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Performance comparison of ghost imaging versus conventional imaging in photon shot noise cases 被引量:3
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作者 Zijie Li Qing Zhao Wenlin Gong 《Chinese Optics Letters》 SCIE EI CAS CSCD 2020年第7期40-44,共5页
The performances of ghost imaging and conventional imaging in photon shot noise cases are investigated. We define an imaging signal-to-noise ratio called SNRtranwhere only the object’s transmission region is used to ... The performances of ghost imaging and conventional imaging in photon shot noise cases are investigated. We define an imaging signal-to-noise ratio called SNRtranwhere only the object’s transmission region is used to evaluate the imaging quality and it can be applied to ghost imaging(GI) with any random pattern. Both the values SNRtran GIof GI and SNRtran CIof conventional imaging in photon shot noise cases are deduced from a simple statistical analysis. The analytical results, which are backed up by numerical simulations, demonstrate that the value SNRtran GIis related to the ratio between the object’s transmission area Aoand the number density of photons illuminating the object plane Io, which is similar to the theoretical results based on the first principle of GI with a Gaussian speckle field deduced by B. I. Erkmen and J. H. Shapiro [in Adv. Opt. Photonics 2, 405–450(2010)]. In addition, we also show that the value SNRtran CIwill be larger than SNRtran GIwhen Ao is beyond a threshold value. 展开更多
关键词 ghost imaging photon shot noise signal-to-noise ratio SPECKLE
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An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor
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作者 李斌桥 于俊庭 +1 位作者 徐江涛 于平平 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第7期53-56,共4页
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well struct... An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor. 展开更多
关键词 pinch-off voltage CMOS image sensor photon shot noise pixel design
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