Propylamine hydrobromide passivated tin-based perovskites to efficient solar cells

The development of tin-based devices with low toxicity is critical for the commercial viability of perovskite solar cells.However because tin halide is a stronger Lewis acid,its crystallization rate is extremely fast,resulting in the formation of numerous defects that affect the device performance of tin-based perovskite solar cells.Herein,propylamine hydrobromide(PABr)was added to the perovskite precursor solution as an additive to passivate defects and fabricate more uniform and dense perovskite films.Because propylamine cations are too large to enter the perovskite lattices,they only exist at the grain boundary to passivate surface defects and promote crystal growth in a preferred orientation.The PABr additive raises the average short-circuit current density from 19.45 to 25.47 mA·cm^(-2)by reducing carrier recombination induced by defects.Furthermore,the device’s long-term illumination stability is improved after optimization,and the hysteresis effect is negligible.The addition of PABr results in a power conversion efficiency of 9.35%.

Spontaneous local redox reaction to passivate CNTs as lightweight current collector for high energy density lithium ion batteries

Extensive usage of highly conductive carbon materials with large specific surface area(e.g.,carbon nanotubes,CNTs)in lithium ion batteries(LIBs),especially as current collector of anodes,suffers from low initial coulombic efficiency(ICE),large interfacial resistance,and severe embrittlement,as the large specific surface area often results in severe interfacial decomposition of the electrolyte and the formation of thick and fluffy solid electrolyte interphase(SEI)during cycling of LIBs.Herein,we demonstrate that when the CNT-based current collector and Na foil(which are being stacked intimately upon each other)are being placed in Na+-based organic electrolyte,local redox reaction between the Na foil and the electrolyte would occur spontaneously,generating a thin and homogeneous NaF-based passivating layer on the CNTs.More importantly,we found that owing to the weak solvation behaviors of Na+in the organic electrolyte,the resulting passivation layer,which is rich in NaF,is thin and dense;when used as the anode current collector in LIBs,the pre-existing passivating layer can function effectively in isolating the anode from the solvated Li+,thus suppressing the formation of bulky SEI and the destructive intercalation of solvated Li+.The relevant half-cell(graphite as anode)exhibits a high ICE of 92.1%;the relevant pouch cell with thus passivated CNT film as current collectors for both electrodes(LiCoO_(2)as cathode,graphite as anode)displays a high energy density of 255 Wh kg^(-1),spelling an increase of 50%compared with that using the conventional metal current collectors.

Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules

Most thin-film photovoltaic modules are constructed on soda-lime glass(SLG)substrates containing alkali oxides,such as Na_(2)O.Na may diffuse from SLG into a module's active layers through P1 lines,an area between a module's constituent cells where the substrate-side charge transport layer(CTL)is in direct contact with SLG.Na diffusion from SLG is known to cause several important effects inⅡ-Ⅵand chalcogenide solar modules,but it has not been studied in perovskite solar modules(PSMs).In this work,we use complementary microscopy and spectroscopy techniques to show that Na diffusion occurs in the fabrication process of PSMs.Na diffuses vertically inside P1 lines and then laterally from P1 lines into the active area for up to 360 pm.We propose that this process is driven by the high temperatures the devices are exposed to during CTL and perovskite annealing.The diffused Na preferentially binds with Br,forming Br-poor,l-rich perovskite and a species rich in Na and Br(Na-Br)close to P1 lines.Na-Br passivates defect sites,reducing non-radiative recombination in the perovskite and boosting its luminescence by up to 5×.Na-Br is observed to be stable after 12 weeks of device storage,suggesting long-lasting effects of Na diffusion.Our results not only point to a potential avenue to increase PSM performance but also highlight the possibility of unabated Na diffusion throughout a module's lifetime,especially if accelerated by the electric field and elevated temperatures achievable during device operation.

Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology

Mono-crystalline silicon solar cells with a passivated emitter rear contact(PERC)configuration have attracted extensive attention from both industry and scientific communities.A record efficiency of 24.06%on p-type silicon wafer and mass production efficiency around 22%have been demonstrated,mainly due to its superior rear side passivation.In this work,the PERC solar cells with a p-type silicon wafer were numerically studied in terms of the surface passivation,quality of silicon wafer and metal electrodes.A rational way to achieve a 24%mass-production efficiency was proposed.Free energy loss analyses were adopted to address the loss sources with respect to the limit efficiency of 29%,which provides a guideline for the design and manufacture of a high-efficiency PERC solar cell.

Surface Leakage Currents in SiN and Al_2O_3 Passivated AlGaN/GaN High Electron Mobility Transistors

Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with AI2 03 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22eV for the high electric field, and the other trap level has a barrier height of 0.12eV for the low electric field.

Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiNx passivation located in the gate-drain region. As the thickness of SiNx passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.

TOOL DESIGN OF ELECTROCHEMICAL MACHINING WITH PASSIVATED ELECTROLYTE

Based on analysis of electrochemical machining ( ECM) process and application of finite ele- ment technique ( FET) , a method of tool design is presented which can be used in ECM with passivated electrolyte. As a result of specific treatment to boundary conditions, this method needs much less com- puting time and memory space. It has been shown that the theoretical results correspond well with the experimental ones .

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors （HEMTs） are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current IDsat, maximal transconductance gm, and the positive shift of threshold voltage VTH at high drain-source voltage VDS. The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEC depletion a little during the high-electric-field stress. After the hot carrier stress with VDS = 20 V and VGS= 0 V applied to the device for 104 sec, the SiN passivation decreases the stress-induced degradation of IDsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of IDsat, which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted.

Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer

In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.

Corrosion resistance of benzotriazole passivated Cu-Zn-Alshape memory alloy in artificial Ringer's solution

The corrosion resistance of the Cu-Zn-Al shape memory alloy passivated by benzotriazole was investigated by salt spraying test and electrochemical methods in artificial Ringer＇s solution. The results showed that after benzotriazole passivation, the corrosion resistance of the Cu-Zn-Al shape memory alloy was improved evidently. The anodic polarization current density of the passivated alloy decreased, the mass loss reduced, the anodic passivation accelerated, the anodic active dissolution was inhibited effectively, and the surface tarnishing was reswained. Infrared reflection spectrum test showed that Cu（Ⅰ）-benzotriazole or Cu（Ⅱ）-benzotriazole complex layer was formed on the surface of the Cu-Zn-Al shape memory alloy after passivation. This layer appeared plane, well adhesion, and presented homogeneous golden metallic luster. The corrosion resistance of the Cu-Zn-Al shape memory alloy passivated by benzotriazole is improved for the formation of an electrochemical stable baffle layer on passivated surface. This layer separates the metal substrate from the outside corrosion medium effectively and retards the corrosion process of dezincification.

Enhanced Photovoltaic Properties for Rear Passivated Crystalline Silicon Solar Cells by Fabricating Boron Doped Local Back Surface Field

In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field（B-LBSF） was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.

Luminescent Properties of Porous Si Passivated by Diamond Film and DLC Film

Surface passivation methods for porous Si (PS) surfaces, i.e., depositing diamond film or diamond-like carbon (DLC) film on PS surfaces, were attempted. Two emission bands, weak blue band and strong red band existed in the PL spectrum of diamond film coated on PS, were discovered by the photoluminescence measurements. The luminescent mechanism and stability were discussed. The results indicated that diamond film may stabilize the PL wavelength and intensity of PS, and therefore could become a promising passivation film of porous Si. The PL properties of PS coated by DLC films, including hydrogenated diamond like carbon (DLC:H) film and nitrogen doped DLC film (DLC:N) were also studied in this paper. The DLC films may stabilize the PL of PS, but the photoluminescent intensity was obviously weaker than that of diamond film coated PS.

Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs

Based on the transport theory and the polarization relaxation model,the effects of hydrogen and hydroxyl passivation on the conductivity and dielectric properties of silicon carbide nanowires(SiCNWs)with different sizes are numerically simulated.The results show that the variation trend of conductivity and band gap of passivated SiCNWs are opposite to the scenario of the size effect of bare SiCNWs.Among the influencing factors of conductivity,the carrier concentration plays a leading role.In the dielectric properties,the bare SiCNWs have a strong dielectric response in the blue light region,while passivated SiCNWs show a more obvious dielectric response in the far ultraviolet-light region.In particular,hydroxyl passivation produces a strong dielectric relaxation in the microwave band,indicating that hydroxyl passivated SiCNWs have a wide range of applications in electromagnetic absorption and shielding.

Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic(NH_4)_2S solution

Surface passivation with acidic （NH4）2S solution is shown to be effective in improving the interfacial and electrical properties of HfOE/GaSb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic （NH4）2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy.

Electrochemical Method for Evaluating the Passivated State of Medical StainlessSteel 317L

The electrochemical behavior of the medical Stainless steel 317L which is used as in vivo fixation materials has been investigated at different passivated states in several candidate-testing solutions. The potentiodynamic scanning polarizaion technique was employed to measure the polarizaion curves of 317L in 0.9%NaCl solution at 37℃. The results showed that the electrochemical behaviorin 0.9% NaCl solution at 37℃ and in 2% NaCl solotion at 30℃ can be better used to detect and evaluate passivated states and corrosionresistance of 317L. In addition,the pitting potential Eb can be used as a criterion and itS lower limit could be 0.85 V(SEC) for this system.

One-step calcination synthesis of interface-coherent crystallized and surface-passivated LiNi_(0.5)Mn_(1.5)O_(4) for high-voltage lithium-ion battery

LiNi_(0.5)Mn_(1.5)O_(4)(LNMO)with a spinel crystal structure presents a compelling avenue towards the development of economic cobalt-free and high voltage(~5 V)lithium-ion batteries.Nevertheless,the elevated operational voltage of LNMO gives rise to pronounced interfacial interactions between the distorted surface lattices characterized by Jahn-Teller(J-T)distortions and the electrolyte constituents.Herein,a localized crystallized coherent LaNiO_(3) and surface passivated Li_(3)PO_(4) layer is deposited on LNMO via a one-step calcination process.As evidenced by transmission electron microscopy(TEM),time-of-flight secondary ion mass spectrometry(ToF-SIMS)and density functional theory(DFT)calculation,the epitaxial growth of LaNiO_(3) along the LNMO lattice can effectively stabilize the structure and inhibit irreversible phase transitions,and the Li_(3)PO_(4) surface coating can prevent the chemical reaction between HF and transition metals without sacrificing the electrochemical activity.In addition,the ionic conductive Li_(3)PO_(4) and atomic wetting inter-layer enables fast charge transfer transport property.Consequently,the LNMO material enabled by the lattice bonding and surface passivating features,demonstrates high performance at high current densities and good capacity retention during long-term test.The rational design of interface coherent engineering and surface coating layers of the LNMO cathode material offers a new perspective for the practical application of high-voltage lithium-ion batteries.

Solution chemistry quasi-epitaxial growth of atomic CaTiO_(3)perovskite layers to stabilize and passivate TiO_(2)photoelectrodes for efficient water splitting

Perovskite oxides with unique crystal structures and high defect tolerance are promising as atomic surface passivation layers for photoelectrodes for efficient and stable water splitting.However,controllably depositing and crystalizing perovskite-type metal oxides at the atomic level remains challenging,as they usually crystalize at higher temperatures than regular metal oxides.Here,we report a mild solution chemistry approach for the quasi-epitaxial growth of an atomic CaTiO_(3)perovskite layer on rutile TiO_(2)nanorod arrays.The high-temperature crystallization of CaTiO_(3)perovskite is overcome by a sequential hydrothermal conversion of the atomic amorphous TiOx layer to CaTiO_(3)perovskite.The atomic quasi-epitaxial CaTiO_(3)layer passivated TiO_(2)nanorod arrays exhibit more efficient interface charge transfer and high photoelectrochemical performance for water splitting.Such a mild solution-based approach for the quasi-epitaxial growth of atomic metal oxide perovskite layers could be a promising strategy for both fabricating atomic perovskite layers and improving their photoelectrochemical properties.

5G-A时代物联网应用及策略研究

海量物联网通信是5G典型应用场景之一,为了实现蜂窝网的全场景物联能力,需要更多的场景化技术,5G-A引入了RedCap和Passive IoT。其中,RedCap降低了设备复杂性及成本,补充了5G中、高速率物联能力;Passive IoT实现了低成本无源物联。结合对物联产业的综合分析,重点论述基于RedCap和Pas-siveIoT的物联网构建方案、运营及优化。

Low-energy-consumption temperature swing system for CO_(2) capture by combining passive radiative cooling and solar heating

Temperature-swing adsorption(TSA)is an effective technique for CO_(2) capture,but the temperature swing procedure is energy-intensive.Herein,we report a low-energy-consumption system by combining passive radiative cooling and solar heating for the uptake of CO_(2) on commercial activated carbons(CACs).During adsorption,the adsorbents are coated with a layer of hierarchically porous poly(vinylidene fluoride-co-hexafluoropropene)[P(VdF-HFP)HP],which cools the adsorbents to a low temperature under sunlight through radiative cooling.For desorption,CACs with broad absorption of the solar spectrum are exposed to light irradiation for heating.The heating and cooling processes are completely driven by solar energy.Adsorption tests under mimicked sunlight using the CACs show that the performance of this system is comparable to that of the traditional ones.Furthermore,under real sunlight irradiation,the adsorption capacity of the CACs can be well maintained after multiple cycles.The present work may inspire the development of new temperature swing procedures with little energy consumption.

Train post‑derailment behaviours and containment methods:a review

Railway accidents,particularly serious derailments,can lead to catastrophic consequences.Therefore,it is essential to prevent derailment escalation to reduce the likelihood of severe derailments.Train post-derailment behaviours and containment methods play a critical role in preventing derailment escalation and providing passive safety protection and accident prevention in the event of a derailment.However,despite the increasing attention on this field from academia and industry in recent years,there is a lack of systematic exploration and summarization of emerging applications and containment methods in train post-derailment research.For this reason,this paper presents a comprehensive review of existing studies on train post-derailment behaviours,encompassing various topics such as post-derailment contact-impact models,dynamic modelling and simulation techniques,and the primary factors influencing post-derailment behaviours.Significantly,this review introduces and elucidates substitute guidance mechanisms(SGMs),which serve as railway-specific passive safety protection and accident prevention measures.The various types of SGMs are depicted,and their ongoing developments and applications are explored in depth.The review additionally points out several unresolved challenges including the adverse effects of SGMs,and proposes future research directions to advance the theoretical understanding and practical application of train post-derailment behaviours and containment methods.This review seeks to be a valuable reference for railway industry professionals in preventing catastrophic derailment consequences through post-derailment containment methods.