Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance f...Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.展开更多
Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on th...Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on theα-Ga_(2)O_(3)nanorod array.Successfully,the PGF photodetector shows solar-blind UV/visible dual-band photodetection.Our device possesses comparable solar-blind UV responsivity(0.18 mA/W at 235 nm)and much faster response speed(0.102 s)than most of the reported self-poweredα-Ga_(2)O_(3)nanorod array solar-blind UV photodetectors.And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm.The response time is also much faster than the other non-self-poweredβ-Ga_(2)O_(3)DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga_(2)O_(3)heterojunction.The results herein may prove a promising way to realize fast-speed self-poweredα-Ga_(2)O_(3)photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking,imaging,machine vision and communication.展开更多
Spectrally-selective photodetection plays a crucial role in various applications,including target imaging and environmental monitoring.Traditional deep-ultraviolet(DUV)narrowband photodetection systems consist of broa...Spectrally-selective photodetection plays a crucial role in various applications,including target imaging and environmental monitoring.Traditional deep-ultraviolet(DUV)narrowband photodetection systems consist of broadband photodetectors and filters,which complicates the architecture and constrains imaging quality.Here,we introduce an electronic-grade diamond single-crystal photodetector exhibiting an exceptionally narrow spectral response in the DUV range with a full width at half maximum of 8 nm.By examining diamond photodetectors with varying dislocation densities,we propose that mitigating the defect-induced trapping effect to achieve charge collection narrowing,assisted by free exciton radiative recombination,is an effective strategy for narrowband photodetection.The superior performance of this device is evidenced through the imaging of DUV light sources,showcasing its capability to differentiate between distinct light sources and monitor human-safe sterilization systems.Our findings underscore the promising potential applications of electronicgrade diamond in narrowband photodetection and offer a valuable technique for identifying electronic-grade diamond.展开更多
As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions decl...As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.展开更多
By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing contin...By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing continuum photodetection process.展开更多
Using a stimulated parametric down-conversion process combined with a conventional detector, we theoretically propose a scheme to realize the stimulated emission-based detector, and investigate the antinormalty ordere...Using a stimulated parametric down-conversion process combined with a conventional detector, we theoretically propose a scheme to realize the stimulated emission-based detector, and investigate the antinormalty ordered correlation function and Fano factor for the coherent field based on it. Such a detection has advantages over the normally ordered one especially when the intensity of the field is weak.展开更多
Metal oxide mesocrystals are the alignment of metal oxide nanoparticles building blocks into the ordered superstructure,which have potentially tunable optical,electronic,and electrical properties suitable for practica...Metal oxide mesocrystals are the alignment of metal oxide nanoparticles building blocks into the ordered superstructure,which have potentially tunable optical,electronic,and electrical properties suitable for practical applications.Herein,we report an effective method for synthesizing mesocrystal zinc oxide nanorods(ZnONRs).The crystal,surface,and internal structures of the zinc oxide mesocrystals were fully characterized.Mesocrystal zinc oxide nanorods/reduced graphene oxide(ZnONRs/rGO)nanocomposite superstructure were synthesized also using the hydrothermal method.The crystal,surface,chemical,and internal structures of the ZnONRs/rGO nanocomposite superstructure were also fully characterized.The optical absorption coefficient,bandgap energy,band structure,and electrical conductivity of the ZnONRs/rGO nanocomposite superstructure were investigated to understand its optoelectronic and electrical properties.Finally,the photoconductivity of the ZnONRs/rGO nanocomposite superstructure was explored to find the possibilities of using this nanocomposite superstructure for ultraviolet(UV)photodetection applications.Finally,we concluded that the ZnONRs/rGO nanocomposite superstructure has high UV sensitivity and is suitable for UV detector applications.展开更多
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only d...The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.展开更多
文摘Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.
基金Project supported by the National Natural Science Foundation of China(Grant No.61705155)。
文摘Theα-Ga2 O_(3)nanorod array is grown on FTO by hydrothermal and annealing processes.And a self-powered PEDOT:PSS/α-Ga_(2)O_(3)nanorod array/FTO(PGF)photodetector has been demonstrated by spin coating PEDOT:PSS on theα-Ga_(2)O_(3)nanorod array.Successfully,the PGF photodetector shows solar-blind UV/visible dual-band photodetection.Our device possesses comparable solar-blind UV responsivity(0.18 mA/W at 235 nm)and much faster response speed(0.102 s)than most of the reported self-poweredα-Ga_(2)O_(3)nanorod array solar-blind UV photodetectors.And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm.The response time is also much faster than the other non-self-poweredβ-Ga_(2)O_(3)DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga_(2)O_(3)heterojunction.The results herein may prove a promising way to realize fast-speed self-poweredα-Ga_(2)O_(3)photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking,imaging,machine vision and communication.
基金supports from Natural Science Foundation of Guangdong Province for Distinguished Young Scholars(Grant No.2021B1515020105).
文摘Spectrally-selective photodetection plays a crucial role in various applications,including target imaging and environmental monitoring.Traditional deep-ultraviolet(DUV)narrowband photodetection systems consist of broadband photodetectors and filters,which complicates the architecture and constrains imaging quality.Here,we introduce an electronic-grade diamond single-crystal photodetector exhibiting an exceptionally narrow spectral response in the DUV range with a full width at half maximum of 8 nm.By examining diamond photodetectors with varying dislocation densities,we propose that mitigating the defect-induced trapping effect to achieve charge collection narrowing,assisted by free exciton radiative recombination,is an effective strategy for narrowband photodetection.The superior performance of this device is evidenced through the imaging of DUV light sources,showcasing its capability to differentiate between distinct light sources and monitor human-safe sterilization systems.Our findings underscore the promising potential applications of electronicgrade diamond in narrowband photodetection and offer a valuable technique for identifying electronic-grade diamond.
基金Project supported by the Ministry of Science and Technology of China(Grant No.2018YFA0305800)the National Natural Science Foundation of China(Grant No.61888102)the Chinese Academy of Sciences(Grant Nos.ZDBSSSW-WHC001,XDB33030100,XDB30000000,and YSBR-003)。
文摘As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.
基金supported by President Foundation of Chinese Academy of Sciencesthe National Natural Science Foundation of China (Grant Nos 10775097 and 10874174)
文摘By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing continuum photodetection process.
基金Project supported in part by the National Natural Science Foundation of China (Grant Nos. 10774096 and 60708010)the National Basic Research Program of China (Grant No. 2006CB921101)the Research Fund for the Returned Overseas Chinese Scholars of Shanxi Province,China (Grant No. 200713)
文摘Using a stimulated parametric down-conversion process combined with a conventional detector, we theoretically propose a scheme to realize the stimulated emission-based detector, and investigate the antinormalty ordered correlation function and Fano factor for the coherent field based on it. Such a detection has advantages over the normally ordered one especially when the intensity of the field is weak.
文摘Metal oxide mesocrystals are the alignment of metal oxide nanoparticles building blocks into the ordered superstructure,which have potentially tunable optical,electronic,and electrical properties suitable for practical applications.Herein,we report an effective method for synthesizing mesocrystal zinc oxide nanorods(ZnONRs).The crystal,surface,and internal structures of the zinc oxide mesocrystals were fully characterized.Mesocrystal zinc oxide nanorods/reduced graphene oxide(ZnONRs/rGO)nanocomposite superstructure were synthesized also using the hydrothermal method.The crystal,surface,chemical,and internal structures of the ZnONRs/rGO nanocomposite superstructure were also fully characterized.The optical absorption coefficient,bandgap energy,band structure,and electrical conductivity of the ZnONRs/rGO nanocomposite superstructure were investigated to understand its optoelectronic and electrical properties.Finally,the photoconductivity of the ZnONRs/rGO nanocomposite superstructure was explored to find the possibilities of using this nanocomposite superstructure for ultraviolet(UV)photodetection applications.Finally,we concluded that the ZnONRs/rGO nanocomposite superstructure has high UV sensitivity and is suitable for UV detector applications.
基金supported by the National Key R&D Program of China(2017YFE0131900)the Natural Science Foundation of Chongqing,China(CSTB2023NSCQ-LZX0087)the National Natural Science Foundation of China(62204242,62005182).
文摘The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.
