After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military ...After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.展开更多
介绍了一种具有2×2像元合并功能的红外读出电路(10μm中心间距)。该电路兼具高分辨率和高帧频的特点,可以满足远距离搜索和近距离跟踪识别两种应用模式下的需求。像元合并前,读出电路的阵列规格为1280×1024,像元中心距为10μm...介绍了一种具有2×2像元合并功能的红外读出电路(10μm中心间距)。该电路兼具高分辨率和高帧频的特点,可以满足远距离搜索和近距离跟踪识别两种应用模式下的需求。像元合并前,读出电路的阵列规格为1280×1024,像元中心距为10μm,空间分辨率高,可用于近距离跟踪识别模式。像元合并后,阵列规格变为640×512,像元中心距变为20μm,灵敏度高,可用于远距离搜索模式。此外,这种电路采用串口输入控制方式,具有积分后读出(Integrate Then Read,ITR)/积分同时读出(Integrate While Read,IWR)工作模式切换、4/8通道可选、翻转和功耗控制等功能。本电路采用GF 0.18μm工艺进行设计。仿真结果表明,在像元合并后,读出电路可达到的最大帧频变为原来的2倍。展开更多
红外焦平面的数字读出是信息化发展的必然方向,其关键技术是数字读出电路。介绍了数字读出电路的发展现状和主要架构,重点分析了时间噪声和空间噪声的来源和影响,并给出低噪声设计指导。同时对线性度、动态范围和帧频等主要性能进行了讨...红外焦平面的数字读出是信息化发展的必然方向,其关键技术是数字读出电路。介绍了数字读出电路的发展现状和主要架构,重点分析了时间噪声和空间噪声的来源和影响,并给出低噪声设计指导。同时对线性度、动态范围和帧频等主要性能进行了讨论,设计了两款数字读出电路。采用列级ADC数字读出架构设计了640×512数字焦平面探测器读出电路,读出噪声测试结果为150μV,互连中波探测器测试NETD为13 m K。基于数字像元读出架构设计了384×288数字焦平面探测器读出电路,互连长波探测器测试NETD小于4 m K,动态范围超过90 dB,帧频达到1000 Hz。所设计的两款读出电路有效提升了红外焦平面的灵敏度、动态范围和帧频等性能,表明数字读出电路技术对红外探测器性能的提升具有重要作用。展开更多
为实现探测器信号成像要求,研究一种气体电子倍增膜(gas electron multiplier,GEM)探测器的读出方法。采用印刷电路技术,将读出电极盘与场效应管的分立元件组合构成阵列,通过场效应管开关阵列,读出GEM探测器信号,并实现成像。实测表明:...为实现探测器信号成像要求,研究一种气体电子倍增膜(gas electron multiplier,GEM)探测器的读出方法。采用印刷电路技术,将读出电极盘与场效应管的分立元件组合构成阵列,通过场效应管开关阵列,读出GEM探测器信号,并实现成像。实测表明:该方法的动态范围(最大信号与噪声高宽的比值)可达7.3×104,积分非线性小于0.324%,灵敏度为2.55 V/nC,可实现30帧/s的实时成像。该方法具有制作工艺简单、参数可调、成本低等优点,为随后采用厚膜技术及薄膜场效应管技术读出GEM探测器提供了重要的设计依据。展开更多
文摘After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.
文摘介绍了一种具有2×2像元合并功能的红外读出电路(10μm中心间距)。该电路兼具高分辨率和高帧频的特点,可以满足远距离搜索和近距离跟踪识别两种应用模式下的需求。像元合并前,读出电路的阵列规格为1280×1024,像元中心距为10μm,空间分辨率高,可用于近距离跟踪识别模式。像元合并后,阵列规格变为640×512,像元中心距变为20μm,灵敏度高,可用于远距离搜索模式。此外,这种电路采用串口输入控制方式,具有积分后读出(Integrate Then Read,ITR)/积分同时读出(Integrate While Read,IWR)工作模式切换、4/8通道可选、翻转和功耗控制等功能。本电路采用GF 0.18μm工艺进行设计。仿真结果表明,在像元合并后,读出电路可达到的最大帧频变为原来的2倍。
文摘红外焦平面的数字读出是信息化发展的必然方向,其关键技术是数字读出电路。介绍了数字读出电路的发展现状和主要架构,重点分析了时间噪声和空间噪声的来源和影响,并给出低噪声设计指导。同时对线性度、动态范围和帧频等主要性能进行了讨论,设计了两款数字读出电路。采用列级ADC数字读出架构设计了640×512数字焦平面探测器读出电路,读出噪声测试结果为150μV,互连中波探测器测试NETD为13 m K。基于数字像元读出架构设计了384×288数字焦平面探测器读出电路,互连长波探测器测试NETD小于4 m K,动态范围超过90 dB,帧频达到1000 Hz。所设计的两款读出电路有效提升了红外焦平面的灵敏度、动态范围和帧频等性能,表明数字读出电路技术对红外探测器性能的提升具有重要作用。
文摘为实现探测器信号成像要求,研究一种气体电子倍增膜(gas electron multiplier,GEM)探测器的读出方法。采用印刷电路技术,将读出电极盘与场效应管的分立元件组合构成阵列,通过场效应管开关阵列,读出GEM探测器信号,并实现成像。实测表明:该方法的动态范围(最大信号与噪声高宽的比值)可达7.3×104,积分非线性小于0.324%,灵敏度为2.55 V/nC,可实现30帧/s的实时成像。该方法具有制作工艺简单、参数可调、成本低等优点,为随后采用厚膜技术及薄膜场效应管技术读出GEM探测器提供了重要的设计依据。
