Temporal Characteristics of GaAs NEA and Alkali Metal Photocathodes

The temporal characteristics of GaAs NEA and alkali metal photocathodes are studied using Monte Carlo simulation method. The electron transit time and its distribution functions in the photocathodes are calculated. Based on the results, the time modulation transfer functions and temporal resolutions of the photocathodes are obtained. The results show that the response time and temporal resolution of alkali metal photocathode is in femitosecond order and those of GaAs NEA photocathode are in picosecond order.

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current, and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode. We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode. Our results support the double dipolar mode] for the explanation of the negative electron affinity effect.

Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy

The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420μA/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy （MBE） growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1×10^19 cm-3 to 1×1018 cm-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition,by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaA1As causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.

Development of Preparation Systems with K_2CsSb Photocathodes and Study on the Preparation Process

The next generation of advanced light sources requires photons with large average flux and high brightness,which needs advanced electron gun matched with excellent photocathode materials. K_2CsSb photocathode has the advantages of high quantum efficiency, long lifetime and instantaneous response. This study introduces the design of a set of K_2CsSb photocathode preparation systems and detailed preparation process of K_2CsSb photocathodes, including sequential deposition process and co-deposition process, and finally develops a K_2CsSb photocathode. The influence of laser power on the quantum efficiency is also investigated.

Recent progress and perspectives on Sb_(2)Se_(3)-based photocathodes for solar hydrogen production via photoelectrochemical water splitting

Photoelectrochemical(PEC) cells involved with semiconductor electrodes can simultaneously absorb solar energy and perform chemical reactions, which are considered as an attractive strategy to produce renewable and clean hydrogen energy. Sb_(2)Se_(3) has been widely investigated in constructing PEC photocathodes benefitting of its low toxicity, suitable band gap, superior optoelectronic properties, and outstanding photocorrosion stability. We first present a brief overview of basic concepts and principles of PEC water splitting as well as a comparison between Sb_(2)Se_(3) and other numerous candidates. Then the material characteristics and preparation methods of Sb_(2)Se_(3) are introduced. The development of Sb_(2)Se_(3)-based photocathodes in PEC water splitting with various architectures and engineering efforts(i.e., absorber engineering, interfaces engineering, co-catalyst engineering and tandem engineering) to improve solar-to-hydrogen(STH) efficiency are highlighted. Finally, we debate the possible future directions to further explore the researching fields of Sb_(2)Se_(3)-based photocathodes with a strongly positive outlook in PEC processed solar hydrogen production.

Improvement of photoemission performance of a gradient-doping transmission-mode GaAs photocathode

Two types of transmission-mode GaAs photocathodes grown by molecular beam epitaxy are compared in terms of activation process and spectral response, one has a gradient-doping structure and the other has a uniform-doping structure. The experimental results show that the gradient-doping photocathode can obtain a higher photoemission capability than the uniform-doping one. As a result of the downward graded band-bending structure, the cathode performance parameters, such as the electron average diffusion length and the surface electron escape probability obtained by fitting quantum yield curves, are greater for the gradient-doping photocathode. The electron diffusion length is within a range of from 2.0 to 5.4μm for doping concentration varying from 10^19 to 10^18 cm^-3 and the electron average diffusion length of the gradient-doping photocathode achieves 3.2 μm.

Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode

The resolution characteristic can be obtained by the modulation transfer function （MTF） of a GaAs/GaA1As photocathode. After establishing the theoretical model of GaAs（100）-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers, this paper calculates the trajectories of photoelectrons in a photocathode. Thus the distribution of photoelectron spots on the emit-face is obtained, which is namely the point spread function. The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function. The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length, and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration. Furthermore, the resolution is enhanced considerably by increasing the active-layer thickness, especially at high spatial frequencies. The best spatial resolution is 860 lp/mm, for the GaAs photocathode of doping concentration 1 ×10^19 cm 3 electron diffusion length 3.6 μm and the active-layer thickness 2 μm, under the 633-nm light irradiated. This research will contribute to the future improvement of the cathode＇s resolution for preparing a high performance GaAs photocathode, and improve the resolution of a low light level image intensifier.

Comparison of blue–green response between transmission-mode GaAsP-and GaAs-based photocathodes grown by molecular beam epitaxy

In order to develop the photodetector for effective blue-green response, the 18-mm-diameter vacuum image tube combined with the transmission-mode Alo.7Gao.3Aso.9Po.1/GaAso.9Po.1 photocathode grown by molecular beam epitaxy is tentatively fabricated. A comparison of photoelectric property, spectral characteristic and performance parameter be- tween the transmission-mode GaAsP-based and blue-extended GaAs-based photocathodes shows that the GaAsP-based photocathode possesses better absorption and higher quantum efficiency in the blue-green waveband, combined with a larger surface electron escape probability. Especially, the quantum efficiency at 532 nm for the GaAsP-based photocathode achieves as high as 59%, nearly twice that for the blue-extended GaAs-based one, which would be more conducive to the underwater range-gated imaging based on laser illumination. Moreover, the simulation results show that the favorable blue-green response can be achieved by optimizing the emission-layer thickness in a range of 0.4 μm-0.6 μm.

Constructions and Preliminary HV Conditioning of a Photocathode Direct-Current Electron Gun at IHEP

As one of the most important key technologies for future advanced light source based on the energy recovery linac, a photocathode dc electron gun is supported by Institute of High Energy Physics （IHEP） to address the technical challenges of producing very low ernittance beams at high average current. Construction of the dc gun is completed and a preliminary high voltage conditioning is carried out up to 440 k V. The design, construction and preliminary HV conditioning results for the dc gun are described.

Influence of varied doping structure on photoemissive property of photocathode

The built-in electric fields within a varied doping GaAs photocathode may promote the transport of electrons from the bulk to the surface, thus the quantum efficiency of the cathode can be enhanced remarkably. But this enhancement, which might be due to the increase in either the number or the energy of electrons reaching the surface, is not clear at present. In this paper, the energy distributions of electrons in a varied doping photocathode and uniform doping photocathode before and after escaping from the cathode surface are analysed, and the number of electrons escaping from the surface in different cases is calculated for the two kinds of photocathodes. The results indicate that the varied doping structure can not only increase the number of electrons reaching the surface but also cause an offset of the electron energy distribution to high energy. That is the root reason for the enhancement of the quantum efficiency of a varied doping GaAs photocathode.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage （SPV） curve before activation and the spectral response curve （SRC） after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability （SEP） can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes

In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.

A theoretical and experimental evaluation of Ⅲ–nitride solar-blind UV photocathode

We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.

High performance n^+p-Si/Ti/NiS_xO_y photocathode for photoelectrochemical hydrogen evolution in alkaline solution

Silicon, as a promising semiconductor for fabricating photocathode toward photoelectrochemical hydrogen evolution reaction(PEC-HER), should be improved in light harvesting ability and catalytic kinetics to obtain high PEC performance. Herein, a novel amorphous Nickel Oxysulfide(NiS_xO_y) film is effectively integrated with a Ti protected n^+p-Si micropyramid photocathode by the electrodeposition method. The fabricated n^+p-Si/Ti/Ni SxOyphotocathode exhibits excellent PEC-HER performance with an onset potential of 0.5 V(at J =-0.1 mA/cm^2), a photocurrent density of-26 mA/cm^2 at 0 V vs. RHE, and long term stability of six hours in alkaline solution(pH ≈ 14). The synergy of unique n^+p-Si micropyramid architectures(omnidirectional broadband light harvesting ability), novel amorphous NiS_xO_y catalyst(high HER electrocatalytic activity and good optical transparency) results in the high performance of n^+pSi/Ti/Ni S_xO_y. This work offers a novel strategy for effectively integrating electrocatalysts with semiconductor to design efficient photoelectrode toward PEC water splitting.

Analytical model and simulation of the Schottky effect on a cryocooled bialkali photocathode

A bialkali photocathode with the quantum efficiency(QE) in the range of a few percent was fabricated for the 704 MHz SRF gun at Brookhaven National Laboratory. The photoemission properties of the bialkali photocathode in the superconducting radio frequency(SRF)gun were measured for the first time, and a good beam experiment result was obtained. The performance of the bialkali photocathode was investigated during the commissioning process of the 704 MHz SRF gun. The effect of electric field on the QE of the cryo-cooled cathode was characterized by an analytical model and a code for the first time.

RESEARCH ON OPTICAL METHOD OF MONITORING PHOTOCATHODE PROCESS

The principle of an optical method of photocathode processing control, which is one ofphotocathode processing monitoring techniques, is discussed. A designed monitoring apparatus is describedand has been applied to investigate the optical parameters of multialkali photoemitter during the process offabrication. Some actual schemes using the method to monitor the preparation of photocathodεs are sug-gested.

Photoemission of graded-doping GaN photocathode

We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10^17 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

A transmission-mode GaAs photocathode includes four layers of glass, Si3N4, Gal-xAlxAs and GaAs. A gradientdoping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spectrophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition, a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error, meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 73. The presence of glass layer roughness, layer interface effects and surface oxides is interpreted on the modification.

Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure:Model and simulation

To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure,a general theoretical temporal response model is deduced by combining the unsteady continuity equation and numerical calculation method.Through the model,the contribution of the distribution Bragg reflec-tion structure and graded-bandgap emission layer to the temporal response are investigated.Meanwhile,the relationships between the temporal response characteristics of the laminated GaAs-based photocathode and different structural parame-ters are also analyzed,including average electron decay time,emission layer thickness,and incident light wavelength.It is found that the introduction of distribution Bragg reflection(DBR)layer solves the discrepancy between the absorption capability of the emission layer and the temporal response.Moreover,the distributed Bragg reflection layer can improve the time response by optimizing the initial photoelectron distribution.The improvement effect of the DBR layer on the temporal response is enhanced with the emission layer thickness decreasing or the incident light wavelength increasing.These results explain the effect of the DBR layer of the photocathode on the dynamic characteristics,which can offer a new insight into the dynamic research of GaAs-based photocathode.

In-situ multi-information measurement system for preparing gallium nitride photocathode

We introduce the first domestic in-situ multi-information measurement system for a gallium nitride （GaN） photo- cathode. This system can successfully fulfill heat cleaning and activation for GaN in an ultrahigh vacuum environment and produce a GaN photocathode with a negative electron affinity （NEA） status. Information including the heat clean- ing temperature, vacuum degree, photocurrent, electric current of cesium source, oxygen source, and the most important information about the spectral response, or equivalently, the quantum efficiency （QE） can be obtained during prepa- ration. The preparation of a GaN photocathode with this system indicates that the optimal heating temperature in a vacuum is about 700 ~C. We also develop a method of quickly evaluating the atomically clean surface with the vacuum degree versus wavelength curve to prevent possible secondary contamination when the atomic level cleaning surface is tested with X-ray photoelectron spectroscopy. The photocurrent shows a quick enhancement when the current ratio between the cesium source and oxygen source is 1.025. The spectral response of the GaN photocathode is flat in a wavelength range from 240 nm to 365 nm, and an abrupt decline is observed at 365 nm, which demonstrates that with the in-si$u multi-information measurement system the NEA GaN photocathode can be successfully prepared.