The photoelectrochemical behavior of polyaniline(PAn)film was studied in aqueous electrolyte solution containing Fe(CN)_6^(3-)/Fe(CN)_+^(4-) redox couple.It was found that PAn films possess the properties of p-type se...The photoelectrochemical behavior of polyaniline(PAn)film was studied in aqueous electrolyte solution containing Fe(CN)_6^(3-)/Fe(CN)_+^(4-) redox couple.It was found that PAn films possess the properties of p-type semiconducter and a cathodic photocurrent as high as 700μA/cm^2 was observed when irradiated under polychromatic light of 100mW/cm^2.展开更多
n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n- In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkably increased the fill factor.The maximu...n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n- In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkably increased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm^2 at an applied potential of+1.2V.XPS and Auger analysis were carried out for examining surface and bulk concentration.The photoetching effect could be satisfactorily explained.展开更多
基金Project supported by National Natural Science Foundation of China.
文摘The photoelectrochemical behavior of polyaniline(PAn)film was studied in aqueous electrolyte solution containing Fe(CN)_6^(3-)/Fe(CN)_+^(4-) redox couple.It was found that PAn films possess the properties of p-type semiconducter and a cathodic photocurrent as high as 700μA/cm^2 was observed when irradiated under polychromatic light of 100mW/cm^2.
基金the National Natural Science Foundation of China.
文摘n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n- In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkably increased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm^2 at an applied potential of+1.2V.XPS and Auger analysis were carried out for examining surface and bulk concentration.The photoetching effect could be satisfactorily explained.
