The South China Sea(SCS)has attracted intensive structural and geophysical research over the past decades,with a focus on its extensional history and relevant dynamic tectonic models.Seismic tomographic images obtained
SKS and SKKS waveforms from 16 events occurring between 2003 and 2005 in the Tonga Trench that were recorded by the BOLIVAR array are analyzed to determine the structure of the D＂ layer beneath the Galapagos Islands....SKS and SKKS waveforms from 16 events occurring between 2003 and 2005 in the Tonga Trench that were recorded by the BOLIVAR array are analyzed to determine the structure of the D＂ layer beneath the Galapagos Islands. 248 differential travel-time residuals of SKKS-SKS are measured and reveal a region of positive residuals of differential travel times in the northeast portion of the sampled region. Analyzing correlation statistics between the measured SKKS-SKS residuals and the observed absolute travel time delay of the individual SKS and SKKS phases for two events with high data quality, we determine that the residual differential travel time is due to excess low velocity along the SKKS raypaths. First order modeling of three potential low velocity structures, ultra-low velocity zones （ULVZ）, plume conduit, D＂ structure, indicates that the observed SKKS-SKS residuals can be best explained by a low velocity anomaly within the D＂ layer. To determine the presence of lower mantle anisotropy, amplitude ratios of the radial and transverse component of SKS and SKKS waveform are calculated and compared. Regions with significant presence of seismic anisotropy are interpreted as the edge of the flow field associated with a hypothetical mantle upwelling.展开更多
In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume imag...In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume images produced by each laser shot were captured through a computer controlled image capturing system and analyzed with image-J software. The integrated optical emission intensity of both samples showed an increasing trend with increasing pulses. Agion deposited silicon showed higher optical emission intensity as compared to Pt-ion deposited silicon, suggesting that more damage occurred to the silicon by Ag ions, which was confirmed by SRIM/TRIM simulations. The surface morphologies of both samples were examined by optical microscope showing thermal, exfoliational and hydrodynamical sputtering processes along with the re-deposition of the material, debris and heat affected zones＇ formation. The crater of Ption deposited silicon was deeper but had less lateral damage than Agion deposited silicon. The novel results clearly indicated that the ion deposited silicon surface produced incubation centers, which led to more absorption of incident light resulting into a higher emission intensity from the plasma plume and deeper crater formation as compared to pure silicon. The approach can be effectively utilized in the laser induced breakdown spectroscopy technique, which endures poor limits of detection.展开更多
基金supported by funds from the Graduate School of Peking University
文摘The South China Sea(SCS)has attracted intensive structural and geophysical research over the past decades,with a focus on its extensional history and relevant dynamic tectonic models.Seismic tomographic images obtained
文摘SKS and SKKS waveforms from 16 events occurring between 2003 and 2005 in the Tonga Trench that were recorded by the BOLIVAR array are analyzed to determine the structure of the D＂ layer beneath the Galapagos Islands. 248 differential travel-time residuals of SKKS-SKS are measured and reveal a region of positive residuals of differential travel times in the northeast portion of the sampled region. Analyzing correlation statistics between the measured SKKS-SKS residuals and the observed absolute travel time delay of the individual SKS and SKKS phases for two events with high data quality, we determine that the residual differential travel time is due to excess low velocity along the SKKS raypaths. First order modeling of three potential low velocity structures, ultra-low velocity zones （ULVZ）, plume conduit, D＂ structure, indicates that the observed SKKS-SKS residuals can be best explained by a low velocity anomaly within the D＂ layer. To determine the presence of lower mantle anisotropy, amplitude ratios of the radial and transverse component of SKS and SKKS waveform are calculated and compared. Regions with significant presence of seismic anisotropy are interpreted as the edge of the flow field associated with a hypothetical mantle upwelling.
文摘In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume images produced by each laser shot were captured through a computer controlled image capturing system and analyzed with image-J software. The integrated optical emission intensity of both samples showed an increasing trend with increasing pulses. Agion deposited silicon showed higher optical emission intensity as compared to Pt-ion deposited silicon, suggesting that more damage occurred to the silicon by Ag ions, which was confirmed by SRIM/TRIM simulations. The surface morphologies of both samples were examined by optical microscope showing thermal, exfoliational and hydrodynamical sputtering processes along with the re-deposition of the material, debris and heat affected zones＇ formation. The crater of Ption deposited silicon was deeper but had less lateral damage than Agion deposited silicon. The novel results clearly indicated that the ion deposited silicon surface produced incubation centers, which led to more absorption of incident light resulting into a higher emission intensity from the plasma plume and deeper crater formation as compared to pure silicon. The approach can be effectively utilized in the laser induced breakdown spectroscopy technique, which endures poor limits of detection.
