Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface a...Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl3) at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.展开更多
A new type homogeneous planar PC (photoelectric converter) on the basis of multijunction semiconductor n+-p-p+-n+-p-p+-...-n+-p-p+ structure has been investigated. The entire structure is a cascade PC consisti...A new type homogeneous planar PC (photoelectric converter) on the basis of multijunction semiconductor n+-p-p+-n+-p-p+-...-n+-p-p+ structure has been investigated. The entire structure is a cascade PC consisting of a number of elements of the structure--single PCs connected in series and illuminated by light that has consistently passed through the previous semiconductor layers. The theory of converter of both monochromatic and solar radiation has been developed and the limiting values of their photoelectric and power characteristics have been determined, including the optimal thickness and number of single PCs layered on a base PC, their spectral sensitivity, current-voltage characteristics and efficiency. The open-circuit voltage grows practically linearly with the number of elements in the cascade. The top efficiency limit for a certain optimal elements number reaches its maximum that exceeds considerably that of the base PC, especially in the range of low collecting coefficient of charge carriers in the base PC.展开更多
In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and ...In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and characterized by photoluminescence spectra(PL),x-ray diffraction(XRD),and x-ray photoelectron spectroscopy(XPS).With PCBM layers,the current–voltage hysteresis phenomenon is effetely inhibited,and both the transfer and output current values increase.The band energy diagrams are proposed,which indicate that the electrons are transferred into the PCBM layer,resulting in the increase of photocurrent.The electron mobility and hole mobility are extracted from the transfer curves,which are about one order of magnitude as large as those of PCBM deposited,which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites,and the effects of ionized impurity scattering on carrier transport become smaller.展开更多
A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by num...A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.展开更多
The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that a...The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that after the photodiodes being irradiated,the photocurrent decreases,especially for short wavelength of light. The dark current of the photodiodes with smaller active area decreases while increases for that with larger active area,and the response time shortens. The plane scanning experiment of laser beam indicates that the homogeneity of the device's surface is not influenced by the irradiation. The results prove that PIN photodiode shows relatively good radioresistance.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.50972144)
文摘Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl3) at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
文摘A new type homogeneous planar PC (photoelectric converter) on the basis of multijunction semiconductor n+-p-p+-n+-p-p+-...-n+-p-p+ structure has been investigated. The entire structure is a cascade PC consisting of a number of elements of the structure--single PCs connected in series and illuminated by light that has consistently passed through the previous semiconductor layers. The theory of converter of both monochromatic and solar radiation has been developed and the limiting values of their photoelectric and power characteristics have been determined, including the optimal thickness and number of single PCs layered on a base PC, their spectral sensitivity, current-voltage characteristics and efficiency. The open-circuit voltage grows practically linearly with the number of elements in the cascade. The top efficiency limit for a certain optimal elements number reaches its maximum that exceeds considerably that of the base PC, especially in the range of low collecting coefficient of charge carriers in the base PC.
基金Project supported by the National Natural Science Foundation of China(Grant No.51602241)the China Postdoctoral Science Foundation(Grant No.2016M592754)
文摘In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and characterized by photoluminescence spectra(PL),x-ray diffraction(XRD),and x-ray photoelectron spectroscopy(XPS).With PCBM layers,the current–voltage hysteresis phenomenon is effetely inhibited,and both the transfer and output current values increase.The band energy diagrams are proposed,which indicate that the electrons are transferred into the PCBM layer,resulting in the increase of photocurrent.The electron mobility and hole mobility are extracted from the transfer curves,which are about one order of magnitude as large as those of PCBM deposited,which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites,and the effects of ionized impurity scattering on carrier transport become smaller.
基金Projects(61233010,61274043)supported by the National Natural Science Foundation of ChinaProject(NCET-11-0975)supported by the Program for New Century Excellent Talents in University,China
文摘A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.
文摘The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that after the photodiodes being irradiated,the photocurrent decreases,especially for short wavelength of light. The dark current of the photodiodes with smaller active area decreases while increases for that with larger active area,and the response time shortens. The plane scanning experiment of laser beam indicates that the homogeneity of the device's surface is not influenced by the irradiation. The results prove that PIN photodiode shows relatively good radioresistance.