetry targets in the system were introduced to realize the nonuniform dopant. ... The nonuniform Yb-Er Codoped Al2O3 films were prepared on SiO2/Si substrates using a medium frequency magnetron sputtering system. Two asymmetry targets in the system were introduced to realize the nonuniform dopant. Some curves of Photoluminescence (PL) peak intensity were obtained by adjusting the deposition parameters, such as, the pillar number of erbium and ytterbium in the mixed target and the distance between a sample table and targets. Typically, the curve of PL peak intensity against the offset distance was approximately linear. The ratio of the PL intensity at the two ends of the same sample was 12.6 and the slope was 71.83/mm when the pillar numbers of the erbium and ytterbium in the mixed target are 5 and 60, respectively, and the distance between targets and the sample table is 2.9 cm. 展开更多
关键词 Yb-Er codoped nonuniform films the medium frequency magnetron sputtering system asymmetry targets photoluminescence spectra rare earths
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Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method
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作者 Ghfoor Muhammad Imran Murtaza +1 位作者 Rehan Abid Naeem Ahmad 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第5期657-665,共9页
We explore the photoluminescence properties of zinc silicate(Zn_(2)SiO_(4)) nanostructures synthesized by vapor-liquidsolid(VLS)mode of growth using three different catalysts(Sn,Ag,and Mn).Different catalysts signific... We explore the photoluminescence properties of zinc silicate(Zn_(2)SiO_(4)) nanostructures synthesized by vapor-liquidsolid(VLS)mode of growth using three different catalysts(Sn,Ag,and Mn).Different catalysts significantly influence the growth rate which in turn has an impact on the structure and hence the photoluminescence of the prepared zinc silicate nanostructures.Zn_(2)SiO_(4) has a wide bandgap of about 5.5 eV and in its pure form,it does not emit in visible region due to its inner shell electronic transitions between the 3 d5 energy levels.However,the incorporation of different catalysts(Sn,Ag and Mn)at different growth temperatures into the Zn_(2)SiO_(4) crystal growth kinetics provides wide visible spectral range of photoluminescence(PL)emissions.PL analysis shows broad multi-band spectrum in the visible region and distinct colors(red,yellow,green,blue,cyan and violet)are obtained depending on the crystalline structure of the prepared nanostructures.The allowed transitions due to the effect of different catalysts on zinc silicate lattice offer a huge cross-section of absorption that generates strong photoluminescence.The correlation between the structural and optical properties of the synthesized nanostructures is discussed in detail.The synthesized photoluminescent nanostructures have potential applications in solidstate lighting and display devices. 展开更多
关键词 NANOSTRUCTURES vapor-liquid-solid growth mode photoluminescence spectra fluorescence microscopy
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BaZnOS:Bi^(3+)荧光粉的制备及光学性能研究
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作者 罗娟 陈世碧 +5 位作者 李孝斌 郑小州 王昶 岳励 徐慢 戴武斌 《武汉工程大学学报》 CAS 2024年第2期162-166,共5页
以碳酸钡、硫化锌和氧化铋为原料,采用高温固相法合成了一系列铋(Bi)掺杂BaZnOS的蓝绿色荧光粉。研究了BaZnOS中Bi的位点占据、晶胞变化及其发光特性之间的相关性。在BaZnOS中,根据离子配位相同及半径相似原理,Ba位点是Bi最适合和稳定... 以碳酸钡、硫化锌和氧化铋为原料,采用高温固相法合成了一系列铋(Bi)掺杂BaZnOS的蓝绿色荧光粉。研究了BaZnOS中Bi的位点占据、晶胞变化及其发光特性之间的相关性。在BaZnOS中,根据离子配位相同及半径相似原理,Ba位点是Bi最适合和稳定占据的位点。由于Bi^(3+)的半径略小于Ba^(2+)的半径,导致掺杂过后的晶胞参数有所缩小。在波长为372 nm的紫外光激发下,BaZnOS和BaZnOS:Bi^(3+)在400~600 nm处都显示出非常宽的发射带。其中未掺杂的BaZnOS发光归因于合成过程中的氧空位缺陷,掺杂Bi^(3+)后,Bi^(3+)结合到BaZnOS的晶格中,由于Bi^(3+)的^(3)P_(1,0)→^(1)S_(0)跃迁,最终使位于400~600 nm处的光致发光进一步增强2~3倍。通过色坐标计算,所制备的BaZnOS:Bi^(3+)荧光粉色坐标均位于蓝绿色区域,可作为与红光协调发射白光的潜力荧光粉,用于白光发光二极管领域。 展开更多
关键词 四元硫氧化物 蓝绿色荧光粉 光致发光激发光谱 光致发光光谱 能级跃迁
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Solvent and Temperature Effects on Spectral Properties of Two Poly(3-alkyl)thiophene Derivatives
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作者 GAOChao WUHong-cai +2 位作者 YIWen-hui ZHANGQing-xue DONGFa-xin 《Semiconductor Photonics and Technology》 CAS 2005年第1期40-45,51,共7页
Two alkyl substituted polythiophene derivatives: poly(3-hexylthiophene)(P3HT) and poly(3-decylthiophene)(P3DT), have synthesized by oxidation coupling polymerization of 3-alkylthiophene using iron(III) chloride as cat... Two alkyl substituted polythiophene derivatives: poly(3-hexylthiophene)(P3HT) and poly(3-decylthiophene)(P3DT), have synthesized by oxidation coupling polymerization of 3-alkylthiophene using iron(III) chloride as catalyst in chloroform. While both polymers in pure chloroform solution have maximum absorption at approximately same wavelength of 440nm, they behave differently with respect to changes observed on their UV-visible and photoluminescence spectra when the quality of the poor solvent is changed in good solvent (chloroform) / poor solvent (methanol) mixtures. With increasing volume fraction of methanol in mixtures, the absorption spectra of P3HT and P3DT red-shift, peaking at maximum wavelength of 495nm (P3HT) and 510nm(P3DT). Furthermore, the absorption spectra of the two polymers in chloroform blue-shift as the temperature rises. P3HT shows 4.73nm blue-shifts at 50℃ in contrast to the case at 20℃, while P3DT blue-shifts about 5.04nm. The photoluminescence spectra of the two polymers in mixed solution are also investigated, which show that the luminescence spectra shift to longer wavelength with an accompanying drop in the PL intensity as methanol is increased. The absorption and emission spectra of the two polymers in a poor solvent and a thin film are similar, which indicate that a similar longer conjugation length in the two cases. It could conclude that the polymers exist almost the same conformations and aggregations in both a poor solvent and a thin film. P3DT exhibits more sensitive spectra properties (big red-shifts in both absorption and luminescence spectra in poor solvents and large blue-shifts at high temperature) with contrast to P3HT, which imply that long side alkyl may improve the chromic properties of the polymer. 展开更多
关键词 SOLVATOCHROMISM THERMOCHROMISM Poly(3-alkyl)thiophenes photoluminescence spectra
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多变量Si杂质诱导InGaAs/AlGaAs量子阱混杂研究
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作者 刘翠翠 林楠 +2 位作者 马骁宇 张月明 刘素平 《中国光学(中英文)》 EI CAS CSCD 北大核心 2023年第6期1512-1523,共12页
腔面光学灾变损伤是导致高功率量子阱半导体激光器阈值输出功率受限制的关键因素。通过量子阱混杂技术调整半导体激光器腔面局部区域处有源区材料的带隙宽度,形成对输出光透明的非吸收窗口,可提高激光器输出功率。本文基于InGaAs/AlGaA... 腔面光学灾变损伤是导致高功率量子阱半导体激光器阈值输出功率受限制的关键因素。通过量子阱混杂技术调整半导体激光器腔面局部区域处有源区材料的带隙宽度,形成对输出光透明的非吸收窗口,可提高激光器输出功率。本文基于InGaAs/AlGaAs高功率量子阱半导体激光器初级外延片,以外延Si单晶层作为扩散源,结合快速热退火方法开展了杂质诱导量子阱混杂研究。探索了介质层生长温度、介质层厚度、热处理温度、热处理时间等条件对混杂效果的影响。结果表明,50 nm的650℃低温外延Si介质层并结合875℃/90 s快速热退火处理可在保证光致发光谱的同时获得约57 nm的波长蓝移量。能谱测试发现,Si杂质扩散到初级外延片上的波导层是导致量子阱混杂效果显著的关键。 展开更多
关键词 半导体激光器 量子阱混杂 快速热退火 波长蓝移 光致发光谱
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基于InGaAs/GaAs量子阱结构的辐射标定因子实验研究
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作者 王伟 杨舒婷 +3 位作者 汪雅欣 王宇轩 王茹 于庆南 《发光学报》 EI CAS CSCD 北大核心 2023年第12期2258-2264,共7页
辐射标定因子作为半导体激光器的重要物理参数,在揭示器件性能方面一直扮演着重要角色。本文提出了一种测量辐射标定因子的实验方法,利用这一方法开展了对980 nm InGaAs/GaAs量子阱结构的辐射特性研究。该方法通过收集InGaAs/GaAs边发... 辐射标定因子作为半导体激光器的重要物理参数,在揭示器件性能方面一直扮演着重要角色。本文提出了一种测量辐射标定因子的实验方法,利用这一方法开展了对980 nm InGaAs/GaAs量子阱结构的辐射特性研究。该方法通过收集InGaAs/GaAs边发射结构两侧辐射的光致发光(PL)光谱,利用构建的理论公式,获得了该结构在不同注入载流子浓度下的辐射标定因子,均值波动范围约为7.16×10^(10)~3.36×10^(11)W^(-1)·eV^(-1)·s^(-1)。最后利用固体模型理论和载流子填充规律对该结果进行了分析,揭示了该结构在不同热平衡状态下的非平衡载流子能带填充水平,以及电子和空穴准费米能级的变化规律。该项研究提出了一种测量辐射标定因子的新方法,在揭示发光材料辐射机制和推动激光器发展方面具有较重要研究价值。 展开更多
关键词 INGAAS/GAAS 辐射标定因子 光致发光光谱 能带填充水平
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配合物Eu_xM_(1-x)(TTA)_3(H_2O)_2(M=La,Gd)光致发光特性 被引量:26
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作者 刘铭钊 杨展澜 +2 位作者 张莉 翁诗甫 吴瑾光 《物理化学学报》 SCIE CAS CSCD 北大核心 2001年第9期797-801,共5页
合成了一系列组成为Eu_xM_(1-x)(TTA)_3(H_2O)_2(M=La,Gd)的固体配合物,利用红外光谱和荧光光谱研究了配合物结构和发光性质随Eu^(3+)浓度的变化规律.红外光谱的结果表明,配合物的成份为Eu_xM_(1-x)(TTA)_3(H_2O)_2和M(TTA)_3(H_2O)_2... 合成了一系列组成为Eu_xM_(1-x)(TTA)_3(H_2O)_2(M=La,Gd)的固体配合物,利用红外光谱和荧光光谱研究了配合物结构和发光性质随Eu^(3+)浓度的变化规律.红外光谱的结果表明,配合物的成份为Eu_xM_(1-x)(TTA)_3(H_2O)_2和M(TTA)_3(H_2O)_2,没有新化合物生成.而荧光光谱的结果显示配合物的发光强度与Eu^(3+)浓度不成线性关系,其中不发光的M(TTA)_3组分对发光有增益作用.对其可能的发光机制进行了探讨. 展开更多
关键词 光致发光 配合物 红外光谱 荧光光谱 能量传递 稀土 TTA
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长链脂肪酸稀土络合体系的光致发光现象研究 被引量:4
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作者 李勇 张珂 +3 位作者 黄保贵 徐怡庄 高宏成 吴瑾光 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2002年第3期353-356,共4页
本文合成了两类长链脂肪酸和铕的二元配合物 ,进而以邻菲罗啉作为第二配体制得三元配合物 ,是很好的光致发光物质。元素分析及FTIR光谱初步确定了结构 ,分别为Eu(L1 ) 32H2 O ,Eu(L1 ) 3phen ,Eu(L2 ) 32H2 O ,Eu(L2 ) 3phen (L1 =月桂... 本文合成了两类长链脂肪酸和铕的二元配合物 ,进而以邻菲罗啉作为第二配体制得三元配合物 ,是很好的光致发光物质。元素分析及FTIR光谱初步确定了结构 ,分别为Eu(L1 ) 32H2 O ,Eu(L1 ) 3phen ,Eu(L2 ) 32H2 O ,Eu(L2 ) 3phen (L1 =月桂酸根、L2 =硬脂酸根 ) ,长链脂肪酸通过羧酸双齿螯合配位。运用紫外吸收光谱和荧光光谱进一步讨论其发光机理。通过TEM电镜研究了配合物掺杂在高分子中的形貌与颗粒大小等分布情况。 展开更多
关键词 长链脂肪酸 稀土络合体系 铕配合物 光致发光 荧光光谱 FTIR TEM 发光性质 紫外吸收光谱
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掺碳氮化镓的光学性质 被引量:3
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作者 叶建东 顾书林 +3 位作者 王立宗 张荣 施毅 郑有炓 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第7期717-721,共5页
利用喇曼光谱和光致发光谱 ,对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .结果发现C3H8流量的增加导致载流子浓度的升高 ,喇曼谱出现蓝移 ,E1(LO)声子的Raman强度变弱 .同时光致发光谱中蓝光带... 利用喇曼光谱和光致发光谱 ,对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .结果发现C3H8流量的增加导致载流子浓度的升高 ,喇曼谱出现蓝移 ,E1(LO)声子的Raman强度变弱 .同时光致发光谱中蓝光带和黄光带发光强度随着掺碳浓度的增加先增强后减弱 ,这与掺杂碳的自补偿效应有关 .高碳掺杂量的GaN材料的结构与光学性质均显著下降 . 展开更多
关键词 掺碳 氮化镓 光学性质 喇曼光谱 光致发光谱
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MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性(英文) 被引量:5
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作者 王玥 施卫 +3 位作者 苑进社 贺训军 胡辉 姬广举 《发光学报》 EI CAS CSCD 北大核心 2007年第3期407-411,共5页
研究了用金属有机物气相外延(MOVPE)法在蓝宝石衬底上生长的In组分浓度保持不变的InGaN/GaN单量子阱结构在室温下的发光特性和光吸收特性。实验结果表明,在InGaN厚度<3 nm时,随着样品InGaN势阱层宽度的增加(1 nm),光致发光(PL)谱的... 研究了用金属有机物气相外延(MOVPE)法在蓝宝石衬底上生长的In组分浓度保持不变的InGaN/GaN单量子阱结构在室温下的发光特性和光吸收特性。实验结果表明,在InGaN厚度<3 nm时,随着样品InGaN势阱层宽度的增加(1 nm),光致发光(PL)谱的发光峰值波长出现明显的红移33 nm现象,而且发光强度下降8%,谱线半峰全宽(FWHM)展宽,通过对样品的透射、反射光谱研究发现,量子阱层窄(1.5 nm)的样品在波长接近红外区时出现无吸收的现象,即R+T达到了100%,而在阱层较宽的样品中没有发现这一现象,对引起这些现象的原因进行了讨论。这些结果有助于开发和优化三族氮化物半导体光电器件的进一步研究工作。 展开更多
关键词 INGAN/GAN 单量子阱 光致发光 透射光谱 反射光谱
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化学氧化对多孔硅表面态和光致发光的影响 被引量:5
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作者 李经建 刁鹏 +3 位作者 蔡生民 侯永田 王昕 张树霖 《物理化学学报》 SCIE CAS CSCD 北大核心 1994年第8期737-740,共4页
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even ... The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn’t SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model. 展开更多
关键词 多孔硅 光致发光 化学氧化 表面态
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多孔氧化铝模板制备ZnS纳米线阵列及其光致发光谱 被引量:4
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作者 艾汉华 万淼 +2 位作者 任璐 段金霞 黄新堂 《发光学报》 EI CAS CSCD 北大核心 2005年第5期631-635,共5页
利用阳极氧化铝(AAO)模板,采用电化学沉积方法制备出了ZnS纳米线阵列。扫描电子显微镜(SEM)结果显示,AAO模板孔洞分布均匀,孔径基本一致(约50 nm),孔口呈六边形。TEM结果显示硫化锌纳米线的直径约50 nm(与AAM模板孔径一致),长度约为20... 利用阳极氧化铝(AAO)模板,采用电化学沉积方法制备出了ZnS纳米线阵列。扫描电子显微镜(SEM)结果显示,AAO模板孔洞分布均匀,孔径基本一致(约50 nm),孔口呈六边形。TEM结果显示硫化锌纳米线的直径约50 nm(与AAM模板孔径一致),长度约为20μm(与AAM模板厚度一致)。电子衍射结果表明ZnS纳米线为多晶结构。比较了AAO模板组装ZnS纳米线阵列前后的光致发光谱,所得光谱显示,组装了ZnS纳米线阵列的模板的光致发光谱比没有组装的空模板相比多出两个发射峰,分别位于409,430 nm,且其发光强度随激发波长的增长而增强。解谱分析表明,这即为ZnS纳米线阵列的发光光谱的两个发射峰,是由导带与受主能级间的跃迁发光和施主与受主能级间的复合跃迁发光共同作用所致。发现由于纳米线尺寸的单一性,发射峰窄化明显,半峰全宽较小,这种现象在其他文献中未曾报道过。 展开更多
关键词 AAO 硫化锌 纳米线 阵列 光致发光谱
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InAs/GaSbⅡ型超晶格的拉曼和光致发光光谱 被引量:4
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作者 郭杰 孙维国 +3 位作者 彭震宇 周志强 徐应强 牛智川 《红外与激光工程》 EI CSCD 北大核心 2009年第2期278-281,共4页
采用分子束外延(MBE)技术,在GaSb(100)衬底上外延生长晶体结构完整和表面平整的Ⅱ型超晶格InAs(1.2nm)/GaSb(2.4nm)。拉曼光谱表明:随着温度从70K升高至室温,由于热膨胀作用和光声子散射过程中的衰减,超晶格纵光学声子拉曼频移向低波数... 采用分子束外延(MBE)技术,在GaSb(100)衬底上外延生长晶体结构完整和表面平整的Ⅱ型超晶格InAs(1.2nm)/GaSb(2.4nm)。拉曼光谱表明:随着温度从70K升高至室温,由于热膨胀作用和光声子散射过程中的衰减,超晶格纵光学声子拉曼频移向低波数方向移动5cm-1,频移温度系数约为0.023cm-1/K。光致发光(PL)峰在2.4~2.8μm,由带间辐射复合和束缚激子复合构成,2.55μmPL峰随温度变化(15~150K)发生微小红移,超晶格中InAs电子带与GaSb空穴带带间距随温度变化比体材料的禁带宽度小。PL发光强度在15~50K随温度升高而升高,在60~150K则相反,并在不同温度段表现出不同的温度依赖关系。 展开更多
关键词 超晶格 INAS/GASB 拉曼光谱 光致发光 温度
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温度对CdSe/ZnS量子点吸收光谱和光致发光谱的影响 被引量:11
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作者 闫海珍 程成 张庆豪 《发光学报》 EI CAS CSCD 北大核心 2008年第1期166-170,共5页
测量了分散于正己烷溶液和甲苯溶液中的CdSe/ZnS量子点在室温到近溶液沸点温度间的吸收与光致发光光谱,比较了两种不同的CdSe/ZnS量子点的光谱特性,讨论了温度对吸收和光致发光光谱峰值波长以及相对强度的影响。结果表明:在25—10... 测量了分散于正己烷溶液和甲苯溶液中的CdSe/ZnS量子点在室温到近溶液沸点温度间的吸收与光致发光光谱,比较了两种不同的CdSe/ZnS量子点的光谱特性,讨论了温度对吸收和光致发光光谱峰值波长以及相对强度的影响。结果表明:在25—100℃范围内,CdSe/ZnS量子点激子吸收峰波长有微小红移,最大约为4nm;光致发光光谱峰值波长略有红移,但最大不超过6nm。根据光致发光光谱测量的结果,确定了Varshni定律中关于CdSe/ZnS量子点禁带宽度的两个经验参数:α=(2.0±0.2)×10^-4eV/K和β=(200±30)K。温度对CdSe/ZnS量子点吸收强度影响不大,荧光发射强度与温度呈线性关系增强。 展开更多
关键词 CdSe/ZnS点 溶液温度 吸收光谱 光致发光光谱
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1,3,4-噁二唑衍生物的合成与表征及吸电子基团对电子光谱的影响 被引量:6
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作者 朱万强 高智席 +2 位作者 周光明 唐国风 勾华 《西南师范大学学报(自然科学版)》 CAS CSCD 北大核心 2008年第4期43-47,共5页
合成和表征了一类苯环上含—CF_3基团的1,3,4-噁二唑类衍生物,研究了它们的紫外-可见吸收光谱、荧光光谱。结果显示,与不含—CF_3的噁二唑化合物相比,—CF_3加大了化合物的光学带宽,使它们的紫外吸收和荧光发射光谱都发生蓝移。
关键词 噁二唑衍生物 三氟甲基 紫外可见吸收光谱 荧光光谱
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CdS_xSe_(1-x)纳米微晶的辐射跃迁过程 被引量:2
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作者 孙聆东 赵家龙 +6 位作者 靳春明 窦恺 陈一民 黄世华 虞家琪 席淑珍 李磊 《发光学报》 EI CAS CSCD 北大核心 1996年第1期1-5,共5页
利用变温吸收光谱和光致发光光谱研究了CdSxSe(1-x)纳米微晶的辐射跃迁过程.由Varshni公式,拟合了微晶的吸收峰随温度的变化.根据变温发射光谱,研究了发光峰位置和温度的依赖关系,并分析了吸收峰和发光峰随温度... 利用变温吸收光谱和光致发光光谱研究了CdSxSe(1-x)纳米微晶的辐射跃迁过程.由Varshni公式,拟合了微晶的吸收峰随温度的变化.根据变温发射光谱,研究了发光峰位置和温度的依赖关系,并分析了吸收峰和发光峰随温度变化的快慢.对发光的动力学过程.作了简单的分析. 展开更多
关键词 吸收光谱 发射光谱 微晶玻璃 纳米 CdSSe
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