For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive ...For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.展开更多
To deal with the universal problem of parasitical frequency spectrum in China New Generation Weather Radar transmitter, this paper establishes mathematical models for parasitical signals existing in radar transmitters...To deal with the universal problem of parasitical frequency spectrum in China New Generation Weather Radar transmitter, this paper establishes mathematical models for parasitical signals existing in radar transmitters and analyzes their effects on weather radar performance. Based on an engineering analysis of their possible sources, a step-by-step method to eliminate parasitical spec- trum is presented, which is applied to troubleshooting experimental weather radar. Eventually, parasitical spectrum is basically eliminated. As a result, improved spectrum purity and reduced phase noise is achieved. Moreover, accuracy for velocity estimate as well as ground clutter suppression ability of the radar system is enhanced.展开更多
High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-...High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.展开更多
固态半导体开关串联使用时要求均压和信号同步,导致固态半导体调制器的可靠性及稳定性降低.为解决该问题,对基于高变比脉冲变压器耦合全固态刚管调制器的设计原理、拓扑结构开展了研究.基于脉冲变压器等效电路模型,利用拉普拉斯变换法...固态半导体开关串联使用时要求均压和信号同步,导致固态半导体调制器的可靠性及稳定性降低.为解决该问题,对基于高变比脉冲变压器耦合全固态刚管调制器的设计原理、拓扑结构开展了研究.基于脉冲变压器等效电路模型,利用拉普拉斯变换法分析了脉冲变压器分布参数对输出波形的影响,并根据系统设计指标要求计算出过冲特征系数和上升时间系数,进而对脉冲变压器结构进行了优化设计.研究结果表明,输出波形的前沿与漏感和分布电容的乘积成正比,其过冲与漏感和分布电容的比值成正比;优化后脉冲变压器的变比从原来的1∶30提高到1∶70,其初级电压仅需1 k V即可达到设计要求,且保证了漏感和分布电容满足系统的需求.在此基础上研制的高变比脉冲变压器固态调制器在工作电压70 k V、负载阻抗1.4 kΩ、脉冲宽度100μs的条件下,实现输出脉冲前沿2.8μs、脉冲后沿2μs,达到系统设计要求,且在100 Hz满功率条件下实现长时间稳定运行.展开更多
基金supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2).
文摘For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.
基金supported by the National Natural Science Foundation of China (40975018)the Meteorological Observation Centre of China Meteorological Administration
文摘To deal with the universal problem of parasitical frequency spectrum in China New Generation Weather Radar transmitter, this paper establishes mathematical models for parasitical signals existing in radar transmitters and analyzes their effects on weather radar performance. Based on an engineering analysis of their possible sources, a step-by-step method to eliminate parasitical spec- trum is presented, which is applied to troubleshooting experimental weather radar. Eventually, parasitical spectrum is basically eliminated. As a result, improved spectrum purity and reduced phase noise is achieved. Moreover, accuracy for velocity estimate as well as ground clutter suppression ability of the radar system is enhanced.
基金Fok Ying Tung Education Foundation(No.91058)the Natural Science Foundation of High Education Institutions of Jiangsu Province(No.08KJD470004)Qing Lan Project of Jiangsu Province of 2008
文摘High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.
文摘固态半导体开关串联使用时要求均压和信号同步,导致固态半导体调制器的可靠性及稳定性降低.为解决该问题,对基于高变比脉冲变压器耦合全固态刚管调制器的设计原理、拓扑结构开展了研究.基于脉冲变压器等效电路模型,利用拉普拉斯变换法分析了脉冲变压器分布参数对输出波形的影响,并根据系统设计指标要求计算出过冲特征系数和上升时间系数,进而对脉冲变压器结构进行了优化设计.研究结果表明,输出波形的前沿与漏感和分布电容的乘积成正比,其过冲与漏感和分布电容的比值成正比;优化后脉冲变压器的变比从原来的1∶30提高到1∶70,其初级电压仅需1 k V即可达到设计要求,且保证了漏感和分布电容满足系统的需求.在此基础上研制的高变比脉冲变压器固态调制器在工作电压70 k V、负载阻抗1.4 kΩ、脉冲宽度100μs的条件下,实现输出脉冲前沿2.8μs、脉冲后沿2μs,达到系统设计要求,且在100 Hz满功率条件下实现长时间稳定运行.
