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Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation 被引量:2
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作者 李蕾蕾 周昕杰 +1 位作者 于宗光 封晴 《Journal of Semiconductors》 EI CAS CSCD 2015年第1期82-85,共4页
The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator(SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps intro... The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator(SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices. 展开更多
关键词 back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect
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Nickel ohmic contacts of high-concentration P-implanted 4H-SiC
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作者 刘春娟 刘肃 +1 位作者 冯晶晶 吴蓉 《Journal of Semiconductors》 EI CAS CSCD 2012年第3期118-121,共4页
Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650℃for 30 min was conducted to... Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated.AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650℃for 30 min was conducted to electrically activate the implanted P~+ ions.Ni contacts to the P~+-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted(0001).The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30×10^(-6)Ω·cm^2 was obtained for the P~+-implanted 4H-SiC layers.TheρC values of the Ni-based implanted layers decreased with increasing P doping concentrations,and a weaker temperature dependence was observed for different samples in the 200-500K temperature range. 展开更多
关键词 ohmic contacts phosphorus ion implantation contact resistance Hall concentration silicon carbide
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