Modeling and Optimal Design of Planar Linkage Mechanism of Coupled Joint Clearances for Manufacturing

The uncertainty of the mechanism motion error is mostly caused by the manufacturing process,so the motion error cannot be effectively predicted at the design phase.The problems of manufacturing complexity and the relationship between design and manufacturing are analyzed,and the influence of dimensional tolerance and fit tolerance on the motion accuracy of the system is considered in the design process.Then based on the Monte Carlo simulation,an optimal design model of planar linkage mechanism is set up.A typical offset slider-crank mechanism is used as an illustrative example to carry out the optimal design.Compared with the result of typical robustness design,the similar variation characteristics of the mean value and the standard deviation can be found,so the proposed method is effective.The method is furthermore applied in the optimization of the schemes with different fit tolerances and the prediction of motion errors in the design phase is achieved.A set of quantitative evaluation system for mechanism optimal design is provided.Finally,a basic strategy is presented to balance the motion precision and manufacturing cost.

Dynamics Response and Non⁃linear Characteristics Analysis of Complex Planar 2⁃DOF Mechanism with Revolute Clearances

There are clearances in mechanism because of manufacture and assembly error,which reduces operation life and working accuracy of mechanism and has a great impact on dynamical responses.At the moment,research in this area mainly focuses on single degree⁃of⁃freedom mechanism considering one clearance,while research of multi⁃DOF mechanism considering multi⁃clearance is less.With the purpose of studying the dynamical characteristics of complex multi⁃DOF mechanism with multi⁃clearances,a dynamic model was developed.The dynamic responses of 2⁃DOF mechanism with two clearances under different positions,values,and numbers of clearance were analyzed.The displacement,velocity,acceleration,collision force,and the axis trajectory at clearance were then given.In addition,there is a limited amount of literature on chaotic phenomena,which mainly focuses on the chaotic phenomena of end⁃effector of mechanism.But in this paper,the non⁃linear characteristics were analyzed by chaotic phenomenon of clearance joint,then chaotic phenomenon was identified by Poincarémappings and phase diagrams.Bifurcation diagrams were given.The results will offer a reliable technical support for the study of dynamical responses of planar mechanisms and the analysis of chaotic phenomena.

Mechanism of amorphous Ge_2Sb_2Te_5 removal during chemical mechanical planarization in acidic H_2O_2 slurry

In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.

A Method for Automatically Establishing a Mathematical Model of Kinematic Analysis to a Planar Mechanism with a Multiple Joint and Prismatic Pair

A method for automatically establishing a mathematical model of kinematic analysis to a planar mechanism with multiple joint and prismatic pair is presented. The breadth （ or depth ） first search spanning tree can be obtained based on an adjacency matrix of the mechanism. Then the kinematic chain （or mechanism）＇s basic loops can be obtained. On the basis of these basic loops, a mathematical model of kinematic analysis can be established and solved automatically. In the sense of a calculative mechanism, structural analysis of the kinematic chain relates to the kinematic analysis of a mechanism. Thus, an effective way is supplied to the given mechanism＇s kinematic analysis for automatic modeling and solving, and a method is supplied to the structural type to optimize kinematic synthesis.

VELOCITY ANALYSIS OF A PLANAR MECHANISM USING A METHOD FROM STATICS

A new method for solving the velocity analysis of a mechanism is presented. Central to the method is how to convert the probem of velocity analysis of a mechanism to one of static analysis. Application of the method to certain practical problems has advantages compared to conventional methods for both graphical and analytical solutions. For brevity an example of a planar mechanism only is presented.

Numerical Simulation of PMM Tests for A Ship in Close Proximity to Sidewall and Maneuvering Stability Analysis

As the maneuverability of a ship navigating close to a bank is influenced by the sidewall, the assessment of ship maneuvering stability is important. The hydrodynamic derivatives measured by the planar motion mechanism （PMM） test provide a way to predict the change of ship maneuverability. This paper presents a numerical simulation of PMM model tests with variant distances to a vertical bank by using unsteady RANS equations. A hybrid dynamic mesh technique is developed to realize the mesh configuration and remeshing of dynamic PMM tests when the ship is close to the bank. The proposed method is validated by comparing numerical results with results of PMM tests in a circulating water channel. The first-order hydrodynamic derivatives of the ship are analyzed from the time history of lateral force and yaw moment according to the multiple-run simulating procedure and the variations of hydrodynamic derivatives with the ship-sidewall distance are given. The straight line stability and directional stability are also discussed and stable or unstable zone of proportional-derivative （PD） controller parameters for directional stability is shown, which can be a reference for course keeping operation when sailing near a bank.

The Analysis of Link Mechanism and Its Programming Realization

This paper introduces realization method of kinematics analysis for the planar four bar mechanism based on the MFC. A mathematicat model is established by a simple and effective method, using the computer simulation technology can the dynamic demonstration mechanism taotion and automatic drawing trajectory curve of arbitrary point on the connecting rod, and can output various motion displacement, speed and acceleration diagram. The paper provides a simple way for motion analysis of planar four link.

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Chemical mechanical planarization(CMP)has become one of the most critical processes in semiconductor device fabrication to achieve global planarization.To achieve an efficient global planarization for device node dimensions of less than 32 nm,a comprehensive understanding of the physical,chemical,and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential.During the CMP process,some issues such as film delamination,scratching,dishing,erosion,and corrosion can generate defects which can adversely affect the yield and reliability.In this article,an overview of material removal mechanism of CMP process,investigation of the scratch formation behavior based on polishing process conditions and consumables,scratch formation mechanism and the scratch inspection tools were extensively reviewed.The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed.The current research trends in the scratch formation,based on modeling perspective were also discussed.

Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics

The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.

Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad

Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.

Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(1122) aluminum nitride surface

An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR） and surface quality（RMS roughness） have been studied. The effect of polishing pressure on the AFCMP of the（1122） Al N surface has been compared with that of the（1122） Al Ga N surface. The maximum MRR has been found to be 562 nm/h for the semi-polar（1122） Al N surface, under the experimental conditions of 38 k Pa pressure,90 rpm platen velocity, 30 rpm carrier velocity, slurry p H 3 and 0.4 M oxidizer concentration. The best root mean square（RMS） surface roughness of 1.2 nm and 0.7 nm, over a large scanning area of 0.70×0.96 mm^2, has been achieved on AFCMP processed semi-polar（1122） AlN and（AlGaN） surfaces using optimized slurry chemistry and processing parameters.

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

Chemical mechanical polishing: Theory and experiment

For several decades,chemical mechanical polishing(CMP)has been the most widely used planarization method in integrated circuits manufacturing.The final polishing results are affected by many factors related to the carrier structure,the polishing pad,the slurry,and the process parameters.As both chemical and mechanical actions affect the effectiveness of CMP,and these actions are themselves affected by many factors,the CMP mechanism is complex and has been a hot research area for many years.This review provides a basic description of the development,challenges,and key technologies associated with CMP.We summarize theoretical CMP models from the perspectives of kinematics,empirical,its mechanism(from the viewpoint of the atomic scale,particle scale,and wafer scale),and its chemical-mechanical synergy.Experimental approaches to the CMP mechanism of material removal and planarization are further discussed from the viewpoint of the particle wear effect,chemical-mechanical synergy,and wafer-pad interfacial interaction.

NUMERICAL PREDICTION OF SUBMARINE HYDRODYNAMIC COEFFI-CIENTS USING CFD SIMULATION

The submarine Hydrodynamic coefficients are predicted by numerical simulations. Steady and unsteady Reynolds Averaged Navier-Stokes （RANS） simulations are carried out to numerically simulate the oblique towing experiment and the Planar Motion Mechanism （PMM） experiment performed on the SUBOFF submarine model. The dynamic mesh method is adopted to simulate the maneuvering motions of pure heaving, pure swaying, pure pitching and pure yawing. The hydrodynamic forces and moments acting on the maneuvering submarine are obtained. Consequently, by analyzing these results, the hydrodynamic coefficients of the submarine maneuvering motions can be determined. The computational results are verified by comparison with experimental data, which show that this method can be used to estimate the hydrodynamic derivatives of a fully appended submarine.

Effect of copper slurry on polishing characteristics

The composition of the polishing solution is optimized by investigating the impact of the WIWNU （the so-called within-wafer-non-uniformity WIWNU） and the removal rate （RR） on the polishing characteristics of copper, The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0,065. The surface roughness measured by AFM after CMP （chemical mechanical planarization） is 0.22 nm.

OBLIQUE TOWING TEST AND MANEUVER SIMULATION AT LOW SPEED AND LARGE DRIFT ANGLE FOR DEEP SEA OPEN-FRAMED REMOTELY OPERATED VEHICLE

This article presents the newly designed oblique towing test in the horizontal plane for the scaled model of 4 500 m deep sea open-framed Remotely Operated Vehicle （ROV）,which is being researched and developed by Shanghai Jiao Tong University.Accurate hydrodynamics coefficients measurement is significant for the maneuverability and control system design.The scaled model of ROV was constructed by 1：1.6.Hydrodynamics tests of large drift angle were conducted through Large Amplitude Horizontal Planar Motion Mechanism （LAHPMM） under low speed.Multiple regression method is adopted to process the test data and obtain the related hydrodynamic coefficients.Simulations were designed for the horizontal plane motion of large drift angle to verify the coefficients calculated.And the results show that the data can satisfy with the design requirements of the ROV developed.

The optimization of FA/O barrier slurry with respect to removal rate selectivity on patterned Cu wafers

Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.