Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO_2/Pt structure in the application of resistive random access memory（RRAM）.The conduction mechanism of the structure is characterized ...Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO_2/Pt structure in the application of resistive random access memory（RRAM）.The conduction mechanism of the structure is characterized to be SCLC conduction.The dependence of resistances in both high resistance state（HRS） and low resistance state（LRS） on the temperature and device area are studied.Then,the composition and chemical bonding state of Cu and Hf at Cu/HfO_2 interface region are analyzed by x-ray photoelectron spectroscopy（XPS）.Combining the electrical characteristics and the chemical structure at the interface,a model for the resistive switching effect in Cu/HfO_2/Pt stack is proposed.According to this model,the generation and recovery of oxygen vacancies in the HfO_2 film are responsible for the resistance change.展开更多
基金Project supported by the Research Fund of the State Key Laboratory of Solidification Processing(NWPU),China(Grant No.155-QP-2016)the Fundamental Research Funds for the Central Universities of China(Grant No.3102014JCQ01032)the 111 Project of China(Grant No.B08040)
文摘Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO_2/Pt structure in the application of resistive random access memory（RRAM）.The conduction mechanism of the structure is characterized to be SCLC conduction.The dependence of resistances in both high resistance state（HRS） and low resistance state（LRS） on the temperature and device area are studied.Then,the composition and chemical bonding state of Cu and Hf at Cu/HfO_2 interface region are analyzed by x-ray photoelectron spectroscopy（XPS）.Combining the electrical characteristics and the chemical structure at the interface,a model for the resistive switching effect in Cu/HfO_2/Pt stack is proposed.According to this model,the generation and recovery of oxygen vacancies in the HfO_2 film are responsible for the resistance change.
