Preparation of High-Quality Poly-Si Films by a Solid Phase Crystallizing Method

A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 /μm for substrate temperature at 300 ℃ and annealed at 550℃ for 3 hours.

Infrared Nano-Imaging of Electronic Phase across the Metal–Insulator Transition of NdNiO_(3) Films

NdNiO_(3) is a typical correlated material with temperature-driven metal–insulator transition. Resolving the local electronic phase is crucial in understanding the driving mechanism behind the phase transition. Here we present a nano-infrared study of the metal–insulator transition in NdNiO_(3) films by a cryogenic scanning near-field optical microscope. The NdNiO_(3) films undergo a continuous transition without phase coexistence. The nano-infrared signal shows significant temperature dependence and a hysteresis loop. Stripe-like modulation of the optical conductivity is formed in the films and can be attributed to the epitaxial strain. These results provide valuable evidence to understand the coupled electronic and structural transformations in NdNiO_(3) films at the nano-scale.

Combined effect of the transition layer and interfacial coupling on the properties of ferroelectric bilayer film

Within the framework of modified Ginzburg Landau-Devonshire phenomenological theory, a ferroelectric bilayer film with a transition layer within each constituent film and an interfacial coupling between two materials has been studied. Properties including the Curie temperature and the spontaneous polarization of a bilayer film composed of two equally thick ferroelectric constituent films are discussed. The results show that the combined effect of the transition layer and the interracial coupling plays an important role in explaining the interesting behaviour of ferroelectric multilayer structures consisting of two ferroelectrie materials.

Preparation and modification of VO_2 thin film on R-sapphire substrate by rapid thermal process

The VO2 thin film with high performance of metal-insulator transition （MIT） is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process （RTP）. The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum （THz-TDS）. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, atomic force microscopy （AFM）, and search engine marketing （SEM） are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

X-ray diffraction study of effect of deposition conditions on α-β phase transition and stress evolution in sputter-deposited W coatings

Pure W and W-Cu-W trilayer coatings were deposited on an Fe substrate by d.c. magnetron sputtering. The α-β phase evolution, intragranular stress evolution in sputter-deposited W layer were investigated by x-ray diffraction. They are directly related to the film microstructure, density and adhesion. Therefore, control of the film stress and phase component transition is essential for its applications. The phase component transition from β-W to α-W and intragranular stress evolution from tensile to compressive strongly depend on the deposition parameters and can be induced by lowering Ar pressure and rising target power. The compressively stressed films with α-W phase have a dense microstructure and high adhesion to Fe substrate.

The model developed for stress-induced structural phase transformations of micro-crystalline silicon films

The nanoindentations were applied to island-shaped regions with metal-induced Si crystallizations. The experimental stress-strain relationship is obtained from the load-depth profile in order to investigate the critical stresses arising at various phase transitions. The stress and strain values at various indentation depths are applied to determine the Gibbs free energy at various phases. The intersections of the Gibbs free energy lines are used to determine the possible paths of phase transitions arising at various indentation depths. All the critical contact stresses corresponding to the various phase transitions at four annealing temperatures were found to be consistent with the experimental results.

Oscillatory Phase Behaviour as a Function of Film Thickness due to Confinement in fcc (100) A_(3)B Alloy Thin Films

The order-disorder phase transitions in fcc thin films are investigated by using the mean field method. The result shows that there is a significant difference in the phase transitions and surface segregation between the films of even-number and odd-number layers. There are various types of phase transitions involving several ordered phases with spatial variation for the film of even-number layers, while there is only one phase transition for the film of odd-number layers.

Extensive study of optical contrast between bulk and nanoscale transition metal dichalcogenide semiconductors

A remarkable refinement in the optical behavior of two-dimensional transition metal dichalcogenides(TMDs)has been brought to light when cleaved from their respective bulks.These atomically thin direct bandgap semiconductors are highly responsive to optical energy which proposes the route for futuristic photonic devices.In this manuscript,we have substantially focused on the optical study of MoS_(2)and WS_(2)nanosheets and comparative analysis with their bulk counterparts.The synthesis of nanosheets has been accomplished with liquid exfoliation followed by fabrication of thin films with drop-casting technique.X-ray diffraction and field emission scanning electron microscopy affirmed the morphology,whereas,UV-visible spectroscopy served as the primary tool for optical analysis.It was observed that several parameters,like optical conductivity,optical band-gap energy etc.have enhanced statistics in the case of exfoliated nanosheets as compared to their respective bulks.Some researchers have touched upon this analysis for MoS_(2),but it is completely novel for WS_(2).We expect our work to clearly distinguish between the optical behaviors of nanoscale and bulk TMDs so as to intensify and strengthen the research related to 2D-layered materials for optoelectronic and photovoltaic applications.

Low-temperature ferromagnetism in tensile-strained LaCoO_(2.5)thin film

The origin of ferromagnetism in epitaxial strained LaCoO_(3-x)films has long been controversial.Here,we investigated the magnetic behavior of a series of oxygen vacancy-ordered LaCoO_(3-x)films on different substrates.Obvious ferromagnetism was observed in perovskite LaCoO_(3)/LSAT(LSAT=(LaAlO_(3))0.3(SrAlTaO_(6))_(0.7))and LaCoO_(3)/SrTiO_(3) films,while LaCoO_(3)/LaAlO_(3)films showed weak ferromagnetic behavior.Meanwhile,LaCoO_(2.67) films exhibited antiferromagnetic behavior.An unexpected low-temperature ferromagnetic phenomenon with a Curie temperature of~83 K and a saturation magnetization of~1.2μB/Co was discovered in 15 nm thick LaCoO_(2.5)/LSAT thin films,which is probably related to the change in the interface CoO_(6) octahedron rotation pattern.Meanwhile,the observed ferromagnetism gradually disappeared as the thickness of the film increased,indicating a relaxation of tensile strain.Analysis suggests that the rotation and rhombohedral distortion of the CoO_(6) octahedron weakened the crystal field splitting and promoted the generation of the ordered high-spin state of Co^(2+).Thus the super-exchange effect between Co^(2+)(high spin state),Co^(2+)(low spin state)and Co^(2+)(high spin state)produced a low-temperature ferromagnetic behavior.However,compressive-strained LaCoO_(2.5)film on a LaAlO_(3)substrate showed normal anti-ferromagnetic behavior.These results demonstrate that both oxygen vacancies and tensile strain are correlated with the emergent magnetic properties in epitaxial LaCoO_(3-x)films and provide a new perspective to regulate the magnetic properties of transition oxide thin films.

VO_(2)薄膜材料的变温光学性质及1550 nm激光防护性能研究

具有半导体-金属态相变性质的二氧化钒材料可用于光电探测器的激光致盲防护。本文报道了基于磁控溅射法制备二氧化钒薄膜材料的结构、形貌特性,以及在不同温度下的光学性质。使用椭偏光谱法测量了20~100℃下可见-近红外波段二氧化钒材料的椭偏参数,利用Gaussian、Lorentz模型获取了薄膜在相变前的光学性质,结合Drude模型拟合获取了材料在相变后的光学特性,获取了材料在300~1700 nm之间的变温折射率和消光系数等参数。变功率下1550 nm红外激光透射率的实验测试研究表明,VO_(2)薄膜样品的相变阈值功率为12 W/cm^(2),相变前后透射率由51%减小到15%~17%,开关率为69%。

高雷诺数下洗涤冷却管内垂直环状降膜流动传热

为了研究高雷诺数(R_(e)=1.81×10^(4)~4.23×10^(4))下洗涤冷却管内降液膜的传热特性与机理,对管内液膜厚度分布与传热过程进行模拟计算。研究结果表明,槽缝宽度与液膜Re越大,液膜越厚;液相出口温度随壁面温度而上升,最大传热系数约为3.7×10^(3)W·(m^(2)·K)^(-1);传热系数随进口温度上升而下降,最大传热系数约为8.3×10^(3)·W(m^(2)·K)^(-1);液膜Re的增加使传热系数上升,最大传热系数约为9.4×10^(3)W·(m^(2)·K)^(-1);表征传热系数h+与液膜Re近似于正比例关系;通过研究气液两相传热发现,传热过程在液膜入口段0~0.1 m处最剧烈;传热系数随气相温度上升而先升高后降低,最大传热系数约为899 W×(m^(2)·K)^(-1);计算数据与试验关联式的最小误差约在10%之内。

纳米氧化锌液相法制备技术进展

纳米氧化锌是一种新型无机功能材料,广泛用于橡胶、涂料、催化等领域。其液相法制备技术具有产物粒径及形貌易控制、经济成本低、易于实现工业化的优点。重点综述了包括微乳液法、溶胶-凝胶法、水热/溶剂热法和化学沉淀法在内的纳米氧化锌液相法制备技术,阐释了各方法的基本原理、关键影响因素,强调了过程强化技术在制备过程中的重要作用。进一步介绍了“气泡液膜法”的新思路,其特征在于通过表面活性剂与反应液、空气的快速混合,形成具有高堆密度微气泡的纳米反应环境,成核晶体在气泡间10~100 nm的液膜内限域生长,通过控制气泡间液膜厚度调控纳米粒子大小,所得产物粒径均一、不易团聚,有望实现低成本纳米氧化锌的连续规模化生产。

高含量β相PVDF薄膜的制备技术及相形成机理研究进展

压电材料广泛应用于滤波器、微位移器、驱动器和传感器等电子器件中,在卫星广播、电子设备、生物以及航空航天等高新技术领域也有着重要的地位。压电材料主要分为单晶体压电材料、多晶体压电材料、高分子压电材料和聚合物-压电陶瓷复合材料。其中高分子压电材料如PVDF具有良好的柔韧性、优异的热电和铁电性能,从而受到学者的广泛关注。本文对溶液浇铸、静电纺丝和拉伸这三种制备高含量β相PVDF的工艺方法进行了总结,指出了工艺种类和工艺参数对β相生成的影响,探讨了不同加工工艺下相转变的机理,并对高含量β相PVDF薄膜制备技术、相形成机理及PVDF薄膜的应用发展趋势进行了展望。

Stability of the Liquid-Vapor Interface under the Combined Influence of Normal Vibrations and an Electric Field

The regime of horizontal subcooled film boiling is characterized by the formation of a thin layer of vapor coveringthe surface of a flat horizontal heater. Based on the equations of motion of a viscous incompressible fluid and theequation of heat transfer, the stability of such a vapor film is investigated. The influence of the modulation of thegravity field caused by vertical vibrations of the heater of finite frequency, as well as a constant electric fieldapplied normal to the surface of the heater, is taken into account. It is shown that in the case of a thick vaporfilm, the phase transition has a little effect on the thresholds for the occurrence of parametric instability in thesystem and its transformation into the most dangerous one. At the same time, the electric field contributes toan increase in these thresholds. It was found that the effect of vibrations on the stabilization of non-parametricinstability in the system is possible only in a narrow region of the parameter space where long-wave damped disturbances exist and consists of reducing the critical heat flux of stabilization. A vapor film stabilized in this waycan be destroyed due to the development of parametric instability. In contrast to the case of a thick vapor layer,the threshold for the onset of parametric instability for thin films largely depends on the value of subcooling in thesystem. In addition, this threshold decreases with increasing electric field strength. For a vapor film ten micronsthick, the instability threshold can be reduced by a factor of three or more by applying an electric field of aboutthree million volts per meter.

管束排列方式对LNG冷能发电中间介质气化器丙烷管外凝结影响分析

以LNG冷能发电装置中的中间介质气化器中冷凝器丙烷管外凝结过程为研究对象,建立相应数值模型,采用VOF模型追踪气液相界面,利用LEE模型作为相变传热传质模型,对管外气态丙烷凝结成液膜流动及凝结传热问题进行了瞬态二维CFD模拟。分析了不同管束排列方式下冷凝器丙烷端管外液膜流动和凝结换热特性,并对管外平均换热系数的模拟值进行了相应的计算。此外,还分析了壁面过冷度对丙烷冷凝相变过程的影响,发现在壁面过冷度较大时,顺排和叉排结构中最底排管道处皆出现了气体回流现象,导致最底排的管道最先出现液滴。

高导热石墨烯高分子相变材料的研究进展

分析了以石墨烯为导热填料的高分子相变材料的应用,介绍了包括共混法、自组装法、冷冻干燥法、碳泡沫法及金属泡沫法在内的高导热石墨烯高分子相变材料的制备方法,并对其导热性的影响因素进行了分析和总结。同时,介绍了通过各制备方法制备石墨烯高分子相变材料的研究进展与其面临的挑战,最后对各制备方法的优缺点进行了总结与展望。

钨镍共掺杂V_(2)O_(5)薄膜的光电特性研究

利用溶胶–凝胶旋涂法和后退火工艺在FTO导电玻璃上制备了钨镍共掺杂V_(2)O_(5)薄膜,研究了薄膜在不同温度和不同偏压下的光电特性和相变特性。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱仪(XPS)测试了钨镍共掺杂V_(2)O_(5)薄膜的晶体结构、表面形貌和组分,分析了不同钨镍共掺杂浓度对V_(2)O_(5)薄膜相变光电特性的影响。结果表明,当钨和镍的掺杂质量分数分别为3%和1.5%时,钨镍共掺杂的V_(2)O_(5)薄膜的相变温度为218.5℃,在可见光范围内有较高的透过率,在近红外1310 nm波长处的光学透过率达48.83%,与未掺杂V_(2)O_(5)薄膜的光学透过率相比提高了10.29%,薄膜电阻降低了30.53%,热致回线宽度收窄为15℃,说明钨镍共掺杂的V_(2)O_(5)薄膜具有良好的可逆相变光电特性,有望在新型光电器件领域得到较好的应用。

TiO_2 thin film photocatalyst

It is well known that the photocatalytic activity of TiO_2 thin filmsstrongly depends on the preparing methods and post-treatment conditions, since they have a decisiveinfluence on the chemical and physical properties of TiO_2 thin films. Therefore, it is necessary toelucidate the influence of the preparation process and post-treatment conditions on thephoto-catalytic activity and surface microstructures of the films. This review deals with thepreparation of TiO_2 thin film photo-catalysts by wet-chemical methods (such as sol-gel,-reversemicellar and liquid phase deposition) and the comparison of various preparation methods as well astheir advantage and disadvantage. Furthermore, it is discussed that the advancement ofphotocatalytic activity, super-hydrophilicity and bactericidal activity of TiO_2 thin filmphotocatalyst in recent years.

Laser Protection with VO_2 Film

This paper presents the principle,properties,advantage and disadvantage,associated problems and trend of laser protection with VO 2 film for infrared detectors in the range of 3～5μm and 8～12μm regions and suggests VO 2 film is a potential protection material for infrared detectors.

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.