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Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors 被引量:1
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作者 乔辉 胡伟达 +2 位作者 叶振华 李向阳 龚海梅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期116-118,共3页
The influence of hydrogenation on the dark current mechanism ofHgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reacti... The influence of hydrogenation on the dark current mechanism ofHgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reactive ion etching process. A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas. The fitting results of experimental results at reverse bias conditions sustained that the improvement of current-voltage curves was due to the suppression of trap assisted tunneling current and the enhancement of minority lifetime in the depletion region. It was also found that the dominative forward current was gradually converted from a generation-recombination current to a diffusion current with the enlargement of the hydrogenation area, which was infered from the ideality factors by abstraction of forward resistance-voltage curves of different detectors. 展开更多
关键词 HYDROGENATION PASSIVATION dark current photovoltaic detector HGCDTE
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Ultrawide-bandgap(6.14 eV)(AlGa))_(2)O_(3)/Ga_(2)O_(3)heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection 被引量:2
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作者 Yuqiang Li Dan Zhang +4 位作者 Lemin Jia Siqi Zhu Yanming Zhu Wei Zheng Feng Huang 《Science China Materials》 SCIE EI CAS CSCD 2021年第12期3027-3036,共10页
One judiciously designed strategy of utilizing an ultrathin but conductive Ga_(2)O_(3):Si nanolayer to prepare(AlGa)_(2)O_(3)crystalline film is demonstrated.Benefiting from the existence of Ga_(2)O_(3):Si nanolayer,a... One judiciously designed strategy of utilizing an ultrathin but conductive Ga_(2)O_(3):Si nanolayer to prepare(AlGa)_(2)O_(3)crystalline film is demonstrated.Benefiting from the existence of Ga_(2)O_(3):Si nanolayer,a high-quality(Al_(0.68)Ga_(0.32))_(2)O_(3)sesquioxide film with 68 at.%aluminum was epitaxially grown on sapphire substrates,which was characterized by high-resolution transmission electron microscopy,X-ray photoelectron spectroscopy and X-ray diffraction.Its bandgap was broadened to 6.14 eV,and a vacuum ultraviolet(VUV)(AlGa)_(2)O_(3)/Ga_(2)O_(3):Si photodetector was subsequently fabricated.The detector exhibits a pretty high on-off ratio of about 10^(3),an open-circuit voltage of 1.0 V and a responsivity of 8.1 mA W^(-1) at 0 V bias voltage.The performances imply that the proposed strategy is valuable for improving the quality and also adjusting the bandgap of(AlGa)_(2)O_(3)sesquioxides,which is expected to facilitate their application in VUV photodetection. 展开更多
关键词 (AlGa)_(2)O_(3) ultrawide bandgap vacuum ultraviolet photovoltaic detector
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