Piezoelectric-enhanced n-TiO_(2)/BaTiO_(3)/p-TiO_(2) heterojunction for highly efficient photoelectrocatalysis

Charge separation is critical for achieving efficient solar-to-hydrogen conversion,whereas piezoelectric-enhanced photoelectrochemical(PEC)systems can effectively modulate band bending and charge migration.Herein,we design an n-TiO_(2)/Ba TiO_(3)/p-TiO_(2)(TBTm)heterojunction in which the piezoelectric Ba TiO_(3) layer is sandwiched between n-TiO_(2)and p-TiO_(2).The built-in electric field of TBTm can provide a strong driving force to accelerate carrier separation and prolong carrier lifetime.Consequently,the TBT3 achieves a prominent photocurrent density,as high as 2.13 m A cm^(-2)at 1.23 V versus reversible hydrogen electrode(RHE),which is 2.4-and 1.5-times higher than TiO_(2) and TiO_(2)–Ba TiO_(3) heterojunction,respectively.Driven by mechanical deformation,the induced dipole polarization can further regulate built-in electric fields,and the piezoelectric photocurrent density of TBT3-800 is 2.84 times higher than TiO_(2) at 1.23 V vs.RHE due to the construction of piezoelectric-heterostructures.This work provides a piezoelectric polarization strategy for modulating the built-in electric field of heterojunction for PEC system.

Remarkably Enhanced Methane Sensing Performance at Room Temperature via Constructing a Self-Assembled Mulberry-Like ZnO/SnO_(2) Hierarchical Structure

Development of metal oxide semiconductors-based methane sensors with good response and low power consumption is one of the major challenges to realize the real-time monitoring of methane leakage.In this work,a self-assembled mulberry-like ZnO/SnO_(2)hierarchical structure is constructed by a two-step hydrothermal method.The resultant sensor works at room temperature with excellent response of~56.1%to 2000 ppm CH_(4)at 55%relative humidity.It is found that the strain induced at the ZnO/SnO_(2)interface greatly enhances the piezoelectric polarization on the ZnO surface and that the band bending results in the accumulation of chemically adsorbed O_(2)^(-)ions close to the interface,leading to significant improvement in the sensing performance of the methane gas sensor at room temperature.

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence bandedge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.

Parameter-Dependent Third-Order Susceptibility of In_xGa_(1-x)N/GaN Parabolic Quantum Dots

The electron states confined in wurtzite InxGa1-xN/GaN strained quantum dots （QDs） have been investigated in the effective -mass approximation by solving the Schrtdinger equation, in which parabolic confined potential and strong built-in electric field effect （due to the piezoelectricity and spontaneous polarization） have been taken into account. The real part Rex^（3）（0,0,ω） and the imaginary part Imx^（3）（0,0,ω） of the third-order susceptibil- ity describe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Furthermore, the study shows Rex^（3）（0,0,ω） and Imx^（3）（0,0,ω） increase under resonant conditions with the QDs＇ radius and height increase, and the same results occur when the content increase. In addition, the resonant position shift to the lower energy region when the parabolic frequencies increase.

SH Waves in(1-x)Pb(Mg_(1/3)Nb_(2/3))O_(3-x)PbTiO_3 Piezoelectric Layered Structures Loaded with Viscous Liquid

The velocity dispersion and attenuation of shear horizontal（SH） waves in a layered piezoelectric structure loaded with viscous liquid is studied,where the（1- x）Pb（Mg（1/3）Nb（2/3））O（3-x）PbTiO3[PMN-xPT]single crystal is chosen as the piezoelectric layer.The PMN-xPT is being polarized along[011]c and[001]c so that the macroscopic symmetries are mm 2 and 4 mm,respectively.For the nonconductive liquid,the electrically open and shorted conditions at the interface between the liquid and the piezoelectric layer are considered.The phase velocity equations are derived analytically.The effects of the electrically boundary condition,the viscous coefficient and mass density of liquid as well as the thickness of the PMN-xPT layer on the phase velocity and attenuation are graphically illustrated.The results show that the phase velocity for the[011]c polarized PMN-0.29 PT is much smaller than that for the[001]c polarized PMN-0.33 PT,and the effects of viscous coefficient and piezoelectric layer thickness on the phase velocity for the[011]c case are stronger than that for the[001]c case.In addition,the electrical boundary conditions have an obvious influence on the propagation behaviors.These results can be useful for the designs and applications of acoustic wave devices and liquid biosensors.