GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of s...GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations： cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm^2 is obtained. And the charavteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the A1GaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.展开更多
This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(F...This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.展开更多
A novel hybrid structure with high responsivity and efficiency is proposed based on an L-shaped frame nano-antenna(LSFNA)array for solar energy harvesting application.So,two types of LSFNAs are designed and optimized ...A novel hybrid structure with high responsivity and efficiency is proposed based on an L-shaped frame nano-antenna(LSFNA)array for solar energy harvesting application.So,two types of LSFNAs are designed and optimized to enhance the harvesting characteristics of traditional simple electric dipole nano-antenna(SEDNA).The LSFNA geometrical dimensions are optimized to have the best values for the required input impedance at three resonance wavelengths ofλ_(res)=10μm,15μm,and 20μm.Then the LSFNAs with three different sizes are modeled like a planar spiral-shaped array(PSSA).Also,a fractal bowtie nano-antenna is connected with the PSSA in the array gap.This proposed hybrid structure consists of two main elements:(I)Three different sizes of the LSFNAs with two different material types are designed based on the thin-film metal-insulator-metal diodes that are a proper method for infrared energy harvesting.(Ⅱ)The PSSA gap is designed based on the electron field emission proposed by the Fowler-Nordheim theory for the array rectification.Finally,the proposed device is analyzed.The results show that the PSSA not only has an averaged 3-time enhancement in the harvesting characteristics(such as return loss,harvesting efficiency,etc.)than the previously proposed structures but also is a multi-resonance wide-band device.Furthermore,the proposed antenna takes up less space in the electronic circuit and has an easy implementation process.展开更多
The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in t...The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior.展开更多
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024)the Fundamental Research Funds for Central University of China (Grant No. XDJK2009C020)
文摘GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations： cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm^2 is obtained. And the charavteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the A1GaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.
基金the I-Shou University,Taiwan,for financially supporting this research under Contract No.ISU99-01-06Taiwan Science Council under Contract No.NSC98-2218-E-214-001 and 98-2221-E-214-003-MY3
文摘This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.
文摘A novel hybrid structure with high responsivity and efficiency is proposed based on an L-shaped frame nano-antenna(LSFNA)array for solar energy harvesting application.So,two types of LSFNAs are designed and optimized to enhance the harvesting characteristics of traditional simple electric dipole nano-antenna(SEDNA).The LSFNA geometrical dimensions are optimized to have the best values for the required input impedance at three resonance wavelengths ofλ_(res)=10μm,15μm,and 20μm.Then the LSFNAs with three different sizes are modeled like a planar spiral-shaped array(PSSA).Also,a fractal bowtie nano-antenna is connected with the PSSA in the array gap.This proposed hybrid structure consists of two main elements:(I)Three different sizes of the LSFNAs with two different material types are designed based on the thin-film metal-insulator-metal diodes that are a proper method for infrared energy harvesting.(Ⅱ)The PSSA gap is designed based on the electron field emission proposed by the Fowler-Nordheim theory for the array rectification.Finally,the proposed device is analyzed.The results show that the PSSA not only has an averaged 3-time enhancement in the harvesting characteristics(such as return loss,harvesting efficiency,etc.)than the previously proposed structures but also is a multi-resonance wide-band device.Furthermore,the proposed antenna takes up less space in the electronic circuit and has an easy implementation process.
基金supported by the National Natural Science Foundation of China(No.11074280)the Natural Science Foundation of Jiangsu Province,China(No.BK2012110)+3 种基金the Fundamental Research Funds for the Central Universities of China(No.JUSRP51323B)the Chinese Postdoctoral Science Foundation(No.2013M540437)the State Key Laboratory of ASIC and System(No.11KF003)the PAPD of Jiangsu Higher Education Institutions and the Summit of the Six Top Talents Program of Jiangsu Province(No.DZXX-053)
文摘The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior.
