Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors

In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.

结合Pixel2style2Pixel的年龄转化方法

年龄转化在刑侦、人脸识别等领域有着重要作用。常见的年龄转化方法需要使用成对带有年龄注释的数据集进行训练,并且存在生成图像质量低、年龄语义信息不够解耦等问题。针对上述问题,在Pix2style2Pix的训练框架中,引入年龄识别、contextual损失函数,对整体损失函数做出符合年龄转化的改进,提取年龄信息并保证图像质量。改进编码网络配合损失函数对潜在空间的图像进行编辑,提出一种基于Pixel2style2Pixel的年龄转化方法。通过FFHQ、CelebA数据集,对所提方法进行验证,实验结果表明,在不采用成对年龄注释的训练集下,改进后的损失函数能生成更符合期望年龄的转化图像,人脸相似度距离为0.346、FID为45.69、SSIM为0.593 6、PSNR为19.64 dB,均优于对比方法,证明所提方法能够生成高质量、年龄语义高度解耦的转化结果。

Development and preliminary results of a large-pixel two-layer LaBr_(3) Compton camera prototype

Lanthanum bromide(LaBr_(3))crystal has a high energy resolution and time resolution and has been used in Compton cameras(CCs)over the past few decades.However,LaBr_(3) crystal arrays are difficult to process because LaBr_(3) is easy to crack and break;thus,few LaBr_(3)-based CC prototypes have been built.In this study,we designed and fabricated a large-pixel LaBr_(3) CC prototype and evaluated its performance with regard to position,energy,and angular resolution.We used two 10×10 LaBr_(3) crystal arrays with a pixel size of 5 mm×5 mm,silicon photomultipliers(SiPMs),and corresponding decoding circuits to construct our prototype.Additionally,a framework based on a Voronoi diagram and a lookup table was developed for list-mode projection data acquisition.Monte Carlo(MC)simulations based on Geant4 and experiments were conducted to evaluate the performance of our CC prototype.The lateral position resolution was 5 mm,and the maximum deviation in the depth direction was 2.5 and 5 mm for the scatterer and absorber,respectively.The corresponding measured energy resolu-tions were 7.65%and 8.44%,respectively,at 511 keV.The experimental results of ^(137)Cs point-like sources were consistent with the MC simulation results with regard to the spatial positions and full widths at half maximum(FWHMs).The angular resolution of the fabricated prototype was approximately 6°when a point-like ^(137)Cs source was centrally placed at a distance of 5 cm from the scatterer.We proposed and investigated a large-pixel LaBr_(3) CC for the first time and verified its feasibility for use in accurate spatial positioning of radiative sources with a high angular resolution.The proposed CC can satisfy the requirements of radiative source imaging and positioning in the nuclear industry and medical applications.

Simulation study of BESⅢwith stitched CMOS pixel detector using AcTs

The reconstruction of the tracks of charged particles with high precision is crucial for HEP experiments to achieve their physics goals.The BESⅢdrift chamber,which is used as the tracking detector of the BESⅢexperiment,has suffered from aging effects resulting in degraded tracking performance after operation for approximately 15 years.To preserve and enhance the tracking performance of BESⅢ,one of the proposals is to add one layer of a thin cylindrical CMOS pixel sensor based on state-of-the-art stitching technology between the beam pipe and the drift chamber.The improvement in the tracking performance of BESⅢwith such an additional pixel detector compared to that with only the existing drift chamber was studied using the modern common tracking software Acts,which provides a set of detector-agnostic and highly performant tracking algorithms that have demonstrated promising performance for a few high-energy physics and nuclear physics experiments.

Design,Analysis,and Optimization of a CMOS Active Pixel Sensor

A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.

Principle and Analysis of Novel Gate-Induced Noise in Pixel MOSFET of CMOS Imagers

A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided.The gate-induced noise of the MOSFET is more notable in the strong reversion region than that in the subthreshold region when the applied gate voltage is low.However,the applied gate voltage being up to 3V,the gate-induced noise is more notable with the ω/ω T increasing when the MOSFET operates in the subthreshold region than that in the strong reversion region.Between the photocurrent I D and the root mean square value of the gated-induced noise,current i 2 d presents the relation of i 2 d∝I D in the saturation region of the strong reversion and approximately i 2 d∝I D in the subthreshold region.A deta iled and rigorous study of the gate-induced noise in the reset MOSFET for the p hotodiode APS and improved photodiode APS are provided.The improvement of logari thmic response APS is analyzed and the simulation results show that the gate-in duced noise can be reduced.

Development of small pixel HgCdTe infrared detectors

After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.

Ground Surface Ruptures and Near-Fault,Large-Scale Displacements Caused by the Wenchuan Ms8.0 Earthquake Derived from Pixel Offset Tracking on Synthetic Aperture Radar Images

The 12 May 2008 Wenchuan Ms8.0 earthquake produced surface displacements along the causative fault, the Yingxiu-Beichuan Fault, which are up to several meters near the fault. Because of the large gradient, satellite synthetic aperture radar （SAR） interferometric data are strongly incoherent; the usual SAR interferometry method does not allow such displacements to be measured. In the present study, we employed another approach, the technique based on pixel offset tracking, to solve this problem. The used image data of six tracks are from the Advanced Land Observing Satellite, Phased Array type L-band Synthetic Aperture Radar （ALOS/PALSAR） dataset of Japan. The results show that the entire surface rupture belt is 238 km long, extending almost linearly in a direction of 42°north-east. It is offset left laterally by a north-west-striking fault at Xiaoyudong, and turns at Gaochuan, where the rupture belt shifts toward the south by 5 km, largely keeping the original trend. In terms of the features of the rupture traces, the rupture belt can be divided into five sections and three types. Among them, the Beichuan-Chaping and Hongkou-Yingxiu sections are relatively complex, with large widths and variable traces along the trend. The Pingtong-Nanba and Qingping-Jingtang sections appear uniform, characterized by straight traces and small widths. West of Yingxiu, the rupture traces are not clear. North of the rupture belt, surface displacements are 2.95 m on average, mostly 2-3.5 m, with 7-9 m the maximum near Beichuan. South of the rupture belt, the average displacement is 1.75 m, dominated by 1-2 m, with 3-4 m at a few sites. In the north, the displacements in the radar line of sight are of subsidence, and in the south, they are uplifted, in accordance with a right-slip motion that moves the northern wall of the fault to the east, and the southern wall to the west, respectively. Along the Guanxian-Jiangyou Fault, there is a uplift zone in the radar line of sight, which is 66 km long, 1.5-6 km wide, and has vertical displacements of approximately 2 m, but no observable rupture traces.

Simulation study of energy resolution with changing pixel size for radon monitor based on Topmetal-Ⅱ^- TPC

In this paper, we study how pixel size influences energy resolution for a proposed pixelated detector—a high sensitivity, low cost, and real-time radon monitor based on a Topmetal-Ⅱ^- time projection chamber(TPC). This monitor was designed to improve spatial resolution for detecting radon alpha particles using Topmetal-Ⅱ^- sensors assembled by a 0.35 lm CMOS integrated circuit process.Owing to concerns that small pixel size might have the side effect of worsening energy resolution due to lower signalto-noise ratio, a Geant4-based simulation was used to investigate the dependence of energy resolution on pixel sizes ranging from 60 to 600 lm. A non-monotonic trend in this region shows the combined effect of pixel size and threshold on pixels, analyzed by introducing an empirical expression. Pixel noise contributes 50 keV full-width at half-maximum energy resolution for 400 lm pixel size at 1–4σ threshold that is comparable to the energy resolution caused by energy fluctuations in the TPC ionization process( ~20 keV). The total energy resolution after combining both factors is estimated to be 54 keV for a pixel size of 400 lm at 1–4σ threshold. The analysis presented in this paper would help choosing suitable pixel size for future pixelated detectors.

Individualized Pixel Synthesis and Characterization of Combinatorial Materials Chips

Conventionally, an experimentally determined phase diagram requires studies of phase formation at a range of temperatures for each composition, which takes years of effort from multiple research groups. Combinatorial materials chip technology, featuring high-throughput synthesis and characterization, is able to determine the phase diagram of an entire composition spread of a binary or ternary system at a single temperature on one materials library, which, though significantly increasing efficiency, still requires many libraries processed at a series of temperatures in order to complete a phase diagram. In this paper, we propose a "one-chip method" to construct a complete phase diagram by individually synthesizing each pixel step by step with a progressive pulse of energy to heat at different temperatures while monitoring the phase evolution on the pixel in situ in real time. Repeating this process pixel by pixel throughout the whole chip allows the entire binary or ternary phase diagram to be mapped on one chip in a single experiment. The feasibility of this methodology is demonstrated in a study of a Ge-Sb-Te ternary alloy system, on which the amorphouscrystalline phase boundary is determined.

Steganography in binary image by checking data-carrying eligibility of boundary pixels

We present a novel scheme for embedding secret data into a binary image without introducing noticeable artifacts. Unlike some block-based methods, the proposed scheme encodes the secret bits directly into boundary pixels by checking each pixel of the cover image in a pseudo-random order for embedding eligibility. A set of rules ensures correct identification of data-carrying pixels in blind extraction. The proposed scheme does not generate isolated dots, and can incorporate various coding methods such as matrix encoding to further improve the embedding performance. It is shown that up to one fourth of the boundary pixels may be used to carry secret data. Experimental results indicate that the method can achieve good visual quality with fairly large data capacity.

Mobility impact on compensation performance of AMOLED pixel circuit using IGZO TFTs

The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A "source-follower" structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout.

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.

Design of CMOS active pixels based on finger-shaped PPD

To improve the full-well capacity and linear dynamic range of CMOS image sensor,a special finger-shaped pinned photodiode(PPD)is designed.In terms of process,the first N-type ion implantation of the PPD N buried layer is extended under the transfer gate,thereby increasing the PPD capacitance.Based on TCAD simulation,the width and spacing of PPD were precisely adjusted.A high full-well capacity pixel design with a pixel size of 6×6μm^2 is realized based on the 0.18μm CMOS process.The simulation results indicate that the pixel with the above structure and process has a depletion depth of 2.8μm and a charge transfer efficiency of 100%.The measurement results of the test chip show that the full-well capacity can reach 68650 e–.Compared with the conventional structure,the proposed PPD structure can effectively improve the full well capacity of the pixel.

Steganalysis of LSB Matching Using Characteristic Function Moment of Pixel Differences

Nowadays,many steganographic tools have been developed,and secret messages can be imperceptibly transmitted through public networks.This paper concentrates on steganalysis against spatial least significant bit(LSB) matching,which is the prototype of many advanced information hiding methods.Many existing algorithms deal with steganalysis problems by using the dependencies between adjacent pixels.From another aspect,this paper calculates the differences among pixel pairs and proves that the histogram of difference values will be smoothed by stego noises.We calculate the difference histogram characteristic function(DHCF) and deduce that the moment of DHCFs(DHCFM) will be diminished after stego bits are hidden in the image.Accordingly,we compute the DHCFMs as the discriminative features.We calibrate the features by decreasing the influence of image content on them and train support vector machine classifiers based on the calibrated features.Experimental results demonstrate that the DHCFMs calculated with nonadjacent pixels are helpful to detect stego messages hidden by LSB matching.

Black Photoresist for Patterning Pixel Define Layer of Organic Light Emitting Diode with Polyimide as Thermal Stabilizer

In order to improve the visibility for outside use of organic light emitting diodes (OLEDs), the polarized film and black matrix pattern have been used in the small and medium sized OLEDs;however, these cause problem of reducing the emission efficiency of OLED. Changing the color of pixel define layer (PDL) from brown to black is an important point for improving the efficiency and visibility of OLEDs. In this work we studied the photoresist material containing black pigment and the photolithographic process for patterning of black PDL on OLEDs. The black PDL patterns made with our synthesized polyimides as thermal stabilizer were found to give high thermal stability over 300°C.

Hi'CT:a pixel sensor-based device for ion tomography

Carbon ions,commonly referred to as particle therapy,have become increasingly popular in the last decade.Accurately predicting the range of ions in tissues is important for the precise delivery of doses in heavy-ion radiotherapy.Range uncertainty is currently the largest contributor to dose uncertainty in normal tissues,leading to the use of safety margins in treatment planning.One potential method is the direct relative stopping measurement(RSP)with ions.Heavy-ion CT(Hi′CT),a compact segmented full digital tomography detector using monolithic active pixel sensors,was designed and evaluated using a 430 MeV/u high-energy carbon ion pencil beam in Geant4.The precise position of the individual carbon ion track can be recorded and reconstructed using a 30μm×30μm small pixel pitch size.Two types of customized image reconstruction algorithms were developed,and their performances were evaluated using three different modules of CAT-PHAN 600-series phantoms.The RSP measurement accuracy of the tracking algorithm for different types of materials in the CTP404 module was less than 1%.In terms of spatial resolution,the tracking algorithm could achieve a 20%modulation transfer function normalization value of CTP528 imaging results at 5 lp/cm,which is significantly better than that of the fast imaging algorithm(3 lp/cm).The density resolution obtained using the tracking algorithm of the customized CTP515 was approximately 10.5%.In conclusion,a compact digital Hi'CT system was designed,and its nominal performance was evaluated in a simulation.The RSP resolution and image quality provide potential feasibility for scanning most parts of an adult body or pediatric patient,particularly for head and neck tumor treatment.

Pixel 2940nm点阵激光联合他克莫司软膏治疗肢端型白癜风的临床观察

目的:观察Pixel 2 940 nm点阵激光联合他克莫司软膏治疗肢端型白癜风的临床效果。方法:选取梅州市第二中医医院2019年5月-2021年5月收治的肢端型白癜风患者62例为研究对象,按照随机数字表法将其分为治疗组和对照组,各31例。对照组予以他克莫司软膏治疗,治疗组予以Pixel 2 940 nm点阵激光联合他克莫司软膏治疗。两组均以12周为1个疗程,共治疗2个疗程。对比两组临床疗效、不良反应发生率和复发率。结果:治疗12、24周后,治疗组总有效率(45.16%、70.97%)均明显高于对照组(19.35%、41.94%)(P<0.05);治疗期间对照组不良反应发生率为12.90%,明显低于治疗组的41.94%(P<0.05);治疗组复发率为4.55%(1/22),低于对照组的61.54%(8/13)(P<0.05)。结论:Pixel 2 940 nm点阵激光联合他克莫司软膏治疗肢端型白癜风虽会增加不良反应,但见效快,临床疗效好,能够显著降低复发率,值得在临床上推广应用。

Multiprocessing and Dataflow Processing Architecture of a Pixel Processor and Its VHDL Simulation Strategy

The design of a pixel processor of a real-time CIG (Computer Image Generation) system is summarized. The system has been brought into use. In order to adopt ASIC (Application-Specific integrated Circuit) technology in the design of the new system, the VHDL (Very high speed integrated circuit Hardware Description Language) is used and a re-design and simulation strategy is planed.