Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Her...Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe_(2)/α-In_(2)Se_(3) ferroelectric p-n junctions.This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization inα-In_(2)Se_(3).Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly.Notably,the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order.Based on this,retina synapse-like vision functions are mimicked.Optoelectronic short-term and long-term plasticity,as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage.Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.展开更多
Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the dir...Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current：it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.展开更多
Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 for the first time. The rise time was about 23 ns and the full width at half maximum was about 125...Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La0.9Sr0.1MnO3 thin film in the p-n junction was irradiated by a laser of ~20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/mJ for a 308 nm laser pulse.展开更多
基金This work was supported by the National Key R&D Program of China(Nos.2018YFA0703700 and 2016YFA0200700)the National Natural Science Foundation of China(Nos.91964203,61625401,61851403,61974036,61804146,and 61804035)+1 种基金the strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000)CAS Key Laboratory of Nanosystem and Hierarchical Fabrication.The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.
文摘Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe_(2)/α-In_(2)Se_(3) ferroelectric p-n junctions.This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization inα-In_(2)Se_(3).Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly.Notably,the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order.Based on this,retina synapse-like vision functions are mimicked.Optoelectronic short-term and long-term plasticity,as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage.Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.
基金Project supported by the National Basic Research Program of China(Grant No.2011CB921801)the National Natural Science Foundation of China(Grant No.111374348)
文摘Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current：it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.
基金supported by the National Natural Science Foundation of China(Grant No.10334070).
文摘Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La0.9Sr0.1MnO3 thin film in the p-n junction was irradiated by a laser of ~20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/mJ for a 308 nm laser pulse.
