Specimens of Ti6A14V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning...Specimens of Ti6A14V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning Electron Mi- croscopy (SEM), and Glancing angle X-ray Diffraction. (XRD) were utilized to evaluate the surface property improvements. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100 to 6000℃. Higher surface hardness and wear resistance were also obtained in the high tempera-ture implantation. The XRD image showed the presence of nitrides of titanium at the implanted surface.展开更多
A two-dimensional particle-in-cell simulation is used to study the time-dependent evolution of the sheath surrounding a prolate spheroid target during a high voltage pulse in plasma source ion implantation. Our study ...A two-dimensional particle-in-cell simulation is used to study the time-dependent evolution of the sheath surrounding a prolate spheroid target during a high voltage pulse in plasma source ion implantation. Our study shows that the potential contour lines pack more closely in the plasma sheath near the vertex of the major axis, i.e. where a thinner sheath is formed, and a non-uniform total ion dose distribution is incident along the surface of the prolate spheroid target due to the focusing of ions by the potential structure. Ion focusing takes place not only at the vertex of the major axis, where dense potential contour lines exist, but also at the vertex of the minor axis, where sparse contour lines exist. This results in two peaks of the received ion dose, locating at the vertices of the major and minor axes of the prolate spheroid target, and an ion dose valley, staying always between the vertices, rather than at the vertex of the minor axis.展开更多
Plasma immersion ion implantation （PI） overcomes the direct exposure limit of traditional beam- line ion implantation, and is suitable for the treatment of complex work-piece with large size. Pm technology is often ...Plasma immersion ion implantation （PI） overcomes the direct exposure limit of traditional beam- line ion implantation, and is suitable for the treatment of complex work-piece with large size. Pm technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PHI device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m3, and maximum vacuum degree is about 5 x10-4 Pa. The density of RF plasma in homogeneous region is about 109 cm-3, and plasma density in the ion implantation region is about 101x cm-3. This device can be used for large-size sample material PHI treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.展开更多
The results of experimental study of nanoscale intermetallic formation in surface layer of a metal target at ion implantation are presented. To increase the thickness of the ion implanted surface layer the high intens...The results of experimental study of nanoscale intermetallic formation in surface layer of a metal target at ion implantation are presented. To increase the thickness of the ion implanted surface layer the high intensive ion implantation is used. Compared with the ordinary ion implantation, the high intensive ion implantation allows a much thicker modified surface layer. Pure polycrystalline nickel was chosen as a target. Nickel samples were irradiated with Al ions on the vacuum-arc ion beam and plasma flow source 'Raduga-5'. It was shown that at the high intensity ion implantation the fine dispersed particles of Ni3AI, NiAl intermetallic compounds and solid solution Al in Ni are formed in the nickel surface layer of 200 nm and thicker. The formation of phases takes place in complete correspondence with the Ni-AI phase diagram.展开更多
Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-eff...Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excellent ion implantation in combination with low temperature plasma technology. In PSII, the target specimen to be implanted is placed directly in a plasma source and then pulse-biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target from all sides. Generally, PSII offers a number of advantages relative to current展开更多
Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main p...Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is dis-cussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some cal-culated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Fi-nally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.展开更多
Ion implantation, as currently practiced, has been shown to be quite effective in production of semiconductor and integrated circuit as well as surface modification of metal. But it is a line-of-sight process and if t...Ion implantation, as currently practiced, has been shown to be quite effective in production of semiconductor and integrated circuit as well as surface modification of metal. But it is a line-of-sight process and if the target is non-planar, target manipulation, such as translation or rotation, is required to implant all sides of the target. Even with sophisticated target manipulation system, the performance of beam-line implantor is still limited by the retained dose problem,, i.e. the maximum dose retained by the target is governed by the angle of incidence of the beam. In order to achieve reasonable dose uniformity on targets with curved surfaces, target masking may be employed to restrict the ion beam angle of incidence. Even though the target has sufficient symmetry to accommodate masking, the masking degrades the system performance, and furthermore, sputtering of the masking contaminates the target.展开更多
基金Supported by the Defense Science Foundation (No.98JS50.3.3 HZ5801)
文摘Specimens of Ti6A14V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning Electron Mi- croscopy (SEM), and Glancing angle X-ray Diffraction. (XRD) were utilized to evaluate the surface property improvements. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100 to 6000℃. Higher surface hardness and wear resistance were also obtained in the high tempera-ture implantation. The XRD image showed the presence of nitrides of titanium at the implanted surface.
基金Project supported by the Program for Innovative Research Team of High Education in Liaoning Province,China (Grant No.2009T055)
文摘A two-dimensional particle-in-cell simulation is used to study the time-dependent evolution of the sheath surrounding a prolate spheroid target during a high voltage pulse in plasma source ion implantation. Our study shows that the potential contour lines pack more closely in the plasma sheath near the vertex of the major axis, i.e. where a thinner sheath is formed, and a non-uniform total ion dose distribution is incident along the surface of the prolate spheroid target due to the focusing of ions by the potential structure. Ion focusing takes place not only at the vertex of the major axis, where dense potential contour lines exist, but also at the vertex of the minor axis, where sparse contour lines exist. This results in two peaks of the received ion dose, locating at the vertices of the major and minor axes of the prolate spheroid target, and an ion dose valley, staying always between the vertices, rather than at the vertex of the minor axis.
文摘Plasma immersion ion implantation （PI） overcomes the direct exposure limit of traditional beam- line ion implantation, and is suitable for the treatment of complex work-piece with large size. Pm technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PHI device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m3, and maximum vacuum degree is about 5 x10-4 Pa. The density of RF plasma in homogeneous region is about 109 cm-3, and plasma density in the ion implantation region is about 101x cm-3. This device can be used for large-size sample material PHI treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.
文摘The results of experimental study of nanoscale intermetallic formation in surface layer of a metal target at ion implantation are presented. To increase the thickness of the ion implanted surface layer the high intensive ion implantation is used. Compared with the ordinary ion implantation, the high intensive ion implantation allows a much thicker modified surface layer. Pure polycrystalline nickel was chosen as a target. Nickel samples were irradiated with Al ions on the vacuum-arc ion beam and plasma flow source 'Raduga-5'. It was shown that at the high intensity ion implantation the fine dispersed particles of Ni3AI, NiAl intermetallic compounds and solid solution Al in Ni are formed in the nickel surface layer of 200 nm and thicker. The formation of phases takes place in complete correspondence with the Ni-AI phase diagram.
基金Project supported by the National Natural Science Foundation of China.
文摘Current ion implantation and low temperature plasma technique have been shown to be quite effective in modifying the surface properties of materials.Plasma source ion implantation (PSII), a new innovative and cost-effective process developed for surface modification of materials, represents an excellent ion implantation in combination with low temperature plasma technology. In PSII, the target specimen to be implanted is placed directly in a plasma source and then pulse-biased to a high negative potential. A plasma sheath forms around the target and ions bombard the entire target from all sides. Generally, PSII offers a number of advantages relative to current
文摘Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is dis-cussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some cal-culated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Fi-nally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.
基金Project supported by the National Natural Science Foundation of China
文摘Ion implantation, as currently practiced, has been shown to be quite effective in production of semiconductor and integrated circuit as well as surface modification of metal. But it is a line-of-sight process and if the target is non-planar, target manipulation, such as translation or rotation, is required to implant all sides of the target. Even with sophisticated target manipulation system, the performance of beam-line implantor is still limited by the retained dose problem,, i.e. the maximum dose retained by the target is governed by the angle of incidence of the beam. In order to achieve reasonable dose uniformity on targets with curved surfaces, target masking may be employed to restrict the ion beam angle of incidence. Even though the target has sufficient symmetry to accommodate masking, the masking degrades the system performance, and furthermore, sputtering of the masking contaminates the target.
