给出了高倍增 SI-Ga As光电导开关中在临界光能、电场阈值触发条件下的瞬态光激发电荷畴现象的实验结果 ,进一步讨论了生成畴的光、电阈值条件 ,提出用类似于耿畴的单电荷畴的物理模型来描述高倍增 Ga As光电导开关中的 L ock-on效应。...给出了高倍增 SI-Ga As光电导开关中在临界光能、电场阈值触发条件下的瞬态光激发电荷畴现象的实验结果 ,进一步讨论了生成畴的光、电阈值条件 ,提出用类似于耿畴的单电荷畴的物理模型来描述高倍增 Ga As光电导开关中的 L ock-on效应。分析了单电荷畴的形成和辐射发光的物理过程 ,并对 L展开更多
Semi-insulating gallium arsenide （GaAs） photoconductive semiconductor switches （PCSS） have great potential for high voltage switching application, however, the utility is restricted by surface flashover which wouI...Semi-insulating gallium arsenide （GaAs） photoconductive semiconductor switches （PCSS） have great potential for high voltage switching application, however, the utility is restricted by surface flashover which wouId result in breakdown. In this paper, a model of photo-activated charge wave was proposed based on the theory of photo-activated charge domain （PACD） in GaAs PCSS, and moderate suppression of PACD formation by loading the semiconductor surface with dielectric material was investigated theoretically and experimentally. Current as high as 3.7 kA was obtained at 28 kV, implying that this method can effectively inhibit the surface flashover and improve the service life of DC charged GaAs PCSS.展开更多
The micro-genetic algorithm (MGA) optimization combined with the finite-difference time-domain (FDTD) method is applied to design a band-notched ultra wide-band (UWB) antenna. A U-type slot on a stepped U-type UWB mon...The micro-genetic algorithm (MGA) optimization combined with the finite-difference time-domain (FDTD) method is applied to design a band-notched ultra wide-band (UWB) antenna. A U-type slot on a stepped U-type UWB monopole is used to obtain the band-notched characteristic for 5 GHz wireless local area network (WLAN) band. The measured results show that voltage standing wave ration (VSWR) less than 2 covers 3.1-10.6 GHz operating band and VSWR more than 2 is within 5.150-5.825 GHz notched one with the highest value of 5.6. Agreement among the calculated, HFSS simulated and measured results validates the effiectiveness of this MGA-FDTD method, which is efficient for UWB antennas design.展开更多
Experiments with the limited space-charge accumulation（LSA） mode of oscillation in a large gap semiinsulating （SI） GaAs photoconductive semiconductor switch（PCSS） are discussed.It has been observed that growth a...Experiments with the limited space-charge accumulation（LSA） mode of oscillation in a large gap semiinsulating （SI） GaAs photoconductive semiconductor switch（PCSS） are discussed.It has been observed that growth and drift of a photo-activated charge domain（PACD） are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage.展开更多
基金supported by the Key Project of National Natural Science Foundation of China(No.50837005)the National Science Foundation of China(Nos.10876026,51107099)+3 种基金the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment (No.EIPE09203)the Natural Science Foundation of Shaanxi Province(No.2010JM7003)the Scientific Research Program Funded by Shaanxi Provincial Education Department(No.11JK0540)the Foundation for Outstanding Doctoral Dissertation of Xi'an University of Technology(105-210904)
文摘Semi-insulating gallium arsenide （GaAs） photoconductive semiconductor switches （PCSS） have great potential for high voltage switching application, however, the utility is restricted by surface flashover which wouId result in breakdown. In this paper, a model of photo-activated charge wave was proposed based on the theory of photo-activated charge domain （PACD） in GaAs PCSS, and moderate suppression of PACD formation by loading the semiconductor surface with dielectric material was investigated theoretically and experimentally. Current as high as 3.7 kA was obtained at 28 kV, implying that this method can effectively inhibit the surface flashover and improve the service life of DC charged GaAs PCSS.
基金supported by the Shanghai Leading Academic Discipline Project (Grant No.S30108)
文摘The micro-genetic algorithm (MGA) optimization combined with the finite-difference time-domain (FDTD) method is applied to design a band-notched ultra wide-band (UWB) antenna. A U-type slot on a stepped U-type UWB monopole is used to obtain the band-notched characteristic for 5 GHz wireless local area network (WLAN) band. The measured results show that voltage standing wave ration (VSWR) less than 2 covers 3.1-10.6 GHz operating band and VSWR more than 2 is within 5.150-5.825 GHz notched one with the highest value of 5.6. Agreement among the calculated, HFSS simulated and measured results validates the effiectiveness of this MGA-FDTD method, which is efficient for UWB antennas design.
基金Project supported by the National Natural Science Foundation of China(Nos.50837005,11204264)the Research Fund for Doctors of Xinjiang Normal University(No.XJNUBS 1220)the Research Fund for the Outstanding Young Teacher of Xinjiang Normal University (No.XJNU1214)
文摘Experiments with the limited space-charge accumulation（LSA） mode of oscillation in a large gap semiinsulating （SI） GaAs photoconductive semiconductor switch（PCSS） are discussed.It has been observed that growth and drift of a photo-activated charge domain（PACD） are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage.
