SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm

We improve the genetic algorithm by combining it with a simulated annealing algorithm. The improved algorithm is used to extract model parameters of SOI MOSFETs, which are fabricated with standard 1.2μm CMOS/SOI technology developed by the Institute of Microelectronics of the Chinese Academy of Sciences. The simulation results using this model are in excellent agreement with experimental results. The precision is improved noticeably compared to commercial software. This method requires neither a deeper understanding of SOl MOSFETs model nor more complex computations than conventional algorithms used by commercial software. Comprehensive verification shows that this model is applicable to a very large range of device sizes.

A Novel Technique of Parameter Extraction for Short Channel Length LDD MOSFETs

A novel parameter extraction technique suitable f or short channel length lightly-doped-drain (LDD) MOSFET's is proposed which seg ments the total gate bias range,and executes the linear regression in every subs ections,yielding the gate bias dependent parameters,such as effective channel le ngth,parasitic resistance,and mobility,etc.This method avoids the gate bias rang e optimization,and retains the accuracy and simplicity of linear regression.The extracted gate bias dependent parameters are implemented in the compact I-V model which has been proposed for deep submicron LDD MOSFET's.The good agreemen ts between simulations and measurements of the devices on 0.18μm CMOS technolo gy indicate the effectivity of this technique.

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Modeling and Parameter Extraction of VDMOSFET

A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction.

A novel physical parameter extraction approach for Schottky diodes

Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.

Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the I-V characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows： the ideality factor n, the series resistance Rs, the zero-field barrier height Фb0, the interface state density Dit, and the interracial layer capacitance Ci. It is found that the ideality factor n of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400℃. Depositing a very thin （-1 nm） heavily Ge-doped n＋ Ge intermediate layer can improve the NiGe film morphology significantly.

Bio-inspired optimization algorithms for optical parameter extraction of dielectric materials: A comparative study

Particle swarm optimization(PSO) and invasive weed optimization(IWO) algorithms are used for extracting the modeling parameters of materials useful for optics and photonics research community. These two bio-inspired algorithms are used here for the first time in this particular field to the best of our knowledge. The algorithms are used for modeling graphene oxide and the performances of the two are compared. Two objective functions are used for different boundary values. Root mean square(RMS) deviation is determined and compared.

Electrical Characterization of the through Via in Package-on-Package with Interposer using Parameter Extraction Method

This paper describes a method to extract electrical parameters of the through via in Package-on-Package(PoP)with interposer.Using the de-embedding technique electrical parameters of the through via are extracted.With the extracted electrical parameters of the through via,the effects of via height,the distance between signal and GND vias,and anti-pad clearance on the electrical characteristics are discussed.

An Improved Parasitic Parameter Extraction Method for InP HEMT

An improved parasitic parameter extraction method for InP high electron mobil-ity transistor(HEMT)is presented.Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal pa-rameter extraction.It is necessary to accurately determine and effectively eliminate the parasitic effect,so as to avoid the error propagation to the internal circuit parameters.In this paper,in order to obtain higher accuracy of parasitic parameters,parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters.The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-param-eters up to 40 GHz for InP HEMT.In 0.1-40 GHz InP HEMT,the average relative error of the optimization algorithm is about 9%higher than that of the analysis method,which verifies the validity of the parasitic parameter extraction method.The extraction of parasit-ic parameters not only provides a foundation for the high-precision extraction of small sig-nal intrinsic parameters of HEMT devices,but also lays a foundation for the high-preci-sion extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

A differential evolution approach for parameter extraction of solar cell from current-voltage characteristics

This letter presents an approach based on differential evolution （DE） algorithm for determining the solar cell model parameters from current-voltage （I - V） characteristics. The validity of this approach has been confirmed with experimental and simulated I - V data. It was demonstrated that the I - V curve derived from the parameters extracted by the DE approach is in good agreement with the experimental or simulated I - V data. A low objective function value as well as a high parameter precision can be obtained by the DE algorithm.

Analysis and parameter extraction of memristive structures based on Strukov's non-linear model

Diverse models have been proposed for explaining the electrical performance of memristive devices. In principle, the behavior of internal variables associated to each one could be extracted from experimental results. In a former work, thermally grown TiOmemristive structures were built and characterized to obtain the constitutive relationship(magnetic flux versus charge). The aim of this work is to continue that analysis by determining the microscopic parameters within the frame of a simple model. We use the already obtained memristance dependence of time and the basic expressions from the non-linear model proposed by Strukov et al. to compute the state-variable,the mobility of the doping species, the speed of the boundary between the doped and the undoped regions, the voltages and the electric fields on the distinct regions. The power dissipation and its time evolution are also presented. Moreover, a quite different window function from those formerly proposed, which was estimated from experimental data, is also determined. This information provides a straightforward picture of the ionic transport during one cycle of a square voltage waveform within the framework of this simple model. Finally, a quality factor is proposed as the key parameter for actual memristors viewed under the same model.

Diode parameter extraction by a linear cofactor difference operation method

The linear cofactor difference operator（LCDO） method,a direct parameter extraction method for general diodes,is presented.With the developed LCDO method,the extreme spectral characteristic of the diode voltage-current curves is revealed,and its extreme positions are related to the diode characteristic parameters directly.The method is applied to diodes with different sizes and temperatures,and the related characteristic parameters,such as reverse saturation current,series resistance and non-ideality factor,are extracted directly.The extraction result shows good agreement with the experimental data.

Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization

High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal ＂measurement data＂ with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.

Forward gated-diode method for parameter extraction of MOSFETs

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation （R-G） current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

MODEL ANALYSIS AND PARAMETER EXTRACTION FOR MOS CAPACITOR INCLUDING QUANTUM MECHANICAL EFFECTS

The high frequency CV curves of MOS capacitor have been studied. It is shown that semiclassical model is a good approximation to quantum model and approaches to classical model when the oxide layer is thick. This conclusion provides us an efficient （semiclassical） model including quantum mechanical effects to do parameter extraction for ultrathin oxide device. Here the effective extracting strategy is designed and numerical experiments demonstrate the validity of the strategy.

A Direct Parameter-Extraction Method for GaInP/GaAs Heterojunction Bipolar Transistors Small-Signal Model

An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is proposed for extraction of accessresistance and parasiticinductance. This method differs from previous ones by extracting the c-quivalent circuit parameterswithout using special test structure or global numerical optimization techniques. The mainadvantage of this method is that a unique and physically meaningful set of intrinsic parameters isextracted from impedance and admittance representation of the measured S-pa-rameters in thefrequency range of 1-12 GHz under different bias conditions. The method yields a deviation of lessthan 5% between measured and modeled S-parameters.

Small-signal model parameter extraction for AlGaN/GaN HEMT

A new 22-element small signal equivalent circuit model for the AlGaN/G N high electron mobility transistor（HEMT） is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions（G_（gsf） and G_（gdf）） are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate,stable and comparatively clear in physical significance.

Optimal Extraction of Photovoltaic Model Parameters Using Gravitational Search Algorithm Approach

Extraction of accurate Photo Voltaic (PV) model parameters is a challenging task for PV simulator developers. To mitigate this challenging task a novel approach using Gravitational Search Algorithm (GSA) for accurate extraction of PV model parameters is proposed in this paper. GSA is a population based heuristic optimization method which depends on the law of gravity and mass interactions. In this optimization method, the searcher agents are collection of masses which interact with each other using laws of gravity and motion of Newton. The developed PV model utilizes mathematical equations and is described through an equivalent circuit model comprising of a current source, a diode, a series resistor and a shunt resistor including the effect of changes in solar irradiation and ambient temperature. The optimal values of photo-current, diode ideality factor, series resistance and shunt resistance of the developed PV model are obtained by using GSA. The simulations of the characteristic curves of PV modules (SM55, ST36 and ST40) are carried out using MATLAB/Simulink environment. Results obtained using GSA are compared with Differential Evolution (DE), which shows that GSA based parameters are better optimal when compared to DE.

Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters

In this work,forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67)As Schottky diode were measured at temperature ranges from 100 to 300 K.The main parameters of this Schottky diode,such as the ideality factor,barrier height,series resistance and saturation current,have been extracted using both analytical and heuristics methods.Differential evolution(DE),particle swarm optimization(PSO)and artificial bee colony(ABC)have been chosen as candidate heuristics algorithms,while Cheung technic was selected as analytical extraction method.The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy,convergence speed and robustness.