Strategies for enhancing conductivity of colloidal nanocrystals and their photoelectronic applications

Semiconductor colloidal nanocrystals(NCs)have size-and shape-dependent optoelectronic properties due to the quantum confinement effect,and are considered to be promising optoelectronic materials.Among them,Ⅱ-Ⅵ(CdSe,CdS,CdTe,etc.)andⅣ-Ⅵ(PbSe,PbTe,PbS,etc.)have been widely studied as representative colloidal NCs.However,the surfactant used in its synthesis progress results in the NCs surface covered by an insulating shell,which greatly affects the exciton separation and carrier transport of colloidal NCs-based photovoltaic devices.Therefore,how to design high-efficiency optoelectronic devices by improving the transport performance of carriers has been a great challenge.The key issues in the research ofⅡ-Ⅵ(CdSe,CdS,CdTe,etc.)andⅣ-Ⅵ(PbSe,PbTe,PbS,etc.)colloidal NCs were summarized,including synthesis strategy,morphology/size adjustment,surface ligand design,improvement of conductivity and their optoelectronic properties.The influence of surface ligands on the stability and dispersion of NCs was firstly introduced,and then strategies of improving electrical conductivity of NCs were discussed,such as ligands exchange,doping,self-assembly and plasmons,which provided a good foundation for the subsequent preparation of optoelectronic devices.The future development direction of NCs optoelectronic devices is expounded from the aspects of materials composition,comprehensive preparation and flexible processing of colloidal NCs.

Modeling and Simulation of Photoelectronic Lambda Bipolar Transistor

Based on the region model of lambda bipolar transistor ( LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ( PLBT) are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simu- lation results are made, which show that the analytical results are in agreement with the observed devices characteristics.

Devices and applications of van der Waals heterostructures

Van der Waals heterostructures,composed of individual two-dimensional material have been developing extremely fast.Synthesis of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device exploitation.We review the approach of synthesis of van der Waals heterostructures,discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device.