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Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors 被引量:1
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作者 乔辉 胡伟达 +2 位作者 叶振华 李向阳 龚海梅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期116-118,共3页
The influence of hydrogenation on the dark current mechanism ofHgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reacti... The influence of hydrogenation on the dark current mechanism ofHgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reactive ion etching process. A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas. The fitting results of experimental results at reverse bias conditions sustained that the improvement of current-voltage curves was due to the suppression of trap assisted tunneling current and the enhancement of minority lifetime in the depletion region. It was also found that the dominative forward current was gradually converted from a generation-recombination current to a diffusion current with the enlargement of the hydrogenation area, which was infered from the ideality factors by abstraction of forward resistance-voltage curves of different detectors. 展开更多
关键词 HYDROGENATION PASSIVATION dark current photovoltaic detector HGCDTE
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