Determination of elastic,piezoelectric,and dielectric constants of an R:BaTiO_3 single crystal by Brillouin scattering

From the sound velocity measured using the Brillouin scattering technique, the elastic, piezoelectric, and dielectric constants of a high-quality monodomain tetragonal Rh：BaTiO3 single crystal are determined at room temperature. The elastic constants are in fairly good agreement with those of the BaTiO3 single crystal, measured previously by Brillouin scattering and the low-frequency equivalent circuit methods. However, their electromeehanical properties are significantly different. Based on the sound propagation equations and these results, the directional dependence of the compressional modulus and the shear modulus of Rh：BaTiO3 in the （010） plane is investigated. Some properties of sound propagation and electromechanical coupling in the crystal are discussed.

Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss

The evolution of electronic communication technology raises higher requirements for low dielectric constant(low-k)materials.For this,a benzoxazine functional organosilicon(HP-aptes)with dense Si—O—Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol–gel method.Then,a series of polybenzoxazine composites(PPHP)were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer(P-aptmds)and HP-aptes.The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites,which endowed the composites with enhanced low-k properties.When the content of HP-aptes is 30%(mass),the crosslinking density was 2.05×10^(-3)mol·cm^(-3),while that of PP-aptmds was 3.31×10^(-3)mol·cm^(-3).In addition,the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056,respectively.

Third-order elastic, piezoelectric, and dielectric constants

The definitions of the third-order elastic,piezoelectric,and dielectric constants and the properties of the associated tensors are discussed.Based on the energy conservation and coordinate transformation,the relations among the third-order constants are obtained.Furthermore,the relations among the third-order elastic,piezoelectric,and dielectric constants of the seven crystal systems and isotropic materials are listed in detail.These third-order constants relations play an important role in solving nonlinear problems of elastic and piezoelectric materials.It is further found that all third-order piezoelectric constants are 0 for 15 kinds of point groups,while all third-order dielectric constants are 0 for 16 kinds of point groups as well as isotropic material.The reason is that some of the point groups are centrally symmetric,and the other point groups are high symmetry.These results provide the foundation to measure these constants,to choose material,and to research nonlinear problems.Moreover,these results are helpful not only for the study of nonlinear elastic and piezoelectric problems,but also for the research on flexoelectric effects and size effects.

Fabrication of BaTiO3/Epoxy Composites Exhibiting Large Dielectric Constant, Low Dielectric Loss and High Flexural Strength

BaTiO3/epoxy composites consisting of two three-dimensionally interpenetrating networks of BaTiO3 and epoxy phases were prepared using a new approach. The BaTiO3/epoxy composites exhibit a colossal dielectric constant, low dielectric loss and high flexural strength. In the BaTiO3 networks, chemically bonded grain boundaries between neighboring BaTiO3 grains were established, and they are responsible for the colossal dielectric constant and high flexural strength of the BaTiO3/epoxy composites. Furthermore, unlike the conventional ceramic/polymer composites, this approach also makes high loadings of BaTiO3 contents possible for the BaTiO3/epoxy composites without compromising their high flexural strength.

Impact of Native Defects in the High Dielectric Constant Oxide HfSiO_4 on MOS Device Performance

Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.

Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.

Local Dielectric Constant of the Solvent Shell Surrounding Ethyl Acetoacetate in Cosolvent-Modified Supercritical Carbon Dioxide

The enol contents and equilibrium constants for keto-enol tautomerism of ethyl acetoacetate in supercritical (SC) CO2 with and without cosolvent ethanol and in various liquid solvents were investigated by UV spectroscopy. The local dielectric constant about the solute in SC CO2/ethanol system was obtained through the correlation between Gibbs free energy of tautomerism and Onsager-Kirkwood solvent quantity. The great difference between local dielectric constant and that calculated from homogeneous dielectric medium theory suggests clustering of the cosolvent around the solute.

ACCURATE VARIATIONAL ANALYSIS FOR MEASUREMENT OF COMPLEX DIELECTRIC CONSTANT OF THE SAMPLE ROD INSERTED IN A CAVITY

This paper derives the Lindell formula based on the generalized variational principle.For the complex dielectric constant measurement of a small lossy dielectric rod with Rayleigh-Ritz method, an accurate variational analysis is given. The concept of complex frequency isintroduced in general, and the stability of the solution is discussed. Comparing with the resultof perturbation method, it is concluded that the deviation of perturbation algorithm should betaken into consideration.

Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation： a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation. The effects of charging on the dielectric constant will influence the charging dynamic in return. In this paper, we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation. The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model, respectively. Internal charge drift due to E-field, density gradient caused diffusion, charges trap by material defect, free electron and hole neutralization, and variation in the internal dielectric constant are considered when simulating the transport process. The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation. As a function of material nonlinear susceptibility and primary energy, the dynamics of charging states and dielectric constants are then presented in the charging process. It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time. Material with a larger nonlinear susceptibility corresponds a faster charging enhancement. In addition, the effective dielectric constant and the surface potential have a linear relationship in the charging balance. Nevertheless, with shrinking charging affect range, the situation with a higher energy primary electron comes with less dielectric constant variation. The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

Effective dielectric constant model of electromagnetic backscattering from stratified air–sea surface film–sea water medium

Studies of surface film medium on the sea surface are carried out in this paper for developing the technology to automatically detect and classify sea surface films, and an effective dielectric constant model of electromagnetic backscattering from a stratified air–ocean interface. Numerical results of the new model show the characteristics of effective dielectric constants for the air–sea surface film–sea water medium as follows. The effective dielectric constants decrease with increasing relative dielectric constants of the sea surface films. The effective dielectric constants decrease in horizontal polarization（abbr. HH polarization） and increase in VV vertical polarization（abbr. VV polarization） with increasing radar incident angle. Effective dielectric constants vary with relative sea surface film thickness as a cosinusoidal function of sea surface film thickness. Effective dielectric constant of VV polarization is larger than that of HH polarization. Two potential applications are found with our model, i.e., the retrieval of dielectric constants from the sea surface film, and the film thickness retrieval with our model. Our model has a highly significant influence on improving the technology related to the remote sensing of sea surface films.

Interrelationship Analysis of L-Band Backscattering Intensity and Soil Dielectric Constant for Soil Moisture Retrieval Using PALSAR Data

The purpose of this paper is to study about the interrelationship between the backscattering intensity of PALSAR data and the laboratory measurement of dielectric constant and soil moisture. The characterization of the dielectric constant of arid soils in the 0.3 - 3 GHz frequency range, particularly focused in L-band was analyzed in varied soil moisture content and soil textures. The interrelationship between the relative dielectric constant with soil textures and backscattering of PALSAR data was also analyzed and statistical model was computed. In this study, after collecting the soil samples in the field from top soil (0 - 10 cm) in a homogeneous area then, the dielectric constant was measured using a dielectric probe tool kit. For investigated of the characteristics and behaviors of the dielectric constant and relationship with backscattering a variety of moisture content from 0% to 40% and soil fraction conditions was tested in laboratory condition. All data were analyzed by integrating it with other geophysical data in GIS, such as land cover and soil texture. Thus, the regression model computed between measured soil moisture and backscattering coefficient of PALSR data which were extracted as same point of each soil sample pixel. Finally, after completing the preprocessing, such as removing the speckle noise by averaging, the model was applied to the PALSAR data for retrieving the soil moisture map in arid region of Iran. The analysis of dielectric constant properties result has shown the soil texture after the moisture content has the largest effected on dielectric constant. In addition, the PALSAR data in dual polarization are also able to derive the soil moisture using statistical method. The dielectric constant and backscattering shown have the exponential relationship and the HV polarization mode is more sensitive than the HH mode to soil moisture and overestimated the soil moisture as well. The validation of result has shown the 4.2 Vol-% RMSE of soil moisture. It means that the backscattering analysis should consider about other factors such a surface roughness and mix pixel of vegetation effective.

Determination of Water Colltent in Clayey Red Soil Using Techniques Based on Measurement of Dielectric Constant

Two time-domain reflectometry (TDR) systems and a new impedance measuring instrument, Thetaprobe,which are based on determination of soil dielectric constant, were used to measure water content of clayeyred soil to eraluate the accuracy of these instruments. The results indicated that these instruments shouldbe carefUlly re-calibrated before being applied in clayey red soil. With a new calibration curve fed into one ofthe TDR systems tested, nase system, the measured data compared well with tho8e by standard oven-dryingmethod.

Transmission spectra characteristics of 1D photonic crystals with complex dielectric constant

The characteristics of photonic forbidden bands, transmission gain and absorption of one-dimensional （ID） dual-periodical photonic crystals （PC） with a complex dielectric layer were studied by using the optical transfer matrix （TM） method. The results show that the photonic band gap （PBG） of this structure is enlarged and many transmission resonance peaks appear in PBG. Large transmission gain for transmission peaks is obtained if the imaginary part of dielectric constant is negative. With the increase of the absolute value of the imaginary part, the transmission gain increases firstly and the transmittance gain gets to an apex. The imaginary parts of dielectric constant corresponding to transmission gain apex are different according to wavelength. However, the transmission ratio of resonance peaks is less than 1 if the imagi- nary part of dielectric constant is positive. The properties might be used to design multi-narrow-channel band filters and optical amplification devices synchronously.

Helium Plasma Damage of Low-k Carbon Doped Silica Film:the Effect of Si Dangling Bonds on the Dielectric Constant

The low-k carbon doped silica film has been modified by radio frequency helium plasma at 5 Pa pressure and 80 W power with subsequent XPS, FTIR and optical emission spec- troscopy analysis. XPS data indicate that helium ions have broken Si-C bonds, leading to Si-C scission with C（1s） lost seriously. The Si（2p）, O（ls）, peak obviously shifted to higher binding en- ergies, indicating an increasingly oxidized Si（2p）. FTIR data also show that the silanol formation increased with longer exposure time up to a week. Contrarily, the CHa stretch, Si-C stretching bond and the ratio of the Si-O-Si cage and Si-O-Si network peak sharply decreased upon exposure to helium plasma. The OES result indicates that monovalent helium ions in plasma play a key role in damaging carbon doped silica film. So it can be concluded that the monovalent helium ions besides VUV photons can break the weak Si-C bonds to create Si dangling bonds and free methyl radicals, and the latter easily reacts with O_2 from the atmosphere to generate CO_2 and H_2O. The bonds change is due to the Si dangling bonds combining with H_2O, thereby, increasing the dielectric constant k value.

Error Correction in Permittivity Measurement of High Dielectric Constant Materials Based on Cavity Perturbation Method

The purpose of this paper is to reduce the error when measuring high dielectric constant materials.In this paper,the reason why the error introduced is analyzed firstly.Then,with HFSS,the method of choosing the size of cavity and the dimension of dielectric materials is proposed.And several error correction curves are provided for measuring high dielectric constant materials.Finally,the experiment is conducted to validate the feasibility of our analysis.

Liquid Phase Sintering (LPS) and Dielectric Constant of α-Silicon Nitride Ceramic

The spark plasma sintering （SPS） was applied to prepare α-Si3 N4 ceramics of different densities with magnesia, silicon dioxide, alumina as the sintering aids. The mechanism of liquid phase sintering （LPS） wus discussed and the factors influencing the density of the prepared samples were analyzed. The dielectric constant of sintered samples was tested. The experimental results show that the density can be controlled from 2.48 g/ cm^3 to 3.09 g/ cm^3 while the content of the sintering aids and the sintering temperature alter and the dielectric constant is closely dependent on the density of obtained samples.

Plasma-assisted ammonia synthesis in a packed-bed dielectric barrier discharge reactor:roles of dielectric constant and thermal conductivity of packing materials

In this article,plasma-assisted NH;synthesis directly from N;and H;over packing materials with different dielectric constants(BaTiO_(2),TiO_(2) and SiO_(2))and thermal conductivities(Be O,Al N and Al_(2)O_(2))at room temperature and atmospheric pressure is reported.The higher dielectric constant and thermal conductivity of packing material are found to be the key parameters in enhancing the NH;synthesis performance.The NH;concentration of 1344 ppm is achieved in the presence of BaTiO_(2),which is 106%higher than that of SiO_(2),at the specific input energy(SIE)of 5.4 k J·l^(-1).The presence of materials with higher dielectric constant,i.e.BaTiO_(2) and TiO_(2)in this work,would contribute to the increase of electron energy and energy injected to plasma,which is conductive to the generation of chemically active species by electron-impact reactions.Therefore,the employment of packing materials with higher dielectric constant has proved to be beneficial for NH;synthesis.Compared to that of Al_(2)O_(3),the presence of Be O and Al N yields 31.0%and 16.9%improvement in NH;concentration,respectively,at the SIE of5.4 k J·l^(-1).The results of IR imaging show that the addition of Be O decreases the surface temperature of the packed region by 20.5%to 70.3℃ and results in an extension of entropy increment compared to that of Al_(2)O_(3),at the SIE of 5.4 k J·l^(-1).The results indicate that the presence of materials with higher thermal conductivity is beneficial for NH;synthesis,which has been confirmed by the lower surface temperature and higher entropy increment of the packed region.In addition,when SIE is higher than the optimal value,further increasing SIE would lead to the decrease of energy efficiency,which would be related to the exacerbation in reverse reaction of NH;formation reactions.

Frequency dependence of the electrical conductivity and dielectric constants of polycarbonate (Makrofol-E) film under the effects of γ-radiation

Irradiation effects of γ-radiation on the physical and electrical properties of polycarbonate (Makrofol-E( film has been studied to be able to investigate the dielectric response of irradiated polymers for a wide range of fluence and frequency. The dielectric constant (ε') The loss tangent (tanδ), dielectric loss factor (ε''), the a.c electrical conductivity (σ) and the relaxation time (τ), were measured in the frequency range from (40) Hz to (4) MHz. These samples were irradiated by means of γ-rays from 10 up to 200 KGy. The change in different properties as a function of absorbed dose was studied. Degradation of the polymers leading to amorphisation was observed by increasing the absorbed γ- dose. The induced changes in the electrical conductivity due to γ-rays irradiation of Makrofol-E provide a better method for γ -dose measurements. A semi-empirical equation was developed to use Makrofol-E as a dielectric dosimeter. Furthermore, Makrofol-E has much greater resistance to radiation damage;the attained results suggested strongly the applicability of Makrofol-E to be used in medical products applications.

Study of the behaviour of the dielectric constant in Cu,Fe:BaTiO_3

In this work we study the behaviour of the dielectric constant of BaTiO3 single crystals doped with Cu and Fe for different ion percentages, particularly, the influence of these heterovalent substitutions on the ferroelectric-paraelectric phase transition whose temperature is found at Tc=120 °C for pure samples. The dielectric constant ε in terms of temperature shows that the Curie temperature decreases when the quantity of impurities increases and presents a broadening and flattering of the maxi-mum of ε(T) within higher values, with the transition becoming more and more diffuse. It is interesting to have a material with very high permittivity (high-k) because of its capacity to store an important quantity of electric charges. The ε anisotropy and the Curie-Weiss law are also verified with a good ratio between the slopes of ε-1(T) from both sides of the transition, leading to a Curie constant:C=13×104 K for BaTiO3:1.6%Fe in the polar phase. BaTiO3 is a displacive ferroelectric going through a first-order phase transition. The substitutions have an effect on the dynamics of the perovskite lattice. They induce charges transfer to Ti and a diminution of elastic forces in BaTiO3. Then we discuss the fact that the maximum of permittivity does not depend on the phase transition but on the nature of the material.

High dielectric constant materials and their application to IC gate stack systems

High dielectric constant (high-k) materials are vital to the nanoelectronic devices. The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device structures.