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Terahertz generation from Si3N4 covered photoconductive dipole antenna 被引量:8
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作者 施卫 Jingzhou Xu X.-C. Zhang 《Chinese Optics Letters》 SCIE EI CAS CSCD 2003年第5期308-310,共3页
We observe enhanced terahertz (THz) radiation generated from a Si3N4 film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the... We observe enhanced terahertz (THz) radiation generated from a Si3N4 film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si3N4 film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si3N4 film-coated layer. 展开更多
关键词 PDA THZ Terahertz generation from Si3N4 covered photoconductive dipole antenna from SI
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