The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectros...The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.展开更多
Focus on the tracking target for detection indoor,the angle peak characteristics are analyzed based on uniform circular motion and the void-zone is proposed.The sine angular trajectory is used to transform the actual ...Focus on the tracking target for detection indoor,the angle peak characteristics are analyzed based on uniform circular motion and the void-zone is proposed.The sine angular trajectory is used to transform the actual target into the infield,which improves the value adaptability of the peak angular acceleration to velocity and accommodates the mobility condition of photoelectric turntable.Fight trajectory is generated by a tri-axial optical target and the tracking experiment is carried out by theodolite to realize the physical simulation of trajectory,which provides powerful conditions for evaluating the tracking performance of photoelectric turntable under the mobility index.展开更多
基金Founded by the National Key Research and Development Program(No.2021YFB3802400)the National Natural Science Foundation of China(No.52161037)the Basic Research Project of Yunnan Province(No.202001AU070112)。
文摘The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.
基金supported by the Innovation Project Funding of Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Science(No.061X20C060)。
文摘Focus on the tracking target for detection indoor,the angle peak characteristics are analyzed based on uniform circular motion and the void-zone is proposed.The sine angular trajectory is used to transform the actual target into the infield,which improves the value adaptability of the peak angular acceleration to velocity and accommodates the mobility condition of photoelectric turntable.Fight trajectory is generated by a tri-axial optical target and the tracking experiment is carried out by theodolite to realize the physical simulation of trajectory,which provides powerful conditions for evaluating the tracking performance of photoelectric turntable under the mobility index.
