Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integra...Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.展开更多
Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the indi...Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.展开更多
The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of whic...The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of which is microelectronics. Connected objects involve many technological components and functions that are directly dependent of the microelectronics capabilities. If the perspectives are exciting, several challenges are appearing. The first is related to the energy consumption of all these objects, which will become enormous by 2030, and unrealistic by 2040. The second is human resources concern. The future engineers and PhD will have many obstacles to overcome. A way to face these challenges is to involve more and more new thin film technologies that must be combined with VLSI ones, and to better train students to this domain with enough know-how and with a large spectrum of knowledge suitable for multidisciplinary applications. The French national network for Higher Education in microelectronics has adopted this strategy. After presentation of the challenges, this paper deals with the innovative activities of the French network focused on thin film technologies, in order to face the challenges in a short future.展开更多
<div style="text-align:justify;"> The number of connected objects and therefore of IoT devices that invade our daily lives is growing exponentially. These objects are based on electronics in the form o...<div style="text-align:justify;"> The number of connected objects and therefore of IoT devices that invade our daily lives is growing exponentially. These objects are based on electronics in the form of elementary components, circuits and hybrid and complex integrated systems. Electronics must therefore respond to an exponential growth in the number of circuits, components per circuit, data transmitted, stored and processed in data centers. As a corollary, the energy consumed by operators, servers and users follows the same law of growth. In the coming years, the main challenges will be to slow down these exponential growths by improving the design and architecture of components, circuits and systems for processing and transmitting information. These challenges require the acquisition of skills based on knowledge and know-how and an increase in the pool of future competent and innovative players. This approach is part of the strategy led by the national academic training network which, by pooling the skills of trainers and technological platforms at the French level, aims to meet the needs of companies within the framework of a Recovery Plan for the Electronic Sector. After a presentation of the context and the consequences on the technical challenges, and after several approaches proposed, the actions carried out by the national network of microelectronics are detailed and illustrated with several examples of realizations and results. </div>展开更多
The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode an...The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homo- geneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission （LE） intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Dif- ferent instantaneous conductivity ~t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.展开更多
文摘Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.
文摘Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.
文摘The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of which is microelectronics. Connected objects involve many technological components and functions that are directly dependent of the microelectronics capabilities. If the perspectives are exciting, several challenges are appearing. The first is related to the energy consumption of all these objects, which will become enormous by 2030, and unrealistic by 2040. The second is human resources concern. The future engineers and PhD will have many obstacles to overcome. A way to face these challenges is to involve more and more new thin film technologies that must be combined with VLSI ones, and to better train students to this domain with enough know-how and with a large spectrum of knowledge suitable for multidisciplinary applications. The French national network for Higher Education in microelectronics has adopted this strategy. After presentation of the challenges, this paper deals with the innovative activities of the French network focused on thin film technologies, in order to face the challenges in a short future.
文摘<div style="text-align:justify;"> The number of connected objects and therefore of IoT devices that invade our daily lives is growing exponentially. These objects are based on electronics in the form of elementary components, circuits and hybrid and complex integrated systems. Electronics must therefore respond to an exponential growth in the number of circuits, components per circuit, data transmitted, stored and processed in data centers. As a corollary, the energy consumed by operators, servers and users follows the same law of growth. In the coming years, the main challenges will be to slow down these exponential growths by improving the design and architecture of components, circuits and systems for processing and transmitting information. These challenges require the acquisition of skills based on knowledge and know-how and an increase in the pool of future competent and innovative players. This approach is part of the strategy led by the national academic training network which, by pooling the skills of trainers and technological platforms at the French level, aims to meet the needs of companies within the framework of a Recovery Plan for the Electronic Sector. After a presentation of the context and the consequences on the technical challenges, and after several approaches proposed, the actions carried out by the national network of microelectronics are detailed and illustrated with several examples of realizations and results. </div>
基金Project supported by Gazi University BAP Research Project, Turkey （Grant Nos. 05/2012-47 and 05/2012-72）.
文摘The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homo- geneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission （LE） intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Dif- ferent instantaneous conductivity ~t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.
