The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps intro...The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.展开更多
Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650℃for 30 min was conducted to...Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650℃for 30 min was conducted to electrically activate the implanted P~＋ ions.Ni contacts to the P~＋-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted（0001）.The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30×10^（-6）Ω·cm^2 was obtained for the P~＋-implanted 4H-SiC layers.TheρC values of the Ni-based implanted layers decreased with increasing P doping concentrations,and a weaker temperature dependence was observed for different samples in the 200-500K temperature range.展开更多
基金Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04)the Fund of SOI Research and Development Center(No.20106250XXX)
文摘The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.
文摘Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650℃for 30 min was conducted to electrically activate the implanted P~＋ ions.Ni contacts to the P~＋-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted（0001）.The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30×10^（-6）Ω·cm^2 was obtained for the P~＋-implanted 4H-SiC layers.TheρC values of the Ni-based implanted layers decreased with increasing P doping concentrations,and a weaker temperature dependence was observed for different samples in the 200-500K temperature range.
