This paper proposed a novel fast fractional pixel search algorithm based on polynomial model. With the analysis of distribution characteristics of motion compensation error surface inside tractional pixel searching wi...This paper proposed a novel fast fractional pixel search algorithm based on polynomial model. With the analysis of distribution characteristics of motion compensation error surface inside tractional pixel searching window, the matching error is fitted with parabola along horizontal and vertical direction respectively. The proposcd searching strategy needs to check only 6 points rather than 16 or 24 points, which are used in the l lierarchical Fractional Pel Search algorithm （HFPS） for 1/4-pel and 1/8-pel Motion Estimation （ME）. The experimental results show that the proposed algorithm shows very good capability in keeping the rate distortion performance while reduces computation load to a large extent compared with HFPS algorithm.展开更多
By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE envir...By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.展开更多
基金Supported by the Doctoral Foundation of Ministry of Education of China (No.20040699015).
文摘This paper proposed a novel fast fractional pixel search algorithm based on polynomial model. With the analysis of distribution characteristics of motion compensation error surface inside tractional pixel searching window, the matching error is fitted with parabola along horizontal and vertical direction respectively. The proposcd searching strategy needs to check only 6 points rather than 16 or 24 points, which are used in the l lierarchical Fractional Pel Search algorithm （HFPS） for 1/4-pel and 1/8-pel Motion Estimation （ME）. The experimental results show that the proposed algorithm shows very good capability in keeping the rate distortion performance while reduces computation load to a large extent compared with HFPS algorithm.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61874085)the Postdoctoral Research Funding Project of Shaanxi Province,China (Grant No. 2018BSHEDZZ41)。
文摘By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.
